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Power Transistor. MP4025 Datasheet

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Power Transistor. MP4025 Datasheet
















MP4025 Transistor. Datasheet pdf. Equivalent













Part

MP4025

Description

Power Transistor



Feature


www.DataSheet4U.com MP4025 TOSHIBA Powe r Transistor Module Silicon NPN Epitaxi al Type (darlington power transistor 4 in 1) MP4025 High Power Switching Appl ications Hammer Drive, Pulse Motor Driv e and Inductive Load Switching · · · · · Small package by full molding (S IP 10 pin) Built-in resistance (RB). Su rge voltage is clamped by zener diode ( C-B). Low VCE (sat): VC.
Manufacture

Toshiba Semiconductor

Datasheet
Download MP4025 Datasheet


Toshiba Semiconductor MP4025

MP4025; E (sat) = 1.2 V (max) (IC = 0.5 A, VBH = 4.2 V) High DC current gain: hFE = 200 0 (min) (VCE = 2 V, IC = 0.7 A) Maximu m Ratings (Ta = 25°C) Characteristic C ollector-base voltage Collector-emitter voltage Emitter-base voltage Input vol tage DC Collector current Pulse Collect or power dissipation (1 device operatio n) Collector power dissipation (4 devic es operation) Junct.


Toshiba Semiconductor MP4025

ion temperature Storage temperature rang e Symbol VCBO VCEO VEBO VB IC ICP PC PT Tj Tstg Rating 50 60 ± 10 6 20 1.5 A 2.0 2.0 4.0 150 -55~150 W W °C °C Uni t V V V V Array Configuration 2 RB 3 4 5 6 7 8 9 1 R1 R2 RB » 3.6 kW, R1 » 5 kW, R2 » 300 W 10 000707EAA2 · TOSHIBA is continually working to impro ve the quality and reliability of its p roducts. Nevertheless, se.


Toshiba Semiconductor MP4025

miconductor devices in general can malfu nction or fail due to their inherent el ectrical sensitivity and vulnerability to physical stress. It is the responsib ility of the buyer, when utilizing TOSH IBA products, to comply with the standa rds of safety in making a safe design f or the entire system, and to avoid situ ations in which a malfunction or failur e of such TOSHIBA .





Part

MP4025

Description

Power Transistor



Feature


www.DataSheet4U.com MP4025 TOSHIBA Powe r Transistor Module Silicon NPN Epitaxi al Type (darlington power transistor 4 in 1) MP4025 High Power Switching Appl ications Hammer Drive, Pulse Motor Driv e and Inductive Load Switching · · · · · Small package by full molding (S IP 10 pin) Built-in resistance (RB). Su rge voltage is clamped by zener diode ( C-B). Low VCE (sat): VC.
Manufacture

Toshiba Semiconductor

Datasheet
Download MP4025 Datasheet




 MP4025
www.DataSheet4U.com
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type
(darlington power transistor 4 in 1)
MP4025
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive
Load Switching
· Small package by full molding (SIP 10 pin)
· Built-in resistance (RB).
· Surge voltage is clamped by zener diode (C-B).
· Low VCE (sat): VCE (sat) = 1.2 V (max) (IC = 0.5 A, VBH = 4.2 V)
· High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 0.7 A)
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Input voltage
Collector current
DC
Pulse
Collector power dissipation
(1 device operation)
Collector power dissipation
(4 devices operation)
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
VB
IC
ICP
PC
PT
Tj
Tstg
Rating
50
60 ± 10
6
20
1.5
2.0
2.0
4.0
150
-55~150
Unit
V
V
V
V
A
W
W
°C
°C
Array Configuration
2
RB
34
56
78
9
MP4025
1
R1 R2
RB » 3.6 kW, R1 » 5 kW, R2 » 300 W
10
000707EAA2
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
2000-08-21 1/2




 MP4025
www.DataSheet4U.com
Thermal Characteristics
MP4025
Characteristic
Thermal resistance of junction to ambient (4 devices operation, Ta = 25°C)
Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s)
Symbol
SRth (j-a)
TL
Max
31.3
260
Unit
°C/W
°C
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Resistance
DC current gain
Collector-emitter saturation voltage
Input voltage (low)
Symbol
Test Condition
ICBO
ICEO
IEBO
V (BR) CEO
RB
hFE
VCE (sat) (1)
VCE (sat) (2)
VBL
VCB = 45 V, IE = 0
VCE = 45 V, IB = 0
VEB = 6 V, IC = 0
IC = 10 mA, IB = 0
¾
VCE = 2 V, IC = 0.7 A
IC = 0.5 A, VBH = 4.2 V
IC = 0.7 A, VBH = 9 V
VCE = 30 V, IC = 100 mA
Turn-on time
Switching time Storage time
Fall time
ton
Input
20 ms
tstg
0
VBH = 5 V
VCC ~- 24 V
tf Duty cycle <= 1%
Min Typ. Max Unit
¾ ¾ 10 mA
¾ ¾ 10 mA
0.46 ¾ 1.25 mA
50 60 70
V
2.5 3.6 4.7 kW
2000 ¾ ¾ ¾
¾ ¾ 1.2
V
¾ ¾ 1.5
¾ ¾ 0.7 V
¾ 0.3 ¾
¾ 4.0 ¾ ms
¾ 0.6 ¾
000707EAA2
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
· The information contained herein is subject to change without notice.
2000-08-21 2/2








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