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POWER MOSFET. 2SK3812 Datasheet

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POWER MOSFET. 2SK3812 Datasheet
















2SK3812 MOSFET. Datasheet pdf. Equivalent













Part

2SK3812

Description

SWITCHING N-CHANNEL POWER MOSFET



Feature


DATA SHEET www.DataSheet4U.com MOS FIEL D EFFECT TRANSISTOR 2SK3812 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION T he 2SK3812 is N-channel MOS Field Effec t Transistor designed for high current switching applications. ORDERING INFOR MATION PART NUMBER 2SK3812-ZP PACKAGE T O-263 (MP-25ZP) FEATURES • Super low on-state resistance RDS(on)1 = 2.8 m MAX. (VGS = 10 V, ID.
Manufacture

NEC

Datasheet
Download 2SK3812 Datasheet


NEC 2SK3812

2SK3812; = 55 A) RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A) • High current rat ing: ID(DC) = ±110 A ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source V oltage (VGS = 0 V) Gate to Source Volta ge (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 (T O-263) 60 ±20 ±110 ±440 213 1.5 150 −55 to +150 397 63 397 V V A A W W ° C °C mJ A mJ VDSS VGSS ID(DC) .


NEC 2SK3812

ID(pulse) PT1 PT2 Tch Tstg Total Power Dissipation (TC = 25°C) Total Power Di ssipation (TA = 25°C) Channel Temperat ure Storage Temperature Single Avalanch e Energy Note2 Note3 Note3 EAS IAR EAR Repetitive Avalanche Current Repetiti ve Avalanche Energy Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH 3. Tc.


NEC 2SK3812

h(peak) ≤ 150°C, RG = 25 Ω The inf ormation in this document is subject to change without notice. Before using th is document, please confirm that this i s the latest version. Not all products and/or types are available in every co untry. Please check with an NEC Electro nics sales representative for availabil ity and additional information. Documen t No. D16738EJ1V0DS00 (.





Part

2SK3812

Description

SWITCHING N-CHANNEL POWER MOSFET



Feature


DATA SHEET www.DataSheet4U.com MOS FIEL D EFFECT TRANSISTOR 2SK3812 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION T he 2SK3812 is N-channel MOS Field Effec t Transistor designed for high current switching applications. ORDERING INFOR MATION PART NUMBER 2SK3812-ZP PACKAGE T O-263 (MP-25ZP) FEATURES • Super low on-state resistance RDS(on)1 = 2.8 m MAX. (VGS = 10 V, ID.
Manufacture

NEC

Datasheet
Download 2SK3812 Datasheet




 2SK3812
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3812
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3812 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance
RDS(on)1 = 2.8 mMAX. (VGS = 10 V, ID = 55 A)
RDS(on)2 = 3.7 mMAX. (VGS = 4.5 V, ID = 55 A)
High current rating: ID(DC) = ±110 A
ORDERING INFORMATION
PART NUMBER
2SK3812-ZP
PACKAGE
TO-263 (MP-25ZP)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±110
±440
Total Power Dissipation (TC = 25°C)
PT1
213
Total Power Dissipation (TA = 25°C)
PT2
1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
Tstg 55 to +150
EAS 397
IAR 63
EAR 397
V
V
A
A
W
W
°C
°C
mJ
A
mJ
(TO-263)
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 0 V, L = 100 µH
3. Tch(peak) 150°C, RG = 25
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16738EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004




 2SK3812
2SK3812
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 60 V, VGS = 0 V
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
IGSS
VGS(off)
| yfs |
RDS(on)1
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 55 A
VGS = 10 V, ID = 55 A
RDS(on)2 VGS = 4.5 V, ID = 55 A
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 55 A
Rise Time
tr VGS = 10 V
Turn-off Delay Time
Fall Time
Total Gate Charge
td(off)
tf
QG
RG = 0
VDD = 48 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
Body Diode Forward Voltage Note
Reverse Recovery Time
QGD
VF(S-D)
trr
ID = 110 A
IF = 110 A, VGS = 0 V
IF = 110 A, VGS = 0 V
Reverse Recovery Charge
Note Pulsed
Qrr di/dt = 100 A/µs
MIN.
1.5
50
TYP.
2.0
110
2.3
2.6
16800
1600
1000
42
160
140
15
250
41
66
0.87
53
74
MAX.
10
±100
2.5
2.8
3.7
1.5
UNIT
µA
nA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D16738EJ1V0DS




 2SK3812
2SK3812
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
RDS(on) Limited
(at VGS = 10 V)
ID(DC)
ID(pulse)
Power Dissipation Limited
PW =100 µs
1 ms
10
10 ms
1
TC = 25°C
Single pulse
0.1
0.1
1
10
VDS - Drain to Source Voltage - V
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
250
200
150
100
50
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 83.3°C/W
10
1
Rth(ch-C) = 0.587°C/W
0.1
0.01
Single pulse
0.001
100 µ
1m
10 m
100 m
1
PW - Pulse Width - s
10
100 1000
Data Sheet D16738EJ1V0DS
3




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