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capacitance diode. BB179B Datasheet

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capacitance diode. BB179B Datasheet
















BB179B diode. Datasheet pdf. Equivalent













Part

BB179B

Description

UHF variable capacitance diode



Feature


BB179B UHF variable capacitance diode Re v. 3 — 5 September 2011 Product data sheet 1. Product profile 1.1 General description The BB179B is a variable c apacitance diode, fabricated in planar technology and encapsulated in the SOD5 23 (SC-79) ultra small SMD plastic pack age. The excellent matching performance is achieved by gliding matching and a Direct Matching Asse.
Manufacture

NXP

Datasheet
Download BB179B Datasheet


NXP BB179B

BB179B; mbly (DMA) procedure. 1.2 Features and benefits  Excellent linearity  Ex cellent matching to 2 % DMA  Ultra s mall SMD plastic package  Cd(28V): 2 .1 pF; Cd(1V) to Cd(28V) ratio: 9  L ow series resistance. 1.3 Applications  Electronic tuning in UHF televisio n tuners  Voltage Controlled Oscilla tors (VCO). 2. Pinning information Ta ble 1. Pin 1 2 Pinning Descript.


NXP BB179B

ion cathode anode [1] The marking bar i ndicates the cathode. 3. Ordering infor mation Simplified outline[1] Symbol 1 2 sym008 Table 2. Ordering informat ion Type number Package Name Descri ption BB179B SC-79 plastic surface m ounted package; 2 leads Version SOD523 NXP Semiconductors BB179B UHF variab le capacitance diode 4. Marking Table 3. Marking Type n.


NXP BB179B

umber BB179B Marking code C 5. Limitin g values Table 4. Limiting values In a ccordance with the Absolute Maximum Rat ing System (IEC 60134). Symbol Paramet er Conditions Min VR reverse voltag e - VRM peak reverse voltage in ser ies with a - 10 k resistor IF fo rward current - Tstg storage tempera ture 55 Tj junction temperature 55 Max Unit 32 V .





Part

BB179B

Description

UHF variable capacitance diode



Feature


BB179B UHF variable capacitance diode Re v. 3 — 5 September 2011 Product data sheet 1. Product profile 1.1 General description The BB179B is a variable c apacitance diode, fabricated in planar technology and encapsulated in the SOD5 23 (SC-79) ultra small SMD plastic pack age. The excellent matching performance is achieved by gliding matching and a Direct Matching Asse.
Manufacture

NXP

Datasheet
Download BB179B Datasheet




 BB179B
BB179B
UHF variable capacitance diode
Rev. 3 — 5 September 2011
Product data sheet
1. Product profile
1.1 General description
The BB179B is a variable capacitance diode, fabricated in planar technology and
encapsulated in the SOD523 (SC-79) ultra small SMD plastic package. The excellent
matching performance is achieved by gliding matching and a Direct Matching Assembly
(DMA) procedure.
1.2 Features and benefits
Excellent linearity
Excellent matching to 2 % DMA
Ultra small SMD plastic package
Cd(28V): 2.1 pF; Cd(1V) to Cd(28V) ratio: 9
Low series resistance.
1.3 Applications
Electronic tuning in UHF television tuners
Voltage Controlled Oscillators (VCO).
2. Pinning information
Table 1.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking bar indicates the cathode.
3. Ordering information
Simplified outline[1] Symbol
1
2
sym008
Table 2. Ordering information
Type number
Package
Name
Description
BB179B
SC-79
plastic surface mounted package; 2 leads
Version
SOD523




 BB179B
NXP Semiconductors
BB179B
UHF variable capacitance diode
4. Marking
Table 3. Marking
Type number
BB179B
Marking code
C
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VR
reverse voltage
-
VRM
peak reverse voltage
in series with a
-
10 kresistor
IF
forward current
-
Tstg
storage temperature
55
Tj
junction temperature
55
Max Unit
32
V
35
V
20
mA
+150 C
+125 C
6. Characteristics
Table 5. Characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
IR
reverse current see Figure 2
VR = 30 V
-
-
10
nA
VR = 30 V; Tj = 85 C
-
-
200
nA
rs
diode series
f = 470 MHz
resistance
[1] -
0.6
0.75
Cd
diode
f = 1 MHz;
capacitance
see Figure 1 and 3
C-----d----1---V----
Cd2V
VR = 1 V
VR = 28 V
capacitance ratio f = 1 MHz
18.22 -
20
pF
1.9
2.1
2.25 pF
-
1.27 -
C-----d----1---V------ capacitance ratio f = 1 MHz
C d 28 V
8.45 9
10
C-----d----2---5---V---capacitance ratio f = 1 MHz
C d 28 V
-
1.05 -
----C----d-
capacitance
matching
VR = 1 V to 28 V; in a
sequence of 10 diodes
-
-
2
%
Cd
(gliding)
[1] VR is the value at which Cd = 9 pF
BB179B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 September 2011
© NXP B.V. 2011. All rights reserved.
2 of 8




 BB179B
NXP Semiconductors
BB179B
UHF variable capacitance diode
24
Cd
(pF)
20
16
12
8
4
0
101
1
10
f = 1 MHz; Tj = 25 C.
Fig 1. Diode capacitance as a function of reverse voltage; typical values.
103
IR
(nA)
102
mlc816
103
TCd
(K1)
104
10
mbk440
102
VR (V)
mlc815
1
0
20
40
60
80
100
Tj (°C)
Fig 2. Reverse current as a function of junction
temperature; maximum values.
105
101
1
10 VR (V) 102
Fig 3.
Tj = 0 C to 85 C.
Temperature coefficient of diode capacitance
as a function of reverse voltage; typical
values.
BB179B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 September 2011
© NXP B.V. 2011. All rights reserved.
3 of 8




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