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IGBT. 7MBP25TEA120 Datasheet

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IGBT. 7MBP25TEA120 Datasheet
















7MBP25TEA120 IGBT. Datasheet pdf. Equivalent













Part

7MBP25TEA120

Description

IGBT



Feature


7MBP25TEA120 Econo IPM series Features Temperature protection provided by di rectly detecting the junction temperatu re of the IGBTs · Low power loss and s oft switching · High performance and h igh reliability IGBT with overheating p rotection · Higher reliability because of a big decrease in number of parts i n built-in control circuit www.DataShe et4U.com 1200V / 25A .
Manufacture

Fuji Electric

Datasheet
Download 7MBP25TEA120 Datasheet


Fuji Electric 7MBP25TEA120

7MBP25TEA120; 7 in one-package Maximum ratings and ch aracteristics Absolute maximum ratings( at Tc=25°C unless otherwise specified) Item Bus voltage DC Surge Short operat ing Symbol VDC VDC(surge) V SC VCES IC ICP -IC PC IC ICP IF PC V CC Vin Iin VA LM IALM Tj Topr Tstg Tsol Viso Rating M in. Max. 0 0 400 0 -0.5 -0.5 -0.5 -20 - 40 900 1000 800 1200 25 50 25 139 15 30 15 139 20 Vcc+0.5 .


Fuji Electric 7MBP25TEA120

3 Vcc 20 150 100 125 260 AC2500 3.5 Unit V V V V A A A W A A A W V V mA V mA ° C °C °C °C V N·m Collector-Emitter voltage *1 Collector current Inverter Brake DC 1ms DC Collector power dissip ation One transistor *3 Collector curre nt DC 1ms Forward current diode Collect or power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input s ignal voltage *5 Input .


Fuji Electric 7MBP25TEA120

signal current Alarm signal voltage *6 A larm signal current *7 Junction tempera ture Operating case temperature Storage temperature Solder temperature *8 Isol ating voltage (Terminal to base, 50/60H z sine wave 1min.) Screw torque Mountin g (M5) Note *1 : Vces shall be applied to the input voltage between terminal P and U or ‚V or W or DB, N and U or V or W or DB *2 : 12.





Part

7MBP25TEA120

Description

IGBT



Feature


7MBP25TEA120 Econo IPM series Features Temperature protection provided by di rectly detecting the junction temperatu re of the IGBTs · Low power loss and s oft switching · High performance and h igh reliability IGBT with overheating p rotection · Higher reliability because of a big decrease in number of parts i n built-in control circuit www.DataShe et4U.com 1200V / 25A .
Manufacture

Fuji Electric

Datasheet
Download 7MBP25TEA120 Datasheet




 7MBP25TEA120
www.DataSheet4U.com
7MBP25TEA120
Econo IPM series
1200V / 25A 7 in one-package
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Item
Symbol
Bus voltage
DC
Surge
Short operating
Collector-Emitter voltage *1
Collector current
DC
1ms
DC
Collector power dissipation One transistor *3
Collector current
DC
1ms
Forward current diode
Collector power dissipation One transistor *3
Supply voltage of Pre-Driver *4
Input signal voltage *5
Input signal current
Alarm signal voltage *6
Alarm signal current *7
Junction temperature
Operating case temperature
Storage temperature
Solder temperature *8
Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)
Screw torque
Mounting (M5)
VDC
VDC(surge)
VSC
VCES
IC
ICP
-IC
PC
IC
ICP
IF
PC
VCC
Vin
Iin
VALM
IALM
Tj
Topr
Tstg
Tsol
Viso
Rating
Min.
Max.
0
0
400
0
-
-
-
-
-
-
-
-
-0.5
-0.5
-
-0.5
-
-
-20
-40
-
-
-
900
1000
800
1200
25
50
25
139
15
30
15
139
20
Vcc+0.5
3
Vcc
20
150
100
125
260
AC2500
3.5
Unit
V
V
V
V
A
A
A
W
A
A
A
W
V
V
mA
V
mA
°C
°C
°C
°C
V
N·m
Note
*1 : Vces shall be applied to the input voltage between terminal P and U or ‚V or W or DB, N and U or V or W or DB
*2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/2.05/(25 x 2.0) x 100>100%
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.90=139W [Inverter]
Pc=125°C/IGBT Rth(j-c)=125/0.90=139W [Brake]
*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13
*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13.
*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.
*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.
*8 : Immersion time 10±1sec.




