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Power Transistor. MP4021 Datasheet

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Power Transistor. MP4021 Datasheet
















MP4021 Transistor. Datasheet pdf. Equivalent













Part

MP4021

Description

Power Transistor



Feature


www.DataSheet4U.com TOSHIBA Power Transi stor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in O ne) MP4021 MP4021 High Power Switchin g Applications Hammer Drive, Pulse Moto r Drive and Inductive Load Switching In dustrial Applications Unit: mm • • • • • Small package by full mol ding (SIP 10 pins) High collector power dissipation (4-device opera.
Manufacture

Toshiba Semiconductor

Datasheet
Download MP4021 Datasheet


Toshiba Semiconductor MP4021

MP4021; tion) : PT = 4 W (Ta = 25°C) High colle ctor current: IC (DC) = 2 A (max) High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Zener diode included b etween collector and base. Maximum Rat ings (Ta = 25°C) Characteristics Colle ctor-base voltage Collector-emitter vol tage Emitter-base voltage Collector cur rent Continuous base current Collector power dissipation (1.


Toshiba Semiconductor MP4021

-device operation) Collector power dissi pation (4-device operation) Junction te mperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB P C Rating 85 100 ± 15 8 2 3 0.5 2.0 Uni t V V V A A W JEDEC JEITA TOSHIBA ― ― 2-25A1A Weight: 2.1 g (typ.) PT Tj Tstg 4.0 150 −55 to 150 W °C ° C Array Configuration 3 4 5 6 7 8 9 2 1 R1 R2 10 R1 ≈ 5 kΩ, R2 .


Toshiba Semiconductor MP4021

≈ 300 Ω 1 2004-07-01 www.DataShee t4U.com MP4021 Thermal Characteristic s Characteristics Thermal resistance fr om junction to ambient (4-device operat ion, Ta = 25°C) Maximum lead temperatu re for soldering purposes (3.2 mm from case for 10 s) TL 260 °C Symbol Max Un it ΣRth (j-a) 31.3 °C/W Electrica l Characteristics (Ta = 25°C) Characte ristics Collector cut-off c.





Part

MP4021

Description

Power Transistor



Feature


www.DataSheet4U.com TOSHIBA Power Transi stor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in O ne) MP4021 MP4021 High Power Switchin g Applications Hammer Drive, Pulse Moto r Drive and Inductive Load Switching In dustrial Applications Unit: mm • • • • • Small package by full mol ding (SIP 10 pins) High collector power dissipation (4-device opera.
Manufacture

Toshiba Semiconductor

Datasheet
Download MP4021 Datasheet




 MP4021
www.DataSheet4U.com
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type
(Four Darlington Power Transistors in One)
MP4021
MP4021
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching
Industrial Applications
Unit: mm
Small package by full molding (SIP 10 pins)
High collector power dissipation (4-device operation)
: PT = 4 W (Ta = 25°C)
High collector current: IC (DC) = 2 A (max)
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
Zener diode included between collector and base.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Continuous base current
Collector power dissipation
(1-device operation)
Collector power dissipation
(4-device operation)
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Rating
85
100 ± 15
8
2
3
0.5
2.0
Unit
V
V
V
A
A
W
4.0
150
55 to 150
W
°C
°C
Array Configuration
357
468
2
1
R1 R2
R1 5 k, R2 300
9
10
JEDEC
JEITA
TOSHIBA
2-25A1A
Weight: 2.1 g (typ.)
1 2004-07-01




 MP4021
www.DataSheet4U.com
Thermal Characteristics
Characteristics
Thermal resistance from junction to
ambient
(4-device operation, Ta = 25°C)
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
Symbol Max Unit
ΣRth (j-a)
31.3
°C/W
TL 260 °C
MP4021
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector- emitter breakdown voltage
DC current gain
Collector-emitter
Saturation voltage
Base-emitter
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
ICEO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
fT
Cob
VCB = 80 V, IE = 0 A
VCE = 80 V, IB = 0 A
VEB = 8 V, IC = 0 A
IC = 10 mA, IE = 0 A
VCE = 2 V, IC = 1 A
IC = 1 A, IB = 1 mA
IC = 1 A, IB = 1 mA
VCE = 2 V, IC = 0.5 A
VCB = 10 V, IE = 0 A, f = 1 MHz
Min Typ. Max Unit
― ― 10 µA
― ― 10 µA
0.8 4.0 mA
85 100 115
V
2000 ― ― ―
― ― 1.5
V
― ― 2.0
100 MHz
20 pF
Turn-on time
Switching time Storage time
Fall time
ton
Input IB1
Output
0.45
tstg
20 µs
IB2
2.0
µs
VCC = 30 V
tf
IB1 = IB2 = 1 mA, duty cycle 1%
0.4
Marking
MP4021
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2004-07-01




 MP4021
www.DataSheet4U.com
IC – VCE
4
3
31
Common emitter
Ta = 25°C
0.5
0.5
2 0.3
0.2
1 IB = 0.13 mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
10000
5000
3000
Common emitter
VCE = 2 V
hFE – IC
Ta = 100°C
1000
25
500 55
300
0
0.03 0.05
0.1
0.3 0.5
1
Collector current IC (A)
35
MP4021
IC – VBE
4
Common emitter
VCE = 2 V
3
2
1
Ta = 100°C
25
55
0
0 0.8 1.6 2.4 3.2
Base-emitter voltage VBE (V)
4.0
VCE – IB
3.0
Common emitter
2.5 Ta = 25°C
2.0
1.5
0.5
1.0
2.5
1.5 2.0
1.0
0.1
0.5
IC = 3.0 A
0
0.03 0.1 0.3
1
3 10 30 100 300 1000
Base current IB (mA)
VCE (sat) – IC
10
Common emitter
5 IC/IB = 500
3
Ta = 55°C
1
25
100
0.5
0.3
0.1
0.3 0.5
1
3
Collector current IC (A)
5
10
VBE (sat) – IC
10
Common emitter
5 IC/IB = 500
3
Ta = 55°C
25
1 100
0.5
0.3
0.1
0.3 0.5
1
3
Collector current IC (A)
5
10
3 2004-07-01




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