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PLANAR TRANSISTOR. MID32C Datasheet

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PLANAR TRANSISTOR. MID32C Datasheet
















MID32C TRANSISTOR. Datasheet pdf. Equivalent













Part

MID32C

Description

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR



Feature


www.DataSheet4U.com DC COMPONENTS CO., LTD. R MID32C DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITA XIAL PLANAR TRANSISTOR Description Des igned for use in general purpose amplif ier and switching applications. TO-251 Pinning 1 = Base 2 = Collector 3 = Em itter .268(6.80) .252(6.40) .217(5.50) .205(5.20) 2 .022(0.55) .018(0.45) .0 63(1.60) .055(1.40.
Manufacture

Dc Components

Datasheet
Download MID32C Datasheet


Dc Components MID32C

MID32C; ) Absolute Maximum Ratings(TA=25oC) Cha racteristic Collector-Base Voltage Coll ector-Emitter Voltage Emitter-Base Volt age Collector Current Total Power Dissi pation(TC=25 C) Junction Temperature St orage Temperature o .284(7.20) .268(6. 80) Symbol VCBO VCEO VEBO IC PD TJ TST G Rating -100 -100 -5 -3 15 +150 -55 t o +150 Unit V V V A W o o .032 Max (0. 80) .035 Max (0.90.


Dc Components MID32C

) 1 2 3 .059(1.50) .035(0.90) .256 Mi n (6.50) .024(0.60) .018(0.45) C .181 Typ (4.60) .095(2.40) .087(2.20) C Dimensions in inches and (millimeters) Electrical Characteristics o Character istic (Ratings at 25 C ambient tempera ture unless otherwise specified) Symbo l BVCBO BVCEO ICES ICEO IEBO VCE(sat) V BE(on) hFE1 hFE2 fT 380µs, Duty Cycle 2% (1) Min -100 -1.


Dc Components MID32C

00 25 10 3 Typ - Max -20 -50 -1 -1.2 - 1.8 50 - Unit V V µA µA mA V V MHz Test Conditions IC=-1mA, IE=0 IC=-30mA, IB=0 VCE=-100V, VBE=0 VCE=-60V, IB=0 V EB=-5V, IC=0 IC=-3A, IB=-375mA IC=-3A, VCE=-4V IC=-1A, VCE=-4V IC=-3A, VCE=-4V IC=-0.5A, VCE=-10V, f=1MHz Collector- Base Breakdown Volatge Collector-Emitte r Breakdown Voltage Collector Cutoff Cu rrent Emitter Cutoff.




Part

MID32C

Description

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR



Feature


www.DataSheet4U.com DC COMPONENTS CO., LTD. R MID32C DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITA XIAL PLANAR TRANSISTOR Description Des igned for use in general purpose amplif ier and switching applications. TO-251 Pinning 1 = Base 2 = Collector 3 = Em itter .268(6.80) .252(6.40) .217(5.50) .205(5.20) 2 .022(0.55) .018(0.45) .0 63(1.60) .055(1.40.
Manufacture

Dc Components

Datasheet
Download MID32C Datasheet




 MID32C
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
MID32C
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in general purpose amplifier and
switching applications.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation(TC=25oC)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
-100
-100
-5
-3
15
+150
-55 to +150
Unit
V
V
V
A
W
oC
oC
TO-251
.268(6.80)
.252(6.40)
.217(5.50)
.205(5.20)
.022(0.55)
.018(0.45)
.284(7.20)
.268(6.80)
2
.063(1.60)
.055(1.40)
123
.035 Max
(0.90)
.256
(6.50)
Min
.032
(0.80)
Max
.181 Typ
(4.60)
.059(1.50)
.035(0.90)
.024(0.60)
.018(0.45)
.095(2.40)
.087(2.20)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO
Collector-Emitter Breakdown Voltage
BVCEO
Collector Cutoff Current
ICES
ICEO
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
IEBO
VCE(sat)
VBE(on)
DC Current Gain(1)
hFE1
hFE2
Transition Frequency
fT
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
-100
-100
-
-
-
-
-
25
10
3
-
-
-
-
-
-
-
-
-
-
Max Unit
Test Conditions
- V IC=-1mA, IE=0
- V IC=-30mA, IB=0
-20 µA VCE=-100V, VBE=0
-50 µA VCE=-60V, IB=0
-1 mA VEB=-5V, IC=0
-1.2 V IC=-3A, IB=-375mA
-1.8 V IC=-3A, VCE=-4V
- - IC=-1A, VCE=-4V
50 - IC=-3A, VCE=-4V
- MHz IC=-0.5A, VCE=-10V, f=1MHz












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