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NPN Transistors. 2SD1616A Datasheet

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NPN Transistors. 2SD1616A Datasheet
















2SD1616A Transistors. Datasheet pdf. Equivalent













Part

2SD1616A

Description

NPN Transistors



Feature


www.DataSheet4U.com 2SD1616 2SD1616A NP N Transistors TO-92 1. EMITTER 2. COLL ECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMU M RATINGS (Ta=25 C) Rating Collector-Em itter Voltage Collector-Base Voltage Em itter-Base Voltage Collector Current To tal Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbo l VCEO VCBO VEBO IC PD Tj Tstg 2SD16116 50 60 6.0 1.0 0.7.
Manufacture

Weitron Technology

Datasheet
Download 2SD1616A Datasheet


Weitron Technology 2SD1616A

2SD1616A; 5 150 -55 to +150 2SD1616A 60 120 Unit V dc Vdc Vdc Adc W C C ELECTRICAL CHARAC TERISTICS Characteristics Collector-Emi tter Breakdown Voltage (IC= 2.0 mAdc, I B=0) Collector-Base Breakdown Voltage ( IC= 10 uAdc, IE=0) Emitter-Base Breakdo wn Voltage (IE= 10 uAdc, IC=0) Collecto r Cutoff Current (VCB=60 Vdc, IE=0) Emi tter Cutoff Current (VEB= 6.0 Vdc, I C= 0) 2SD1616 2SD1616.


Weitron Technology 2SD1616A

A 2SD1616 2SD1616A Symbol V(BR)CEO V(BR) CBO V(BR)EBO ICBO IEBO Min 50 60 60 120 6.0 Max 0.1 0.1 Unit Vdc Vdc Vdc uAdc uAdc WEITRON http://www.weitron.com.tw www.DataSheet4U.com 2SD1616 2SD1616A ELECTRICAL CHARACTERISTICS (TA=25 C un less otherwise noted) (Countinued) Char acteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC=10 0 mAdc, VCE=2.0 Vd.


Weitron Technology 2SD1616A

c) DC Current Gain (IC=1.0 mAdc, VCE= 2. 0 Vdc) Collector-Emitter Saturation Vol tage (1) (IC= 1.0 mAdc, IB= 50 mAdc) Ba se-Emitter Saturation Voltage (1) (IC= 1.0 mAdc, IB= 50 mAdc) Base-Emitter on Voltage (1) (I C =50mA, VCE =2.0V) Curr ent-Gain-Bandwidth Product (IC= 100 mAd c, VCE=2.0 Vdc, f=30MHz) Output Capacit ance (VCB=10V, I E =0V, f= 1MHZ) Cob hF E (1) hFE (2) VCE(.





Part

2SD1616A

Description

NPN Transistors



Feature


www.DataSheet4U.com 2SD1616 2SD1616A NP N Transistors TO-92 1. EMITTER 2. COLL ECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMU M RATINGS (Ta=25 C) Rating Collector-Em itter Voltage Collector-Base Voltage Em itter-Base Voltage Collector Current To tal Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbo l VCEO VCBO VEBO IC PD Tj Tstg 2SD16116 50 60 6.0 1.0 0.7.
Manufacture

Weitron Technology

Datasheet
Download 2SD1616A Datasheet




 2SD1616A
www.DataSheet4U.com
NPN Transistors
2SD1616
2SD1616A
TO-92
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation TA=25 C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj
Tstg
1. EMITTER
2. COLLECTOR
3. BASE
1
2
3
2SD16116
50
60
6.0
1.0
0.75
150
2SD1616A
60
120
-55 to +150
Unit
Vdc
Vdc
Vdc
Adc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= 2.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 10 uAdc, IE=0)
2SD1616
2SD1616A
2SD1616
2SD1616A
Emitter-Base Breakdown Voltage (IE= 10 uAdc, IC=0)
Collector Cutoff Current (VCB=60 Vdc, IE=0)
Emitter Cutoff Current (VEB= 6.0 Vdc, IC=0)
Symbol Min Max Unit
V(BR)CEO
50
60
-
Vdc
V(BR)CBO
60
120
-
Vdc
V(BR)EBO
6.0
-
Vdc
ICBO
IEBO
- 0.1 uAdc
- 0.1 uAdc
WEITRON
http://www.weitron.com.tw




 2SD1616A
www.DataSheet4U.com
2SD1616
2SD1616A
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol Min TYP
Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC=100 mAdc, VCE=2.0 Vdc)
DC Current Gain
(IC=1.0 mAdc, VCE= 2.0 Vdc)
Collector-Emitter Saturation Voltage(1)
(IC= 1.0 mAdc, IB= 50 mAdc)
Base-Emitter Saturation Voltage (1)
(IC= 1.0 mAdc, IB= 50 mAdc)
Base-Emitter on Voltage (1)
(IC =50mA, VCE=2.0V)
Current-Gain-Bandwidth Product
(IC= 100 mAdc, VCE=2.0 Vdc, f=30MHz)
Output Capacitance
(VCB=10V, IE=0V, f= 1MHZ)
hFE(1)
hFE (2)
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
135 -
600
81 -
-
- 0.15 0.3
- 0.9 1.2
- 0.64 0.7
100 160
-
- - 25
-
-
Vdc
Vdc
Vdc
MHz
PF
SWITCHING CHARACTERISTICS
Turn-On Time
Storage Time
Fall Time
Vcc =10V, Ic =100 mA
IB1=-IB2=10 mA
VBE(OFF) =2-3V
ton - 0.07 -
ts - 0.95 - us
t f - 0.07 -
Note:
1. Pulse Test: Pulse Width 350 us, Duty Cycle 2%.
Classification of hFE(1)
Rank
Range
L
135-270
K
200-400
U
300-600
WEITRON
http://www.weitron.com.tw




 2SD1616A
www.DataSheet4U.com
2SD1616
2SD1616A
Typcial Characteristics
WEITRON
http://www.weitron.com.tw




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