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PLANAR TRANSISTOR. GMBTA42 Datasheet

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PLANAR TRANSISTOR. GMBTA42 Datasheet






GMBTA42 TRANSISTOR. Datasheet pdf. Equivalent




GMBTA42 TRANSISTOR. Datasheet pdf. Equivalent





Part

GMBTA42

Description

NPN EPITAXIAL PLANAR TRANSISTOR



Feature


ISSUED DATE :2003/11/27 REVISED DATE :20 05/01/21B G M B TA 4 2 Description Pac kage Dimensions NP N EP ITAXIAL PL ANA R T RANS ISTO R The GMBTA42 is designe d for high voltage transistor. REF. A B C D E F Millimeter Min. Max. 2.70 3. 10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimete r Min. Max. 1.90 REF. 1.00 1.30 0.10 0. 20 0.40 0.85 1.15 .
Manufacture

GTM

Datasheet
Download GMBTA42 Datasheet


GTM GMBTA42

GMBTA42; 0 10 Absolute Maximum Ratings at Ta = 2 5 www.DataSheet4U.com Parameter Juncti on Temperature Storage Temperature Coll ector to Base Voltage Collector to Emit ter Voltage Emitter to Base Voltage Col lector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD R atings +150 -55~+150 300 300 6 500 350 Unit V V V mA mW Characteristics Sym bol BVCBO BVCEO BV.


GTM GMBTA42

EBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE 2 hFE3 fT Cob at Ta = 25 Min. 300 300 6 25 40 40 50 Typ. 3 MHz pF Max. 100 10 0 500 900 Unit V V V nA nA mV mV IC=100 uA , IE=0 IC=1mA ,IB=0 IE=100uA ,IC=0 V CB=200V, IE=0 VEB=6V ,IC=0 IC=20mA, IB= 2mA IC=20mA, IB=2mA VCE=10V, IC=1mA VCE =10V, IC=10mA VCE=10V, IC=30mA VCE=20V, IC=10mA, f=100MHz VCB=20V, f=1MHz Test Conditions 1/2 .


GTM GMBTA42

ISSUED DATE :2003/11/27 REVISED DATE :20 05/01/21B Characteristics Curve Impor tant Notice: All rights are reserved. R eproduction in whole or in part is proh ibited without the prior written approv al of GTM. GTM reserves the right to ma ke changes to its products without noti ce. GTM semiconductor products are not warranted to be suitable for use in lif e-support Applicat.

Part

GMBTA42

Description

NPN EPITAXIAL PLANAR TRANSISTOR



Feature


ISSUED DATE :2003/11/27 REVISED DATE :20 05/01/21B G M B TA 4 2 Description Pac kage Dimensions NP N EP ITAXIAL PL ANA R T RANS ISTO R The GMBTA42 is designe d for high voltage transistor. REF. A B C D E F Millimeter Min. Max. 2.70 3. 10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimete r Min. Max. 1.90 REF. 1.00 1.30 0.10 0. 20 0.40 0.85 1.15 .
Manufacture

GTM

Datasheet
Download GMBTA42 Datasheet




 GMBTA42
G M B TA4 2
ISSUED DATE :2003/11/27
REVISED DATE :2005/01/21B
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GMBTA42 is designed for high voltage transistor.
Package Dimensions
Absolute Maximum Ratings at Ta = 25
www.DataSheet4U.com
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
Total Power Dissipation
PD
Characteristics at Ta = 25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE1
hFE2
hFE3
fT
Cob
Min.
300
300
6
-
-
-
-
25
40
40
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
500
900
-
-
-
3
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
+150
-55~+150
300
300
6
500
350
Unit
V
V
V
mA
mW
Unit
V
V
V
nA
nA
mV
mV
MHz
pF
Test Conditions
IC=100uA , IE=0
IC=1mA ,IB=0
IE=100uA ,IC=0
VCB=200V, IE=0
VEB=6V ,IC=0
IC=20mA, IB=2mA
IC=20mA, IB=2mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, f=1MHz
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 GMBTA42
Characteristics Curve
ISSUED DATE :2003/11/27
REVISED DATE :2005/01/21B
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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