DatasheetsPDF.com

POWER MOSFET. 2SK3814 Datasheet

DatasheetsPDF.com

POWER MOSFET. 2SK3814 Datasheet
















2SK3814 MOSFET. Datasheet pdf. Equivalent













Part

2SK3814

Description

SWITCHING N-CHANNEL POWER MOSFET



Feature


DATA SHEET www.DataSheet4U.com MOS FIEL D EFFECT TRANSISTOR 2SK3814 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION T he 2SK3814 is N-channel MOS Field Effec t Transistor designed for high current switching applications. ORDERING INFOR MATION PART NUMBER 2SK3814 2SK3814-Z PA CKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEA TURES • Super low on-state resistance RDS(on)1 = 8.7 mΩ M.
Manufacture

NEC

Datasheet
Download 2SK3814 Datasheet


NEC 2SK3814

2SK3814; AX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 1 0.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low C iss: C iss = 5450 pF TYP. (TO -251) ABSOLUTE MAXIMUM RATINGS (TA = 2 5°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) D rain Current (DC) (TC = 25°C) Drain Cu rrent (pulse) Note1 VDSS VGSS ID(DC) I D(pulse) PT1 PT2 Tch Tstg 60 ±20 ±60 ±240 84 1.0 150 −55 to +1.


NEC 2SK3814

50 102 32 102 V V A A W W °C °C mJ A mJ (TO-252) Total Power Dissipation ( TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage T emperature Single Avalanche Energy Note 2 Note3 Note3 EAS IAR EAR Repetitive Avalanche Current Repetitive Avalanche Energy Notes 1. PW ≤ 10 µs, Duty Cy cle ≤ 1% 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20.


NEC 2SK3814

→ 0 V, L = 100 µH 3. Tch(peak) ≤ 1 50°C, RG = 25 Ω The information in this document is subject to change with out notice. Before using this document, please confirm that this is the latest version. Not all products and/or type s are available in every country. Pleas e check with an NEC Electronics sales r epresentative for availability and addi tional information. Docume.





Part

2SK3814

Description

SWITCHING N-CHANNEL POWER MOSFET



Feature


DATA SHEET www.DataSheet4U.com MOS FIEL D EFFECT TRANSISTOR 2SK3814 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION T he 2SK3814 is N-channel MOS Field Effec t Transistor designed for high current switching applications. ORDERING INFOR MATION PART NUMBER 2SK3814 2SK3814-Z PA CKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEA TURES • Super low on-state resistance RDS(on)1 = 8.7 mΩ M.
Manufacture

NEC

Datasheet
Download 2SK3814 Datasheet




 2SK3814
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3814
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3814 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance
RDS(on)1 = 8.7 mMAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 10.5 mMAX. (VGS = 4.5 V, ID = 30 A)
Low Ciss: Ciss = 5450 pF TYP.
ORDERING INFORMATION
PART NUMBER
2SK3814
2SK3814-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±60
±240
Total Power Dissipation (TC = 25°C)
PT1
84
Total Power Dissipation (TA = 25°C)
PT2
1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
Tstg 55 to +150
EAS 102
IAR 32
EAR 102
V
V
A
A
W
W
°C
°C
mJ
A
mJ
(TO-252)
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 0 V, L = 100 µH
3. Tch(peak) 150°C, RG = 25
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16740EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004




 2SK3814
2SK3814
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 60 V, VGS = 0 V
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
IGSS
VGS(off)
| yfs |
RDS(on)1
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A
RDS(on)2 VGS = 4.5 V, ID = 30 A
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 30 A
Rise Time
tr VGS = 10 V
Turn-off Delay Time
Fall Time
Total Gate Charge
td(off)
tf
QG
RG = 0
VDD = 48 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
Body Diode Forward Voltage Note
Reverse Recovery Time
QGD
VF(S-D)
trr
ID = 60 A
IF = 60 A, VGS = 0 V
IF = 60 A, VGS = 0 V
Reverse Recovery Charge
Note Pulsed
Qrr di/dt = 100 A/µs
MIN.
1.5
22
TYP.
2.0
44
7.0
7.9
5450
550
350
23
8.5
85
7.7
95
17
26
0.95
36
40
MAX.
10
±100
2.5
8.7
10.5
1.5
UNIT
µA
nA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D16740EJ1V0DS




 2SK3814
2SK3814
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
RDS(on) Limited
(at VGS = 10 V)
ID(pulse) = 240 A
100 µs
ID(DC) = 60 A
10
Power Dissipation Limited
10 ms
1 ms
TC = 25°C
Single pulse
1
0.1
1
DC
10
VDS - Drain to Source Voltage - V
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/W
10
Rth(ch-C) = 1.49°C/W
1
0.1
0.01
100 µ
1m
10 m
100 m
1
PW - Pulse Width - s
10
Single pulse
100 1000
Data Sheet D16740EJ1V0DS
3




Recommended third-party 2SK3814 Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)