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EFFECT TRANSISTOR. 2SJ687 Datasheet

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EFFECT TRANSISTOR. 2SJ687 Datasheet






2SJ687 TRANSISTOR. Datasheet pdf. Equivalent




2SJ687 TRANSISTOR. Datasheet pdf. Equivalent





Part

2SJ687

Description

MOS FIELD EFFECT TRANSISTOR



Feature


www.DataSheet4U.com DATA SHEET MOS FIE LD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven b y a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = − 10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 3.0 V, ID = −10 A) RDS(on)3.
Manufacture

NEC

Datasheet
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NEC 2SJ687

2SJ687; = 20 mΩ MAX. (VGS = −2.5 V, ID = − 10 A) • 2.5 V drive available • Ava lanche capability ratings ORDERING INF ORMATION PART NUMBER 2SJ687-ZK-E1-AY 2S J687-ZK-E2-AY Note Note LEAD PLATING P ure Sn (Tin) PACKING Tape 2500 p/reel PACKAGE TO-252 (MP-3ZK) 0.27 g TYP. N ote Pb-free (This product does not cont ain Pb in external electrode.) ABSOLUT E MAXIMUM RATINGS (TA = 25°.


NEC 2SJ687

C) Drain to Source Voltage (VGS = 0 V) G ate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Curren t (pulse) Note1 (TO-252) −20 m12 m20 m60 36 1.0 150 −55 to +150 −20 40 V V A A W W °C °C A mJ VDSS VGSS ID( DC) ID(pulse) PT1 PT2 Tch Tstg Total P ower Dissipation (TC = 25°C) Total Pow er Dissipation (TA = 25°C) Channel Tem perature Storage Temperature .


NEC 2SJ687

Single Avalanche Current Single Avalanch e Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. St arting Tch = 25°C, VDD = −10 V, RG = 25 Ω, VGS = −12 → 0 V The inform ation in this document is subject to ch ange without notice. Before using this document, please confirm that this is t he latest version. Not all products an d/or types are available in eve.

Part

2SJ687

Description

MOS FIELD EFFECT TRANSISTOR



Feature


www.DataSheet4U.com DATA SHEET MOS FIE LD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven b y a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = − 10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 3.0 V, ID = −10 A) RDS(on)3.
Manufacture

NEC

Datasheet
Download 2SJ687 Datasheet




 2SJ687
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ687
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.
FEATURES
Low on-state resistance
RDS(on)1 = 7.0 mΩ MAX. (VGS = 4.5 V, ID = 10 A)
RDS(on)2 = 9.0 mΩ MAX. (VGS = 3.0 V, ID = 10 A)
RDS(on)3 = 20 mΩ MAX. (VGS = 2.5 V, ID = 10 A)
2.5 V drive available
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
2SJ687-ZK-E1-AY Note
2SJ687-ZK-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-252 (MP-3ZK)
0.27 g TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
20
m12
m20
m60
36
1.0
150
55 to +150
20
40
Notes 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 10 V, RG = 25 Ω, VGS = 12 0 V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18719EJ2V0DS00 (2nd edition)
Date Published May 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007




 2SJ687
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2SJ687
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
<R>
<R>
Zero Gate Voltage Drain Current
IDSS
Gate Leakage Current
IGSS
Gate to Source Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)1
VDS = 20 V, VGS = 0 V
VGS = m12 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 10 A
RDS(on)2
VGS = 3.0 V, ID = 10 A
RDS(on)3
VGS = 2.5 V, ID = 10 A
Input Capacitance
Ciss VDS = 10 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 10 V, ID = 10 A,
Rise Time
tr VGS = 4.5 V,
Turn-off Delay Time
td(off)
RG = 3 Ω
Fall Time
tf
Total Gate Charge
QG VDD = 16 V,
Gate to Source Charge
QGS VGS = 4.5 V,
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 20 A
IF = 20 A, VGS = 0 V
Reverse Recovery Time
trr IF = 20 A, VGS = 0 V,
Reverse Recovery Charge
Qrr di/dt = 100 A/μs
Note Pulsed
MIN.
0.6
20
TYP.
1.2
5.4
7.1
10.8
4400
1070
760
36
220
270
310
57
12
28
0.85
200
240
MAX.
10
m100
1.45
7.0
9.0
20
1.5
UNIT
μA
nA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG.
VGS = 12 0 V
50 Ω
VDD
IAS BVDSS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS()
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS()
VGS
Wave Form
0 10%
VDS()
90%
VDS
VDS
Wave Form 0
td(on)
VGS
90%
90%
10% 10%
tr td(off)
tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
2 Data Sheet D18719EJ2V0DS




 2SJ687
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2SJ687
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150
Tch - Channel Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
40
35
30
25
20
15
10
5
0
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25 50 75 100 125
TC - Case Temperature - °C
150
-100
ID(pulse)
-10
-1
ID(DC)
RDS(on) Limited
(VGS = 4.5 V)
Power Dissipation Limited
PW = 1 ms
10 ms
-0.1
TC = 25°C
Single Pulse
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/Wi
10
1 Rth(ch-C) = 3.47°C/Wi
0.1
0.01
100 μ
1m
10 m
100 m
1
10
PW - Pulse Width - s
Single Pulse
100 1000
Data Sheet D18719EJ2V0DS
3



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