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RECOVERY DIODE. HFA08TA60CPBF Datasheet

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RECOVERY DIODE. HFA08TA60CPBF Datasheet
















HFA08TA60CPBF DIODE. Datasheet pdf. Equivalent













Part

HFA08TA60CPBF

Description

SOFT RECOVERY DIODE



Feature


www.DataSheet4U.com PD-95735 HFA08TA60 CPbF HEXFRED Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free TM Ult rafast, Soft Recovery Diode 2 VR = 600V VF = 1.8V Qrr * = 40nC 1 3 di(rec)M/dt * = 280A/µs * 125°C Benefits • Re duced RFI and EMI • Reduced Power Loss in Diode and Switching Tran.
Manufacture

International Rectifier

Datasheet
Download HFA08TA60CPBF Datasheet


International Rectifier HFA08TA60CPBF

HFA08TA60CPBF; sistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count International Rectifier's HFA08TA60C i s a state of the art center tap ultra f ast recovery diode. Employing the lates t in epitaxial construction and advance d processing techniques it features a s uperb combination of characteristics wh ich result in performance which is unsu rpassed by any rectif.


International Rectifier HFA08TA60CPBF

ier previously available. With basic rat ings of 600 volts and 4 amps per Leg co ntinuous current, the HFA08TA60C is esp ecially well suited for use as the comp anion diode for IGBTs and MOSFETs. In a ddition to ultra fast recovery time, th e HEXFRED product line features extreme ly low values of peak recovery current (IRRM) and does not exhibit any tendenc y to "snap-off" du.


International Rectifier HFA08TA60CPBF

ring the tb portion of recovery. The HEX FRED features combine to offer designer s a rectifier with lower noise and sign ificantly lower switching losses in bot h the diode and the switching transisto r. These HEXFRED advantages can help to significantly reduce snubbing, compone nt count and heatsink sizes. The HEXFRE D HFA08TA60C is ideally suited for appl ications in power .





Part

HFA08TA60CPBF

Description

SOFT RECOVERY DIODE



Feature


www.DataSheet4U.com PD-95735 HFA08TA60 CPbF HEXFRED Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free TM Ult rafast, Soft Recovery Diode 2 VR = 600V VF = 1.8V Qrr * = 40nC 1 3 di(rec)M/dt * = 280A/µs * 125°C Benefits • Re duced RFI and EMI • Reduced Power Loss in Diode and Switching Tran.
Manufacture

International Rectifier

Datasheet
Download HFA08TA60CPBF Datasheet




 HFA08TA60CPBF
www.DataSheet4U.com
PD-95735
HFA08TA60CPbF
HEXFREDTM
Ultrafast, Soft Recovery Diode
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
• Lead-Free
2
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
1
3
Description
International Rectifier's HFA08TA60C is a state of the art center tap ultra fast
recovery diode. Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier previously available.
With basic ratings of 600 volts and 4 amps per Leg continuous current, the
HFA08TA60C is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product
line features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA08TA60C is ideally
suited for applications in power supplies and power conversion systems (such
as inverters), motor drives, and many other similar applications where high
speed, high efficiency is needed.
VR = 600V
VF = 1.8V
Qrr * = 40nC
di(rec)M/dt * = 280A/µs
* 125°C
TO-220AB
Absolute Maximum Ratings
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
www.irf.com
Max
600
4.0
25
16
25
10
- 55 to +150
Units
V
A
W
C
1
10/18/04




 HFA08TA60CPBF
HFA08TA60CPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
VBR
Cathode Anode Breakdown Voltage
600
V IR = 100µA
1.5 1.8
IF = 4.0A
VFM Max Forward Voltage
1.8 2.2 V IF = 8.0A
See Fig. 1
IRM Max Reverse Leakage Current
CT Junction Capacitance
LS Series Inductance
1.4 1.7
IF = 4.0A, TJ = 125°C
0.17 3.0 µA VR = VR Rated
See Fig. 2
44 300
TJ = 125°C, VR = 0.8 x VR RatedD Rated
4.0 8.0 pF VR = 200V
See Fig. 3
Measured lead to lead 5mm from
8.0 nH package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
di(rec)M/dt1
di(rec)M/dt2
Parameter
Reverse Recovery Time
See Fig. 5, 6 & 16
Peak Recovery Current
See Fig. 7& 8
Reverse Recovery Charge
See Fig. 9 & 10
Peak Rate of Fall of Recovery Current
During tb
See Fig. 11 & 12
Min Typ Max Units
Test Conditions
17 IF = 1.0A, dif/dt = 200A/µs, VR = 30V
28 42 ns TJ = 25°C
38 57
TJ = 125°C
IF = 4.0A
2.9 5.2
3.7 6.7
A
TJ = 25°C
TJ = 125°C
40 60 nC TJ = 25°C
70 105
TJ = 125°C
VR = 200V
dif/dt = 200A/µs
280
235
A/µs
TJ = 25°C
TJ = 125°C
Thermal - Mechanical Characteristics
Tlead
RthJC
RthJA ‚
RthCSƒ
Parameter
Lead Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
Wt Weight
T Mounting Torque
 0.063 in. from Case (1.6mm) for 10 sec
‚ Typical Socket Mount
ƒ Mounting Surface, Flat, Smooth and Greased
Min
6.0
5.0
2
Typ Max Units
300 °C
5.0
80 K/W
0.5
2.0 g
0.07
(oz)
12 Kg-cm
10 lbf•in
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 HFA08TA60CPBF
HFA08TA60CPbF
100 1000
100 TJ = 150°C
10 TJ = 125°C
1
10
TJ = 150°C
0.1
TJ = 125°C
0.01 TJ = 25°C
TJ = 25°C
0.001
0
100 200 300 400 500
Reverse Voltage - VR (V)
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
1 100 A
0.1
0.0 1.0 2.0 3.0 4.0 5.0 6.0
FFoorrwwaarrd Voltage Drop - VVFMFM((VV))
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current,
10
TJ = 25°C
10
1
1 10 100
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1000
D = 0.50
1 0.20
0.10
0.05
0.02
0.01
0.1
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
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1
3




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