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PLANAR TRANSISTOR. GMBT5551 Datasheet

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PLANAR TRANSISTOR. GMBT5551 Datasheet






GMBT5551 TRANSISTOR. Datasheet pdf. Equivalent




GMBT5551 TRANSISTOR. Datasheet pdf. Equivalent





Part

GMBT5551

Description

NPN EPITAXIAL PLANAR TRANSISTOR



Feature


GM BT5551 Description 1/2 NP N E PITAXI AL P L ANAR T RANS ISTO R The GMBT555 1 is designed for general purpose appli cations requiring high breakdown voltag es. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0 .55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 10 0 A.
Manufacture

GTM

Datasheet
Download GMBT5551 Datasheet


GTM GMBT5551

GMBT5551; bsolute Maximum Ratings Parameter www.Da taSheet4U.com Symbol Tj Tstg VCBO VCES VEBO IC PD Ratings +150 -55 ~ +150 18 0 160 6.0 600 225 Unit Junction Tempe rature Storage Temperature Collector to Base Voltage Collector to Emitter Volt age Emitter to Base Voltage Collector C urrent Total Power Dissipation V V V m A mW Characteristics Symbol BVCBO BVCE O BVEBO ICBO IEBO .


GTM GMBT5551

VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT Cob at Ta = 25 Min. 180 160 6 80 80 30 100 Typ. Max. 50 50 150 200 1 1 250 300 6 MHz pF Unit V V V nA nA mV mV V V IC=100uA IC=1mA IE=10u A VCB=120V VEB=4V IC=10mA, IB=1mA IC=50 mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB= 5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE= 5V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, f=1MHz Te.


GTM GMBT5551

st Conditions 2/2 Characteristics Curv e Important Notice: All rights are res erved. Reproduction in whole or in part is prohibited without the prior writte n approval of GTM. GTM reserves the rig ht to make changes to its products with out notice. GTM semiconductor products are not warranted to be suitable for us e in life-support Applications, or syst ems. GTM assumes n.

Part

GMBT5551

Description

NPN EPITAXIAL PLANAR TRANSISTOR



Feature


GM BT5551 Description 1/2 NP N E PITAXI AL P L ANAR T RANS ISTO R The GMBT555 1 is designed for general purpose appli cations requiring high breakdown voltag es. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0 .55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 10 0 A.
Manufacture

GTM

Datasheet
Download GMBT5551 Datasheet




 GMBT5551
GMBT5551
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMBT5551 is designed for general purpose applications requiring high breakdown voltages.
Package Dimensions
1/2
Absolute Maximum Ratings
Parameter
www.DataSheet4U.com Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCES
VEBO
IC
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
fT
Cob
Min.
180
160
6
-
-
-
-
-
-
80
80
30
100
-
Ta = 25
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
150
200
1
1
-
250
-
300
6
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
+150
-55 ~ +150
180
160
6.0
600
225
Unit
V
V
V
mA
mW
Unit
V
V
V
nA
nA
mV
mV
V
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=120V
VEB=4V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, f=1MHz




 GMBT5551
Characteristics Curve
2/2
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 FAX : 86-21-38950165










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