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POWER MOSFET. 2SK3813 Datasheet

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POWER MOSFET. 2SK3813 Datasheet
















2SK3813 MOSFET. Datasheet pdf. Equivalent













Part

2SK3813

Description

SWITCHING N-CHANNEL POWER MOSFET



Feature


DATA SHEET www.DataSheet4U.com MOS FIEL D EFFECT TRANSISTOR 2SK3813 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION T he 2SK3813 is N-channel MOS Field Effec t Transistor designed for high current switching applications. ORDERING INFOR MATION PART NUMBER 2SK3813 2SK3813-Z PA CKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEA TURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ M.
Manufacture

NEC

Datasheet
Download 2SK3813 Datasheet


NEC 2SK3813

2SK3813; AX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7 .1 mΩ MAX. (VGS = 4.5 V, ID = 30 A) Low C iss: C iss = 5500 pF TYP. (TO- 251) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V ) Gate to Source Voltage (VDS = 0 V) Dr ain Current (DC) (TC = 25°C) Drain Cur rent (pulse) Note1 VDSS VGSS ID(DC) ID (pulse) PT1 PT2 Tch Tstg 40 ±20 ±60 ±240 84 1.0 150 −55 to +15.


NEC 2SK3813

0 137 37 137 V V A A W W °C °C mJ A m J (TO-252) Total Power Dissipation (T C = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Te mperature Single Avalanche Energy Note2 Note3 Note3 EAS IAR EAR Repetitive A valanche Current Repetitive Avalanche E nergy Notes 1. PW ≤ 10 µs, Duty Cyc le ≤ 1% 2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 .


NEC 2SK3813

→ 0 V, L = 100 µH 3. Tch(peak) ≤ 15 0°C, RG = 25 Ω The information in t his document is subject to change witho ut notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales re presentative for availability and addit ional information. Documen.





Part

2SK3813

Description

SWITCHING N-CHANNEL POWER MOSFET



Feature


DATA SHEET www.DataSheet4U.com MOS FIEL D EFFECT TRANSISTOR 2SK3813 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION T he 2SK3813 is N-channel MOS Field Effec t Transistor designed for high current switching applications. ORDERING INFOR MATION PART NUMBER 2SK3813 2SK3813-Z PA CKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEA TURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ M.
Manufacture

NEC

Datasheet
Download 2SK3813 Datasheet




 2SK3813
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3813
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3813 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance
RDS(on)1 = 5.3 mMAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 7.1 mMAX. (VGS = 4.5 V, ID = 30 A)
Low Ciss: Ciss = 5500 pF TYP.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3813
TO-251 (MP-3)
2SK3813-Z
TO-252 (MP-3Z)
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±60
±240
Total Power Dissipation (TC = 25°C)
PT1
84
Total Power Dissipation (TA = 25°C)
PT2
1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
Tstg 55 to +150
EAS 137
IAR 37
EAR 137
V
V
A
A
W
W
°C
°C
mJ
A
mJ
(TO-252)
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 , VGS = 20 0 V, L = 100 µH
3. Tch(peak) 150°C, RG = 25
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16739EJ2V0DS00 (2nd edition)
Date Published September 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2004




 2SK3813
2SK3813
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 40 V, VGS = 0 V
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
IGSS
VGS(off)
| yfs |
RDS(on)1
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A
RDS(on)2 VGS = 4.5 V, ID = 30 A
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 30 A
Rise Time
tr VGS = 10 V
Turn-off Delay Time
Fall Time
Total Gate Charge
td(off)
tf
QG
RG = 0
VDD = 32 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
Body Diode Forward Voltage Note
Reverse Recovery Time
QGD
VF(S-D)
trr
ID = 60 A
IF = 60 A, VGS = 0 V
IF = 60 A, VGS = 0 V
Reverse Recovery Charge
Note Pulsed
Qrr di/dt = 100 A/µs
MIN.
1.5
21
TYP.
2.0
42
4.2
5.3
5500
740
490
25
8.5
81
10
96
18
23.5
0.94
35
31
MAX.
10
±100
2.5
5.3
7.1
1.5
UNIT
µA
nA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D16739EJ2V0DS




 2SK3813
2SK3813
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
RDS(on) Limited
(at VGS = 10 V)
ID(pulse) = 240 A
100
ID(DC) = 60 A
100 µs
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
10 Power Dissipation Limited
TC = 25°C
Single pulse
1
0.1
1
10 ms
10
1 ms
100
VDS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/W
10
Rth(ch-C) = 1.49°C/W
1
0.1
0.01
100 µ
1m
10 m
100 m
1
PW - Pulse Width - s
10
Single pulse
100 1000
Data Sheet D16739EJ2V0DS
3




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