 7MBP25TEA120
www.DataSheet4U.com
7MBP25TEA120
IGBT-IPM
Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)
Main circuit
Item
Symbol
Condition
Collector current at off signal input
Collector-Emitter saturation voltage
ICES
VCE(sat)
VCE=1200V Vin terminal open.
Ic=25A
Terminal
Forward voltage of FWD
Chip
VF -Ic=25A Terminal
Collector current at off signal input
Collector-Emitter saturation voltage
ICES
VCE(sat)
Chip
VCE=1200V Vin terminal open.
Ic=15A
Terminal
Forward voltage of Diode
VF -Ic=15A
Chip
Terminal
Turn-on time
Turn-off time
Reverse recovery time
Chip
ton VDC=600V,Tj=125°C
toff IC=25A Fig.1, Fig.6
trr VDC=600V, IF=25A Fig.1, Fig.6
Min.
-
-
-
-
-
-
-
-
-
-
1.2
-
-
Typ.
-
-
2.4
-
1.6
-
-
1.9
-
1.9
-
-
-
Max.
1.0
3.1
-
2.0
-
1.0
2.6
-
3.3
-
-
3.6
0.3
Unit
mA
V
V
mA
V
V
µs
Control circuit
Item
Supply current of P-line side pre-driver(one unit)
Supply current of N-line side pre-driver
Input signal threshold voltage (on/off)
Symbol
Iccp
ICCN
Vin(th)
Input zener voltage
Alarm signal hold time
VZ
tALM
Current limit resistor
RALM
Condition
Switching Frequency : 0 to 15kHz
Tc=-20 to 100°C Fig.7
ON
OFF
Rin=20k ohm
Tc=-20°C Fig.2
Tc=25°C Fig.2
Tc=125°C Fig.2
Alarm terminal
Min. Typ. Max. Unit
- - 15 mA
- - 45 mA
1.00 1.35 1.70 V
1.25 1.60 1.95 V
-
8.0 -
V
1.1 -
- ms
- 2.0 - ms
- - 4.0 ms
1425 1500 1575 ohm
Protection Section ( Vcc=15V)
Item
Over Current Protection Level of Inverter circuit
Over Current Protection Level of Brake circuit
Over Current Protection Delay time
SC Protection Delay time
IGBT Chip Over Heating
Protection Temperature Level
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
Symbol
IOC
IOC
tDOC
tSC
TjOH
Condition
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C Fig.4
Surface of IGBT chips
TjH
VUV
VH
Min.
38
23
-
-
150
-
11.0
0.2
Typ.
-
-
5
-
-
20
-
0.5
Max.
-
-
-
8
-
-
12.5
-
Unit
A
A
µs
µs
°C
°C
V
V
Thermal characteristics( Tc=25°C)
Item
Junction to Case thermal resistance *9
Inverter IGBT
FWD
Brake
IGBT
Case to fin thermal resistance with compound
*9 For 1device, Case is under the device
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Symbol
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)
Item
Common mode rectangular noise
Common mode lightning surge
Condition
Pulse width 1µs, polarity ±,10minuets
Judge : no over-current, no miss operating
Rise time 1.2µs, Fall time 50µs
Interval 20s, 10 times
Judge : no over-current, no miss operating
Recommendable value
Item
DC Bus Voltage
Operating Supply Voltage of Pre-Driver
Screw torque (M5)
Symbol
VDC
VCC
-
Weight
Item
Weight
Symbol
Wt
Min.
-
-
-
-
Typ.
-
-
-
0.05
Max.
0.90
2.05
0.90
-
Unit
°C/W
°C/W
°C/W
°C/W
Min.
±2.0
Typ.
-
±5.0 -
Max.
-
Unit
kV
- kV
Min.
-
13.5
2.5
Typ.
-
15.0
-
Max.
800
16.5
3.0
Unit
V
V
Nm
Min.
-
Typ. Max.
270 -
Unit
g




 7MBP25TEA120
www.DataSheet4U.com
7MBP25TEA120
IGBT-IPM
Vin Vin(th)
Ic
trr
90%
ton
On
90%
50%
Vin(th)
10%
toff
/Vin
Vge (Inside IPM )
Figure 1. Switching Time Waveform Definitions
off
on
Gate On
Gate Off
off
on
Fault (Inside IPM ) normal
/ALM
alarm
tALM > Max.
1
tALM > Max.
2
t ALM 2ms(typ.)
3
Fault : Over-current,Over-heat or Under-voltage
Figure 2. Input/Output Timing Diagram
tsc
Ic Ic
Ic
IALM
IALM
IALM
Figure.4 Definition of tsc
VccU
CT
P
DC
15V
20k
VinU
IPM
U
SW1 GNDU
V
Vcc
DC 20k VinX
15V
W
SW2 GND
N
+
4700p
Earth
Cooling
Fin
Figure 5. Noise Test Circuit
Vcc
PP
20 k IIPPMM
DC
15V Vin
HCP-L
4504
GND
N
L
+
+
DC
360000VV
Ic
Figure 6. Switching Characteristics Test Circuit
ACA20C04V00V
Noise
Icc
A
DC
15V
P.G
+8V
fsw
Vcc
IPM
Vin
GND
P
U
V
W
N
Figure 7. Icc Test Circuit




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