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Bridge Rectifiers. KBP201-G Datasheet

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Bridge Rectifiers. KBP201-G Datasheet
















KBP201-G Rectifiers. Datasheet pdf. Equivalent













Part

KBP201-G

Description

(KBP200-G - KBP210-G) Silicon Bridge Rectifiers



Feature


www.DataSheet4U.com Silicon Bridge Rect ifiers KBP200-G thru 2010-G (RoHS Devic e) Reverse Voltage: 50 ~ 1000 Volts For ward Current: 2.0 Amp Features: Diffuse d Junction Low Forward Voltage Drop Hig h Reliability High Current Capability H igh Surge Current Capability Ideal for Printed Circuit Boards H J D E I G B + ~ ~ A C KBP Min. Max Dim 14.22 15.24 A B 11.68 10.67 C 11.
Manufacture

Comchip Technology

Datasheet
Download KBP201-G Datasheet


Comchip Technology KBP201-G

KBP201-G; .68 12.70 D 4.57 5.08 3.60 4.10 E 2.16 2 .67 G 12.70 H 0.88 0.76 J 1.52 I All Di mension in mm KBP Mechanical Data: Ca se: Molded Plastic Terminals: Plated Le ads Solderable Per MIL STD-202, Method 208 Weight: 1.7 grams (approx.) Mountin g position: Any Maximum Ratings and El ectrical Characteristics Single Phase, half wave, 60Hz, resistive or inductive load. For capacit.


Comchip Technology KBP201-G

ive load, derate currently by 20%. Chara cteristics Peak Repetitive Reverse Volt age Working Peak Reverse Voltage DC Blo cking Voltage RMS Reverse Voltage Avera ge Rectified Output Current (Note1) @ T A = 50ºC Symbol KBP 200-G KBP 201-G KB P 202-G KBP KBP KBP KBP 204-G 206-G 208 -G 2010-G UNIT VRRM VRWM VR VR(RMS) Io 35 70 140 280 2.0 420 560 700 V A 50 1 00 200 400 600 800 .


Comchip Technology KBP201-G

1000 V Non-Repetitive Peak Forward Surg e Current 8.3ms Single IFSM half-sine-w ave superimposed on rated load (JEDEC M ethod) Forward Voltage (per element) @ IF=2.0A Peak Reverse Current @ TA=25ºC At Rated DC Blocking Voltage @ TA=100 C Rating for Fusing (t<8.3ms) Typical Thermal Resistance (Note3) Operating an d Storage Temperature Range Typical Jun ction Capacitance pe.





Part

KBP201-G

Description

(KBP200-G - KBP210-G) Silicon Bridge Rectifiers



Feature


www.DataSheet4U.com Silicon Bridge Rect ifiers KBP200-G thru 2010-G (RoHS Devic e) Reverse Voltage: 50 ~ 1000 Volts For ward Current: 2.0 Amp Features: Diffuse d Junction Low Forward Voltage Drop Hig h Reliability High Current Capability H igh Surge Current Capability Ideal for Printed Circuit Boards H J D E I G B + ~ ~ A C KBP Min. Max Dim 14.22 15.24 A B 11.68 10.67 C 11.
Manufacture

Comchip Technology

Datasheet
Download KBP201-G Datasheet




 KBP201-G
www.DataSheet4U.com
Silicon Bridge Rectifiers
KBP200-G thru 2010-G (RoHS Device)
Reverse Voltage: 50 ~ 1000 Volts
Forward Current: 2.0 Amp
Features:
Diffused Junction
Low Forward Voltage Drop
A
High Reliability
High Current Capability
B
+~~-
High Surge Current Capability
Ideal for Printed Circuit Boards
Mechanical Data:
Case: Molded Plastic
Terminals: Plated Leads Solderable Per MIL
STD-202, Method 208
Weight: 1.7 grams (approx.)
Mounting position: Any
J
D EI
KBP
C
KBP
Dim Min. Max
A 14.22 15.24
H
B 10.67 11.68
C 11.68 12.70
D
4.57
5.08
E
3.60
4.10
G
2.16
2.67
H 12.70
-
GJ
I
0.76
1.52
0.88
All Dimension in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate currently by 20%.
Characteristics
Symbol
KBP
200-G
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM 50
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS) 35
Average Rectified Output Current (Note1) @ TA = 50ºC
Io
Non-Repetitive Peak Forward Surge Current 8.3ms Single
half-sine-wave superimposed on rated load (JEDEC
IFSM
Method)
KBP
201-G
100
70
KBP
202-G
200
140
KBP KBP KBP KBP
204-G 206-G 208-G 2010-G
400 600 800 1000
280 420 560 700
2.0
60
UNIT
V
V
A
A
Forward Voltage (per element) @ IF=2.0A
VFM
1.1
V
Peak Reverse Current @ TA=25ºC
At Rated DC Blocking Voltage @ TA=100ºC
IRM
10 uA
500
Rating for Fusing (t<8.3ms)
I2t 15 A2S
Typical Thermal Resistance (Note3)
RθJA
30 K/W
Operating and Storage Temperature Range
Typical Junction Capacitance per element (Note2)
TJ, TSTG
CJ
-55 to +160
25
ºC
pF
Note:
1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance junction to ambient mounted on PC board with 12mm2 copper pad.
“-G” suffix designated RoHS compliant version
Comhip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page1




 KBP201-G
Silicon Bridge Rectifiers
KBP200-G thru 2010-G (RoHS Device)
Rating and Characteristic Curves (KBPP200-G ~ KBP2010-G)
2.0
10
1.5 TJ = 150ºC
1.0
1.0
TJ = 25ºC
0.5
0
0
100
80
75 150
T, Temperature (ºC)
Flg1. Forward Current Derating Curve
225
TJ=150ºC
Single Half
Sine Wave
(JEDEC Nethod)
60
40
20
0
1 10 100
Number of Cycles At 60Hz
Flg3. Max Non-Repetitive Peak Fwd Surge Current
0.1
0
0
Pulse Width
=300 uS
0.2 0.4 0.6
0.8 1.0 1.2
VF, Instantaneous Fwd Voltage (V)
Flg2. Typical Fwd Characteristics
1.4
100
TJ=25ºC
10
1
1 10 100
VR, Reverse Voltage (V)
Flg 4. Typical Junction Capacitance
“-G” suffix designated RoHS compliant version
Comhip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page2




 KBP201-G
Silicon Bridge Rectifiers
KBP200-G thru 2010-G (RoHS Device)
Rating and Characteristic Curves (KBPP200-G ~ KBP2010-G)
10,000
1000
100
10
TJ = 150ºC
TJ = 125ºC
TJ = 100ºC
1.0
TJ = 25ºC
0.1
0.01
0
20 40 60 80 100 120
Percent of Rated Peak Reverse Voltage (%)
Flg5. Typical Reverse Characteristics
140
“-G” suffix designated RoHS compliant version
Comhip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page3




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