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PLANAR TRANSISTOR. GMBT8550L Datasheet

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PLANAR TRANSISTOR. GMBT8550L Datasheet






GMBT8550L TRANSISTOR. Datasheet pdf. Equivalent




GMBT8550L TRANSISTOR. Datasheet pdf. Equivalent





Part

GMBT8550L

Description

NPN EPITAXIAL PLANAR TRANSISTOR



Feature


ISSUED DATE :2004/08/27 REVISED DATE : GM BT8550L Description Package Dimensio ns P N P E P I TA X I A L T R A N S I S T O R The GMBT8550L(large current) i s designed for general purpose amplifie r applications. REF. A B C D E F Mill imeter Min. Max. 2.70 3.10 2.40 2.80 1. 40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF . G H K J L M Millimeter Min. Max. 1.9 0 REF. 1.00 1.30 0.
Manufacture

GTM

Datasheet
Download GMBT8550L Datasheet


GTM GMBT8550L

GMBT8550L; .10 0.20 0.40 0.85 1.15 0 10 Absolute M aximum Ratings at Ta = 25 Parameter www .DataSheet4U.com Symbol Tj Tstg VCBO V CEO VEBO IC PD Ratings +150 -55 ~ +150 -40 -25 -6 1.5 250 Unit Junction Tem perature Storage Temperature Collector to Base Voltage Collector to Emitter Vo ltage Emitter to Base Voltage Collector Current Total Power Dissipation V V V A mW Characteris.


GTM GMBT8550L

tics Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE hFE hFE f T Cob at Ta = 25 Min. -40 -25 -6 45 12 0 40 100 Typ. Max. -100 -100 -0.5 -1.2 -1 500 10 MHz pF Unit V V V nA nA V V V IC=-100uA IC=-2mA IE=-100uA VCB=-35V, IE=0 VEB=-6V,IC=0 IC=-800mA, IB=-80mA I C=-800mA, IB=-80mA VCE=-1V,IC=-10mA VCE =-1V, IC=-5mA VCE=-1V, IC=-100mA VCE=-1 V, IC=-800mA VCE=-.


GTM GMBT8550L

10V, IC=-20mA, f=100MHz VCB=-10V, f=1MHz Test Conditions Classification Of hFE Rank hFE BLC 120 - 200 BLD 160 - 300 B LE 250 - 500 1/2 ISSUED DATE :2004/08 /27 REVISED DATE : Characteristics Cur ve Important Notice: All rights are re served. Reproduction in whole or in par t is prohibited without the prior writt en approval of GTM. GTM reserves the ri ght to make change.

Part

GMBT8550L

Description

NPN EPITAXIAL PLANAR TRANSISTOR



Feature


ISSUED DATE :2004/08/27 REVISED DATE : GM BT8550L Description Package Dimensio ns P N P E P I TA X I A L T R A N S I S T O R The GMBT8550L(large current) i s designed for general purpose amplifie r applications. REF. A B C D E F Mill imeter Min. Max. 2.70 3.10 2.40 2.80 1. 40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF . G H K J L M Millimeter Min. Max. 1.9 0 REF. 1.00 1.30 0.
Manufacture

GTM

Datasheet
Download GMBT8550L Datasheet




 GMBT8550L
GMBT8550L
PNP EPITAXIAL TRANSISTOR
Description
The GMBT8550L(large current) is designed for general purpose amplifier applications.
Package Dimensions
ISSUED DATE :2004/08/27
REVISED DATE :
Absolute Maximum Ratings at Ta = 25
Parameter
www.DataSheet4U.com Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Characteristics at
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ta = 25
Symbol
BVCBO
Min.
-40
Typ.
-
Max.
-
BVCEO
BVEBO
ICBO
-25 -
-
-6 -
-
- - -100
IEBO
VCE(sat)
VBE(sat)
-100
- - -0.5
- - -1.2
VBE(on)
hFE
hFE
- - -1
45 -
-
120 - 500
hFE
40 -
-
fT
100 -
-
Cob - - 10
Classification Of hFE
Rank
hFE
BLC
120 - 200
BLD
160 - 300
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
+150
-55 ~ +150
-40
-25
-6
1.5
250
Unit
V
V
V
A
mW
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=-100uA
IC=-2mA
IE=-100uA
VCB=-35V, IE=0
VEB=-6V,IC=0
IC=-800mA, IB=-80mA
IC=-800mA, IB=-80mA
VCE=-1V,IC=-10mA
VCE=-1V, IC=-5mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
BLE
250 - 500
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 GMBT8550L
Characteristics Curve
ISSUED DATE :2004/08/27
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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