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Power Transistor. MP4020 Datasheet

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Power Transistor. MP4020 Datasheet
















MP4020 Transistor. Datasheet pdf. Equivalent













Part

MP4020

Description

Power Transistor



Feature


www.DataSheet4U.com TOSHIBA Power Transi stor Module Silicon NPN Epitaxial Type (Fourd Darlington Power tTransistors in One) MP4020 MP4020 High Power Switch ing Applications Hammer Drive, Pulse Mo tor Drive and Inductive Load Switching Industrial Applications Unit: mm • • • • Small package by full m olding (SIP 10 pins) High collector pow er dissipation (4-device ope.
Manufacture

Toshiba Semiconductor

Datasheet
Download MP4020 Datasheet


Toshiba Semiconductor MP4020

MP4020; ration) : PT = 4 W (Ta = 25°C) High col lector current: IC (DC) = 2 A (max) Hig h DC current gain: hFE = 2000 (min) (VC E = 2 V, IC = 1 A) Zener diode included between collector and base Maximum Ra tings (Ta = 25°C) Characteristics Coll ector-base voltage Collector-emitter vo ltage Emitter-base voltage Collector cu rrent Continuous base current Collector power dissipation (.


Toshiba Semiconductor MP4020

1 device operation) Collector power diss ipation (4 devices operation) Junction temperature Storage temperature range D C Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating 50 60 ± 10 8 2 3 0.5 2.0 Un it V V V A A W JEDEC JEITA TOSHIBA ― 2-25A1A Weight: 2.1 g (typ.) PT Tj Tstg 4.0 150 −55 to 150 W °C C Array Configuration 3 4 5 6 7 8 9 2 1 R1 R2 10 R1 ≈ 5 kΩ R2 .


Toshiba Semiconductor MP4020

≈ 300 Ω 1 2004-07-01 www.DataShee t4U.com MP4020 Thermal Characteristic s Characteristics Thermal resistance fr om junction to ambient (4-devices opera tion, Ta = 25°C) Maximum lead temperat ure for soldering purposes (3.2 mm from case for 10 s) TL 260 °C Symbol Max U nit ΣRth (j-a) 31.3 °C/W Electric al Characteristics (Ta = 25°C) Charact eristics Collector cut-off .





Part

MP4020

Description

Power Transistor



Feature


www.DataSheet4U.com TOSHIBA Power Transi stor Module Silicon NPN Epitaxial Type (Fourd Darlington Power tTransistors in One) MP4020 MP4020 High Power Switch ing Applications Hammer Drive, Pulse Mo tor Drive and Inductive Load Switching Industrial Applications Unit: mm • • • • Small package by full m olding (SIP 10 pins) High collector pow er dissipation (4-device ope.
Manufacture

Toshiba Semiconductor

Datasheet
Download MP4020 Datasheet




 MP4020
www.DataSheet4U.com
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type
(Fourd Darlington Power tTransistors in One)
MP4020
MP4020
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching
Industrial Applications
Unit: mm
Small package by full molding (SIP 10 pins)
High collector power dissipation (4-device operation)
: PT = 4 W (Ta = 25°C)
High collector current: IC (DC) = 2 A (max)
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
Zener diode included between collector and base
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Continuous base current
Collector power dissipation
(1 device operation)
Collector power dissipation
(4 devices operation)
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Rating
50
60 ± 10
8
2
3
0.5
2.0
Unit
V
V
V
A
A
W
4.0
150
55 to 150
W
°C
°C
Array Configuration
357
468
2
1
R1 R2
R1 5 kR2 300
9
10
JEDEC
JEITA
TOSHIBA
2-25A1A
Weight: 2.1 g (typ.)
1 2004-07-01




 MP4020
www.DataSheet4U.com
Thermal Characteristics
Characteristics
Thermal resistance from junction to
ambient
(4-devices operation, Ta = 25°C)
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
Symbol Max Unit
ΣRth (j-a)
31.3
°C/W
TL 260 °C
MP4020
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter
Saturation voltage
Base-emitter
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
ICEO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
fT
Cob
VCB = 45 V, IE = 0 A
VCE = 45 V, IB = 0 A
VEB = 8 V, IC = 0 A
IC = 10 mA, IB = 0 A
VCE = 2 V, IC = 1 A
IC = 1 A, IB = 1 mA
IC = 1 A, IB = 1 mA
VCE = 2 V, IC = 0.5 A
VCB = 10 V, IE = 0 A, f = 1 MHz
Min Typ. Max Unit
― ― 10 µA
― ― 10 µA
0.8 4.0 mA
50 60 70
V
2000 ― ― ―
― ― 1.5
V
― ― 2.0
100 MHz
20 pF
Turn-on time
Switching time Storage time
Fall time
ton
Input IB1
Output 0.4
tstg
20 µs
IB2
4.0
µs
VCC = 30 V
tf
IB1 = IB2 = 1 mA, duty cycle 1%
0.6
Marking
MP4020
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2004-07-01




 MP4020
www.DataSheet4U.com
IC – VCE
3 1 0.5
2.4
Common emitter
Ta = 25°C
0.3
0.22
1.6
0.20
0.8
IB = 0.18 mA
0
0
0 2 4 68
Collector-emitter voltage VCE (V)
10000
hFE – IC
5000
3000
1000
Ta = 100°C
25
55
500
300
100
0.03 0.05 0.1
Common emitter
VCE = 2 V
0.3 0.5 1
3 5 10
Collector current IC (A)
MP4020
IC – VBE
Common emitter
VCE = 2 V
2.4
1.6
0.8
Ta = 100°C 25
55
0
0 0.8 1.6 2.4 3.2
Base-emitter voltage VBE (V)
VCE – IB
2.4
Common emitter
Ta = 25°C
2.0
1.6
1.2 1.0
0.5
0.8
0.1
2.5
2.0
1.5
IC = 3.0 A
0.4
0
0.1 0.3
1 3 10 30 100 300 500
Base current IB (mA)
VCE (sat) – IC
10
Common emitter
5 IC/IB = 500
3
Ta = 55°C
1
25
100
0.5
0.3
0.1
0.3 0.5
1
3
Collector current IC (A)
5
10
VBE (sat) – IC
10
Common emitter
5 IC/IB = 500
3
Ta = 55°C
25
1 100
0.5
0.3
0.1
0.3 0.5
1
3
Collector current IC (A)
5
10
3 2004-07-01




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