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MOS FET. 2SK1318 Datasheet

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MOS FET. 2SK1318 Datasheet
















2SK1318 FET. Datasheet pdf. Equivalent













Part

2SK1318

Description

Silicon N-Channel MOS FET



Feature


www.DataSheet4U.com 2SK1318 Silicon N C hannel MOS FET High Speed Power Switchi ng ADE-208-1269 (Z) 1st. Edition Jan. 2001 Features • • • • • Low o n-resistance High speed switching Low d rive current 4V gate drive device can b e driven from 5V source Suitable for mo tor drive, DC-DC converter, power switc h and solenoid drive Outline TO-220FM D G 1 2 3 1. Gate 2. Dr.
Manufacture

Hitachi Semiconductor

Datasheet
Download 2SK1318 Datasheet


Hitachi Semiconductor 2SK1318

2SK1318; ain 3. Source S 2SK1318 www.DataSheet4 U.com Absolute Maximum Ratings (Ta = 25 °C) Item Drain to source voltage Gate to source voltage Drain current Drain p eak current Body to drain diode reverse drain current Channel dissipation Chan nel temperature Storage temperature Not es: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGS S ID I D (peak)* I DR Pch.


Hitachi Semiconductor 2SK1318

*2 Tch Tstg 1 Ratings 120 ±20 20 80 20 35 150 –55 to +150 Unit V V A A A W °C °C 2 www.DataSheet4U.com 2SK13 18 Electrical Characteristics (Ta = 25 °C) Item Drain to source breakdown vol tage Gate to source breakdown voltage G ate to source leak current Zero gate vo ltege drain current Gate to source cuto ff voltage Static drain to source on st ate resistance Forward t.


Hitachi Semiconductor 2SK1318

ransfer admittance Input capacitance Out put capacitance Reverse transfer capaci tance Turn-on delay time Rise time Turn -off delay time Fall time Body–drain diode forward voltage Body–drain diod e reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Symbol V(BR)DSS V(BR) GSS I GSS I DSS VGS(off) RDS(on) Min 12 0 ±20 — — 1.0 — — 10 —.





Part

2SK1318

Description

Silicon N-Channel MOS FET



Feature


www.DataSheet4U.com 2SK1318 Silicon N C hannel MOS FET High Speed Power Switchi ng ADE-208-1269 (Z) 1st. Edition Jan. 2001 Features • • • • • Low o n-resistance High speed switching Low d rive current 4V gate drive device can b e driven from 5V source Suitable for mo tor drive, DC-DC converter, power switc h and solenoid drive Outline TO-220FM D G 1 2 3 1. Gate 2. Dr.
Manufacture

Hitachi Semiconductor

Datasheet
Download 2SK1318 Datasheet




 2SK1318
www.DataSheet4U.com
2SK1318
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1269 (Z)
1st. Edition
Jan. 2001
Features
Low on-resistance
High speed switching
Low drive current
4V gate drive device can be driven from 5V source
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220FM
D 12 3
1. Gate
G 2. Drain
3. Source
S




 2SK1318
w2wSwK.D1at3a1S8heet4U.com
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain
current
VDSS
VGSS
ID
I *1
D (peak)
I DR
Channel dissipation
Pch*2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
Ratings
120
±20
20
80
20
35
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2




 2SK1318
www.DataSheet4U.com
Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
Note: 1. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
I GSS
I DSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VDF
trr
Min
120
±20
1.0
10
2SK1318
Typ Max
——
——
0.095
0.11
17
1300
430
60
14
70
210
90
1.4
±10
250
2.0
0.12
0.16
Å\
Å\
280 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10mA, VGS = 0
IG = ±100µA, VDS = 0
VGS = ±16V, VDS = 0
VDS = 100V, VGS = 0
ID = 1mA, VDS = 10V
ID = 10A, VGS = 10V*1
ID = 10A, VGS = 4V*1
ID = 10A, VDS = 10V*1
VDS = 10V, VGS = 0,
f = 1MHz
ID = 10A,
VGS = 10V, RL = 3
IF = 20A, VGS = 0
IF = 20A, VGS = 0,
diF / dt = 50A / µs
3




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