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capacitance diode. BB202LX Datasheet

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capacitance diode. BB202LX Datasheet
















BB202LX diode. Datasheet pdf. Equivalent













Part

BB202LX

Description

Low-voltage variable capacitance diode



Feature


www.DataSheet4U.com BB202LX Low-voltage variable capacitance diode Rev. 01 — 11 April 2006 Preliminary data sheet 1. Product profile 1.1 General descrip tion The BB202LX is a planar technology variable capacitance diode in a SOD882 T ultra small leadless plastic SMD pack age. 1.2 Features I I I I I Very steep Capacitance-Voltage (CV) curve Cd(0V2) : 30.5 pF; Cd(2V3): 9..
Manufacture

NXP

Datasheet
Download BB202LX Datasheet


NXP BB202LX

BB202LX; 5 pF Ratio Cd(0V2) to Cd(2V3) minimal 2. 5 Ultra small leadless SMD package Low series resistance 1.3 Applications I V oltage Controlled Oscillators (VCO) I E lectronic tuning in FM radios I Recomme nded as the reference VCO varactor for Philips Tuner ICs TEA5764, TEA5767 and TEA5768 in mobile and portable platform s 2. Pinning information Table 1. Pin 1 2 Discrete pinni.


NXP BB202LX

ng Description cathode anode 1 2 sym008 Simplified outline [1] Symbol Trans parent top view [1] The marking bar i ndicates the cathode. www.DataSheet4U. com Philips Semiconductors BB202LX Lo w-voltage variable capacitance diode 3 . Ordering information Table 2. Orderin g information Name BB202LX Description leadless ultra small plastic package; 2 terminals; body 1.0.


NXP BB202LX

× 0.6 × 0.4 mm Version SOD882T Type n umber Package 4. Marking Table 3. BB20 2LX Marking Marking code L1 Type number 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symb ol VR IF Tstg Tj Parameter reverse volt age forward current storage temperature junction temperature Conditions Min 55 −55 Max 6 10 +85 +.





Part

BB202LX

Description

Low-voltage variable capacitance diode



Feature


www.DataSheet4U.com BB202LX Low-voltage variable capacitance diode Rev. 01 — 11 April 2006 Preliminary data sheet 1. Product profile 1.1 General descrip tion The BB202LX is a planar technology variable capacitance diode in a SOD882 T ultra small leadless plastic SMD pack age. 1.2 Features I I I I I Very steep Capacitance-Voltage (CV) curve Cd(0V2) : 30.5 pF; Cd(2V3): 9..
Manufacture

NXP

Datasheet
Download BB202LX Datasheet




 BB202LX
www.DataSheet4U.com
BB202LX
Low-voltage variable capacitance diode
Rev. 01 — 11 April 2006
Preliminary data sheet
1. Product profile
1.1 General description
The BB202LX is a planar technology variable capacitance diode in a SOD882T ultra small
leadless plastic SMD package.
1.2 Features
I Very steep Capacitance-Voltage (CV) curve
I Cd(0V2): 30.5 pF; Cd(2V3): 9.5 pF
I Ratio Cd(0V2) to Cd(2V3) minimal 2.5
I Ultra small leadless SMD package
I Low series resistance
1.3 Applications
I Voltage Controlled Oscillators (VCO)
I Electronic tuning in FM radios
I Recommended as the reference VCO varactor for Philips Tuner ICs
TEA5764, TEA5767 and TEA5768 in mobile and portable platforms
2. Pinning information
Table 1.
Pin
1
2
Discrete pinning
Description
cathode
anode
Simplified outline Symbol
[1]
12
Transparent
top view
sym008
[1] The marking bar indicates the cathode.




 BB202LX
www.DataSheet4U.com
Philips Semiconductors
BB202LX
Low-voltage variable capacitance diode
3. Ordering information
Table 2. Ordering information
Type number Package
Name Description
BB202LX
-
leadless ultra small plastic package; 2 terminals;
body 1.0 × 0.6 × 0.4 mm
Version
SOD882T
4. Marking
Table 3. Marking
Type number
BB202LX
Marking code
L1
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit
VR reverse voltage
IF forward current
Tstg storage temperature
Tj junction temperature
- 6V
- 10 mA
55 +85 °C
55 +85 °C
6. Characteristics
Table 5. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
IR reverse current
rs diode series resistance
Cd diode capacitance
CC-----dd---((--02--VV----23--))
diode capacitance ratio
Conditions
see Figure 3
VR = 6 V
VR = 6 V; Tj = 85 °C
f = 100 MHz; see Figure 2
see Figure 1 and Figure 4; f = 1 MHz;
VR = 0.2 V
VR = 2.3 V
f = 1 MHz
[1]
[1] rs is the value at which Cd = 30 pF.
Min Typ Max
- - 10
- - 100
- 0.35 -
28.2 -
7.2 -
2.5 -
33.5
11.2
-
Unit
nA
nA
pF
pF
BB202LX_1
Preliminary data sheet
Rev. 01 — 11 April 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
2 of 7




 BB202LX
www.DataSheet4U.com
Philips Semiconductors
BB202LX
Low-voltage variable capacitance diode
40
Cd
(pF)
30
001aae545
0.8
rs
()
0.6
001aae546
20 0.4
10 0.2
0
101
1 10
VR (V)
f = 1 MHz; Tj = 25 °C.
Fig 1. Diode capacitance as a function of reverse
voltage; typical values
0
101
1
10 102
VR (V)
f = 470 MHz; Tj = 25 °C.
Fig 2. Diode serial resistance as a function of reverse
voltage; typical values
103
IR
(nA)
102
001aae541
102
TCCd
(K1)
103
001aae542
10 104
1
0 20 40 60 80 100
Tj (°C)
Fig 3. Reverse current as a function of junction
temperature; maximum values
105
101
1
10 102
VR (V)
Tj = 0 °C to 85 °C.
Fig 4. Temperature coefficient of diode capacitance
as a function of reverse voltage; typical values
BB202LX_1
Preliminary data sheet
Rev. 01 — 11 April 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
3 of 7




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