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Schottky Diodes. BAS70-04-HT3 Datasheet

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Schottky Diodes. BAS70-04-HT3 Datasheet
















BAS70-04-HT3 Diodes. Datasheet pdf. Equivalent













Part

BAS70-04-HT3

Description

Schottky Diodes



Feature


www.DataSheet4U.com VISHAY BAS70-HT3 t o BAS70-06-HT3 Vishay Semiconductors S chottky Diodes Features • These diode s feature very low turn-on voltage and fast switching. • These devices are p rotected by a PN junction guard ring ag ainst excessive voltage, such as electr ostatic discharges. • Space saving Li LiPut package Top view Pin 1 BAS70-HT3 3 BAS70-06-HT3 3 Mech.
Manufacture

Vishay Siliconix

Datasheet
Download BAS70-04-HT3 Datasheet


Vishay Siliconix BAS70-04-HT3

BAS70-04-HT3; anical Data Case: LLP75-3B Plastic Packa ge Molding Compound Flammability Rating : UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 °C/10 sec. at terminals Weight: 5 mg 1 2 Top View 1 2 BAS70-05-HT3 3 BAS70-04-HT3 3 T op View 1 17007 2 1 2 Parts Table P art BAS70-HT3 BAS70-04-HT3 BAS70-05-HT3 BAS70-06-HT3 Ordering code BAS70-HT3-G S08 BAS70-04-HT3-GS.


Vishay Siliconix BAS70-04-HT3

08 BAS70-05-HT3-GS08 BAS70-06-HT3-GS08 7 3 74 75 76 Marking Remarks Tape and Ree l Tape and Reel Tape and Reel Tape and Reel Absolute Maximum Ratings Tamb = 2 5 °C, unless otherwise specified Param eter Repetitive peak reverse voltage Fo rward continuous current Surge forward current Power dissipation Tamb = 25 °C tp < 1 s, Tamb = 25 °C Tamb = 25 °C Test condition Symbol .


Vishay Siliconix BAS70-04-HT3

VRRM IF IFSM Ptot Value 70 200 600 200 U nit V mA mA mW Thermal Characteristics Tamb = 25 °C, unless otherwise specif ied Parameter Thermal resistance juncti on to ambient air Junction temperature Storage temperature range Test conditio n Symbol RθJA Tj TS Value 430 125 - 55 to +125 Unit °C °C °C Document Num ber 85689 Rev. 3, 02-Jun-03 www.vishay .com 1 BAS70-HT3 to BA.





Part

BAS70-04-HT3

Description

Schottky Diodes



Feature


www.DataSheet4U.com VISHAY BAS70-HT3 t o BAS70-06-HT3 Vishay Semiconductors S chottky Diodes Features • These diode s feature very low turn-on voltage and fast switching. • These devices are p rotected by a PN junction guard ring ag ainst excessive voltage, such as electr ostatic discharges. • Space saving Li LiPut package Top view Pin 1 BAS70-HT3 3 BAS70-06-HT3 3 Mech.
Manufacture

Vishay Siliconix

Datasheet
Download BAS70-04-HT3 Datasheet




 BAS70-04-HT3
www.DataSheet4U.com
VISHAY
Schottky Diodes
BAS70-HT3 to BAS70-06-HT3
Vishay Semiconductors
Features
• These diodes feature very low turn-on voltage and
fast switching.
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges.
• Space saving LiLiPut package
Mechanical Data
Case: LLP75-3B Plastic Package
Molding Compound Flammability Rating:
UL 94 V-0
Terminals: High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Weight: 5 mg
Top view
BAS70-HT3
3
Pin 1
BAS70-06-HT3
3
Top View
12
BAS70-05-HT3
3
12
Top View
BAS70-04-HT3
3
1
17007
2
12
Parts Table
Part
BAS70-HT3
BAS70-04-HT3
BAS70-05-HT3
BAS70-06-HT3
Ordering code
BAS70-HT3-GS08
BAS70-04-HT3-GS08
BAS70-05-HT3-GS08
BAS70-06-HT3-GS08
Marking
73
74
75
76
Remarks
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Forward continuous current
Surge forward current
Power dissipation
Test condition
Tamb = 25 °C
tp < 1 s, Tamb = 25 °C
Tamb = 25 °C
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
Test condition
Symbol
RθJA
Tj
TS
Symbol
VRRM
IF
IFSM
Ptot
Value
70
200
600
200
Unit
V
mA
mA
mW
Value
430
125
- 55 to +125
Unit
°C
°C
°C
Document Number 85689
Rev. 3, 02-Jun-03
www.vishay.com
1




 BAS70-04-HT3
BAS70-HT3 to BAS70-06-HT3
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage IR = 10 µA (pulsed)
Leakage current
VR = 50 V, tp < 300 µs
Forward voltage
tp < 300 µs, IF = 1.0 mA
tp < 300 µs, IF = 15 mA
Capacitance
VR = 0 V, f = 1 MHz
Reverse recovery time
IF = 10 mA, IR = 10 mA,
Irr = 1 mA, RL = 100
Symbol
V(BR)R
IR
VF
VF
Ctot
trr
Package Dimensions in mm
Min
70
VISHAY
Typ. Max Unit
V
20 100 nA
410 mV
1000
mV
1.5 2 pF
5 ns
18057
www.vishay.com
2
ISO Method E
Document Number 85689
Rev. 3, 02-Jun-03




 BAS70-04-HT3
VISHAY
BAS70-HT3 to BAS70-06-HT3
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85689
Rev. 3, 02-Jun-03
www.vishay.com
3




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