DatasheetsPDF.com

PLANAR TRANSISTOR. GMBTA06 Datasheet

DatasheetsPDF.com

PLANAR TRANSISTOR. GMBTA06 Datasheet






GMBTA06 TRANSISTOR. Datasheet pdf. Equivalent




GMBTA06 TRANSISTOR. Datasheet pdf. Equivalent





Part

GMBTA06

Description

NPN EPITAXIAL PLANAR TRANSISTOR



Feature


ISSUED DATE :2003/07/15 REVISED DATE :20 06/05/26B G M B TA 0 6 Description Pac kage Dimensions NPN SILICON TRANSISTOR The GMBTA06 is designed for general p urpose amplifier applications. REF. A B C D E F Millimeter Min. Max. 2.70 3. 10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimete r Min. Max. 1.90 REF. 1.00 1.30 0.10 0. 20 0.40 0.85 1.15 .
Manufacture

GTM

Datasheet
Download GMBTA06 Datasheet


GTM GMBTA06

GMBTA06; 0° 10° Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature St orage Temperature Collector to Base Vol tage Collector to Emitter Voltage Emitt er to Base Voltage Collector Current To tal Power Dissipation(Note1) Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 80 80 4 500 350 Unit www.Data Sheet4U.com V V V mA mW Note 1.Device mounted on FR-4=1.6.


GTM GMBTA06

*1.6*0.06in Electrical Characteristics( Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO I CEO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT M in. 80 80 4 50 50 100 Typ. - ,unless o therwise noted) Max. 100 100 250 1.2 MH z Unit V V V nA nA mV V IC=100uA, IE=0 IC=1mA, IB=0 IE=100uA, IC=0 VCB=80V, IE =0 VCE=80V, IB=0 IC=100mA, IB=10mA VCE= 1V, IC=100mA VCE=1V, IC=10mA VCE=1V, IC =100mA VCE=2V, IC=.


GTM GMBTA06

10mA, f=100MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions GMBTA06 Page: 1/2 ISSUED DATE :2003/ 07/15 REVISED DATE :2006/05/26B Charac teristics Curve Important Notice: All rights are reserved. Reproduction in wh ole or in part is prohibited without th e prior written approval of GTM. GTM re serves the right to make changes to its products without .

Part

GMBTA06

Description

NPN EPITAXIAL PLANAR TRANSISTOR



Feature


ISSUED DATE :2003/07/15 REVISED DATE :20 06/05/26B G M B TA 0 6 Description Pac kage Dimensions NPN SILICON TRANSISTOR The GMBTA06 is designed for general p urpose amplifier applications. REF. A B C D E F Millimeter Min. Max. 2.70 3. 10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimete r Min. Max. 1.90 REF. 1.00 1.30 0.10 0. 20 0.40 0.85 1.15 .
Manufacture

GTM

Datasheet
Download GMBTA06 Datasheet




 GMBTA06
G M B TA0 6
NPN SILICON TRANSISTOR
Description
The GMBTA06 is designed for general purpose amplifier applications.
Package Dimensions
ISSUED DATE :2003/07/15
REVISED DATE :2006/05/26B
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0° 10°
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
www.DataSheet4U.com Collector to Base Voltage
Tstg
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation(Note1)
PD
Note 1.Device mounted on FR-4=1.6*1.6*0.06in
Ratings
+150
-55~+150
80
80
4
500
350
Unit
V
V
V
mA
mW
Electrical Characteristics(Ta = 25
Symbol
Min.
Typ.
BVCBO
80 -
BVCEO
80 -
BVEBO
4-
ICBO
--
ICEO
--
*VCE(sat)
--
*VBE(on)
--
*hFE1
50 -
*hFE2
50 -
fT 100 -
,unless otherwise noted)
Max.
Unit
Test Conditions
- V IC=100uA, IE=0
- V IC=1mA, IB=0
- V IE=100uA, IC=0
100 nA VCB=80V, IE=0
100 nA VCE=80V, IB=0
250 mV IC=100mA, IB=10mA
1.2 V VCE=1V, IC=100mA
- VCE=1V, IC=10mA
- VCE=1V, IC=100mA
- MHz VCE=2V, IC=10mA, f=100MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GMBTA06
Page: 1/2




 GMBTA06
Characteristics Curve
ISSUED DATE :2003/07/15
REVISED DATE :2006/05/26B
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GMBTA06
Page: 2/2










Recommended third-party GMBTA06 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)