DatasheetsPDF.com

BIPOLAR TRANSISTOR. IRG4PH50UDPBF Datasheet

DatasheetsPDF.com

BIPOLAR TRANSISTOR. IRG4PH50UDPBF Datasheet
















IRG4PH50UDPBF TRANSISTOR. Datasheet pdf. Equivalent













Part

IRG4PH50UDPBF

Description

INSULATED GATE BIPOLAR TRANSISTOR



Feature


www.DataSheet4U.com PD -95190 IRG4PH50 UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fea tures • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mo de • New IGBT design provides tighter parameter distribution and higher effi ciency than previous generations • IG BT co-packaged with HEXF.
Manufacture

International Rectifier

Datasheet
Download IRG4PH50UDPBF Datasheet


International Rectifier IRG4PH50UDPBF

IRG4PH50UDPBF; REDTM ultrafast, ultra-soft-recovery ant i-parallel diodes for use in bridge con figurations • Industry standard TO-24 7AC package • Lead-Free C UltraFast CoPack IGBT VCES = 1200V G E VCE(on) typ. = 2.78V @VGE = 15V, IC = 24A n-ch a nn el Benefits • Higher switching frequency capability than competitive I GBTs • Highest efficiency available HEXFRED diodes optimized .


International Rectifier IRG4PH50UDPBF

for performance with IGBT's . Minimized recovery characteristics require less/n o snubbing TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100 C IFM VGE PD @ TC = 25°C PD @ TC = 10 0°C TJ TSTG Collector-to-Emitter Break down Voltage Continuous Collector Curre nt Continuous Collector Current Pulsed Collector Current Q Cla.


International Rectifier IRG4PH50UDPBF

mped Inductive Load Current R Diode Cont inuous Forward Current Diode Maximum Fo rward Current Gate-to-Emitter Voltage M aximum Power Dissipation Maximum Power Dissipation Operating Junction and Stor age Temperature Range Soldering Tempera ture, for 10 seconds Mounting torque, 6 -32 or M3 screw. Max. 1200 45 24 180 1 80 16 180 ± 20 200 78 -55 to + 150 300 (0.063 in. (1.6mm).





Part

IRG4PH50UDPBF

Description

INSULATED GATE BIPOLAR TRANSISTOR



Feature


www.DataSheet4U.com PD -95190 IRG4PH50 UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fea tures • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mo de • New IGBT design provides tighter parameter distribution and higher effi ciency than previous generations • IG BT co-packaged with HEXF.
Manufacture

International Rectifier

Datasheet
Download IRG4PH50UDPBF Datasheet




 IRG4PH50UDPBF
www.DataSheet4U.com
PD -95190
IRG4PH50UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
• New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
• Lead-Free
G
E
n-channel
VCES = 1200V
VCE(on) typ. = 2.78V
@VGE = 15V, IC = 24A
Benefits
• Higher switching frequency capability than
competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
TO-247AC
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
1200
45
24
180
180
16
180
± 20
200
78
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.64
0.83
–––
40
–––
Units
°C/W
g (oz)
1
04/26/04




 IRG4PH50UDPBF
www.DataSheet4U.com
IRG4PH50UDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown VoltageS
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
1200
3.0
23
1.20
2.56
2.78
3.20
2.54
-13
35
2.5
2.1
—V
— V/°C
3.5
3.7
—V
6.0
— mV/°C
—S
250 µA
6500
3.5 V
3.0
±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 20A
VGE = 15V
IC = 24A
IC = 45A
See Fig. 2, 5
IC = 24A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 24A
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 150°C
IC = 16A
See Fig. 13
IC = 16A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min.
Typ. Max.
160 250
27 40
53 80
47 —
24 —
110 170
180 260
2.10 —
1.50 —
3.60 4.6
46 —
27 —
240 —
330 —
6.38 —
13 —
3600 —
160 —
31 —
90 135
164 245
5.8 10
8.3 15
260 675
680 1838
120 —
76 —
Units
nC
ns
mJ
ns
mJ
nH
pF
ns
A
nC
A/µs
Conditions
IC = 24A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 24A, VCC = 800V
VGE = 15V, RG = 5.0
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
TJ = 150°C, See Fig. 11, 18
IC = 24A, VCC = 800V
VGE = 15V, RG = 5.0
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
TJ = 25°C See Fig.
TJ = 125°C 14
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C
16
TJ = 25°C See Fig.
TJ = 125°C 17
IF = 16A
VR = 200V
di/dt = 200A/µs
www.irf.com




 IRG4PH50UDPBF
www.DataSheet4U.com
30
25
20
S qua re wave:
15 6 0% of rate d
v olta ge
10 I
5 Ideal diodes
0
0.1
IRG4PH50UDPbF
For both:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
P o w e r D is s ip a tio n = 40W
1 10
f, Frequency (KHz)
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
100
TJ = 150 oC
10
TJ = 25 oC
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
100
TJ = 150 oC
10
TJ = 25 oC
VCC = 50V
5µs PULSE WIDTH
1
5 6 7 8 9 10 11 12
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3




Recommended third-party IRG4PH50UDPBF Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)