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Flash Memory. K9L8G08U1A Datasheet

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Flash Memory. K9L8G08U1A Datasheet
















K9L8G08U1A Memory. Datasheet pdf. Equivalent













Part

K9L8G08U1A

Description

Flash Memory



Feature


www.DataSheet4U.com K9L8G08U1A K9G4G08U 0A K9G4G08B0A Preliminary FLASH MEMORY K9XXG08XXA INFORMATION IN THIS DOCUM ENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITH OUT NOTICE. NOTHING IN THIS DOCUMENT SH ALL BE CONSTRUED AS GRANTING ANY LICENS E, EXPRESS OR IMPLIED, BY ESTOPPEL OR O THERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG .
Manufacture

Samsung

Datasheet
Download K9L8G08U1A Datasheet


Samsung K9L8G08U1A

K9L8G08U1A; PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additio nal information about Samsung products, contact your nearest Samsung office. 2 . Samsung products are not intended for use in life support, critical care, me dical, safety equipment, or similar app lications where Pr.


Samsung K9L8G08U1A

oduct failure could result in loss of li fe or personal or physical harm, or any military or defense application, or an y governmental procurement to which spe cial terms or provisions may apply. * Samsung Electronics reserves the right to change products or specification wit hout notice. 1 www.DataSheet4U.com K 9L8G08U1A K9G4G08U0A K9G4G08B0A Prelim inary FLASH MEMORY.


Samsung K9L8G08U1A

Document Title 512M x 8 Bit / 1G x 8 B it NAND Flash Memory Revision History R evision No 0.0 0.1 History 1. Initial issue 1. Add 2.7V part 2. Add note of c ommand set table 3. Add nWP timing guid e 4. Endurance 10K -> 5K Draft Date Ma y. 2nd 2006 Sep. 25st 2006 Remark Adva nce Preliminary The attached data shee ts are prepared and approved by SAMSUNG Electronics. SAMS.





Part

K9L8G08U1A

Description

Flash Memory



Feature


www.DataSheet4U.com K9L8G08U1A K9G4G08U 0A K9G4G08B0A Preliminary FLASH MEMORY K9XXG08XXA INFORMATION IN THIS DOCUM ENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITH OUT NOTICE. NOTHING IN THIS DOCUMENT SH ALL BE CONSTRUED AS GRANTING ANY LICENS E, EXPRESS OR IMPLIED, BY ESTOPPEL OR O THERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG .
Manufacture

Samsung

Datasheet
Download K9L8G08U1A Datasheet




 K9L8G08U1A
www.DataSheet4U.com
K9L8G08U1A
K9G4G08U0A K9G4G08B0A
Preliminary
FLASH MEMORY
K9XXG08XXA
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
1




 K9L8G08U1A
www.DataSheet4U.com
K9L8G08U1A
K9G4G08U0A K9G4G08B0A
Document Title
512M x 8 Bit / 1G x 8 Bit NAND Flash Memory
Revision History
Revision No History
0.0 1. Initial issue
0.1 1. Add 2.7V part
2. Add note of command set table
3. Add nWP timing guide
4. Endurance 10K -> 5K
Preliminary
FLASH MEMORY
Draft Date Remark
May. 2nd 2006 Advance
Sep. 25st 2006 Preliminary
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
2




 K9L8G08U1A
www.DataSheet4U.com
K9L8G08U1A
K9G4G08U0A K9G4G08B0A
512M x 8 Bit / 1G x 8 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9G4G08B0A
K9G4G08U0A-P
K9G4G08U0A-I
K9L8G08U1A-I
Vcc Range
2.5V ~ 2.9V
2.7V ~ 3.6V
Organization
X8
Preliminary
FLASH MEMORY
PKG Type
MCP(TBD)
TSOP1
52ULGA
FEATURES
Voltage Supply
- 2.7V Device(K9G4G08B0A) : 2.5V ~ 2.9V
- 3.3V Device(K9G4G08U0A) : 2.7V ~ 3.6V
Organization
- Memory Cell Array : (512M + 16M) x 8bit
- Data Register : (2K + 64) x 8bit
Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (256K + 8K)Byte
Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 60µs(Max.)
- Serial Access : 30ns(Min.)
Memory Cell : 2bit / Memory Cell
Fast Write Cycle Time
- Program time : 800µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 5K Program/Erase Cycles(with 4bit/512byte ECC)
- Data Retention : 10 Years
Command Register Operation
Unique ID for Copyright Protection
Package :
- K9G4G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP1(12 x 20 / 0.5 mm pitch)
- K9G4G08U0A-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
- K9L8G08U1A-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
- K9G4G08B0A : MCP(TBD)
GENERAL DESCRIPTION
Offered in 512Mx8bit, the K9G4G08X0A is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 2.7V and 3.3V
Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be per-
formed in typical 800µs on the 2,112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block.
Data in the data register can be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and data input/out-
put as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition,
where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the
K9G4G08X0As extended reliability of 5K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out
algorithm. The K9G4G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and
other portable applications requiring non-volatility.
3




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