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PNP TRANSISTOR. A733 Datasheet

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PNP TRANSISTOR. A733 Datasheet
















A733 TRANSISTOR. Datasheet pdf. Equivalent













Part

A733

Description

PNP TRANSISTOR



Feature


www.DataSheet4U.com PNP TRANSISTOR -100 mA A733 AF OUTPUT AMPLIFIER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS¬ °] Ta=25¬ĘJ¬°^ PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION Collector-Emitte r Breakdown Voltage BVceo -50 V Ic=1mA Collector-Base Breakdown Voltage BVcbo -60 V Ic=5uA Emitter-Base Breakdown Vol tage BVebo -5 V Ie=50¬£g A Collector-Ba se Leakage Icbo -0.1 u.
Manufacture

Stanson Technology

Datasheet
Download A733 Datasheet


Stanson Technology A733

A733; A Vcb=-60V Emitter-Base Leakage Iebo -0. 1 uA Veb=-5V Collector-Emitter Saturati on Voltage Vce¬°] sat¬° ^ -0.18 -0.3 V Ic=-100mA, Ib=-10mA DC Current Gain Hfe 90 200 600 Vce=-6.0V,Ic=-1.0mA Collect or Current Ic -100 mA Current Gain Band width fT 100 180 MHz Vce=-6V, Ie=10mA O utput Capacitance Cob 4.5 6.0 pF Vcb=-1 0V,Ie=0,f=1MHz Power Dissipation Pc 0.2 5 W Junction Tempera.


Stanson Technology A733

ture Tj 125 ¬ĘJ Storage Temperature Tstg -55 125 ¬ĘJ Classification of Hfe Ran k Range R 90-180 Q 135-270 P 200-400 K 300-600 STANSON TECHNOLOGY 120 Ben tley Square, Mountain View, Ca 94040 US A TEL: (650) 9389294 FAX: (650) 9389295 .


Stanson Technology A733

.





Part

A733

Description

PNP TRANSISTOR



Feature


www.DataSheet4U.com PNP TRANSISTOR -100 mA A733 AF OUTPUT AMPLIFIER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS¬ °] Ta=25¬ĘJ¬°^ PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION Collector-Emitte r Breakdown Voltage BVceo -50 V Ic=1mA Collector-Base Breakdown Voltage BVcbo -60 V Ic=5uA Emitter-Base Breakdown Vol tage BVebo -5 V Ie=50¬£g A Collector-Ba se Leakage Icbo -0.1 u.
Manufacture

Stanson Technology

Datasheet
Download A733 Datasheet




 A733
www.DataSheet4U.com
PNP TRANSISTOR
-100mA
A733
AF OUTPUT AMPLIFIER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ta=25
PARAMETERS
SYMBOL MIN TYP MAX UNIT
CONDITION
Collector-Emitter Breakdown Voltage BVceo -50
V Ic=1mA
Collector-Base Breakdown Voltage
BVcbo -60
V Ic=5 A
Emitter-Base Breakdown Voltage
BVebo -5
V Ie=50 A
Collector-Base Leakage
Icbo
-0.1 uA
Vcb=-60V
Emitter-Base Leakage
Iebo
-0.1 uA
Veb=-5V
Collector-Emitter Saturation Voltage Vce sat
-0.18 -0.3 V Ic=-100mA, Ib=-10mA
DC Current Gain
Hfe 90 200 600
Vce=-6.0V,Ic=-1.0mA
Collector Current
Ic -100 mA
Current Gain Bandwidth
fT 100 180
MHz Vce=-6V, Ie=10mA
Output Capacitance
Cob 4.5 6.0 pF Vcb=-10V,Ie=0,f=1MHz
Power Dissipation
Pc 0.25 W
Junction Temperature
Tj 125
Storage Temperature
Tstg -55
125
Classification of Hfe
Rank
Range
R
90-180
Q
135-270
P
200-400
K
300-600
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295












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