DatasheetsPDF.com

Speed NOVRAM. 20CZ16 Datasheet

DatasheetsPDF.com

Speed NOVRAM. 20CZ16 Datasheet
















20CZ16 NOVRAM. Datasheet pdf. Equivalent













Part

20CZ16

Description

High Speed NOVRAM



Feature


www.DataSheet4U.com APPLICATION NOTE A V A I LABLE AN56 High Speed NOVRAM FEA TURES • Fast access time: 35ns • Hi gh reliability —Endurance: 105 nonvol atile store operations —Retention: 10 years minimum • Power-on recall —E EPROM data automatically recalled into RAM upon power-up • Low power CMOS Standby: 1mA • Infinite EEPROM arra y recall, and RAM read and write cycle.
Manufacture

Xicor

Datasheet
Download 20CZ16 Datasheet


Xicor 20CZ16

20CZ16; s • Hardware store initiation (store c ycle time < 10ms) • Available in the 32-lead plastic leadless chip carrier p ackage DESCRIPTION X20CZ16 The Xicor X 20CZ16 is a 2K x 8 NOVRAM featuring a h igh-speed static RAM overlaid bit-for-b it with a nonvolatile electrically eras able PROM (EEPROM). The X20CZ16 is fabr icated with advanced CMOS floating gat e technology to achieve .


Xicor 20CZ16

high speed with low power and wide power -supply margin. The NOVRAM design allow s data to be easily transferred from RA M to EEPROM (store) and EEPROM to RAM ( recall). The store operation is complet ed in 10ms or less and the recall opera tion is completed in 20µs or less. An automatic array recall operation reload s the contents of the EEPROM into RAM u pon power-up. Xicor.


Xicor 20CZ16

NOVRAMS are designed for unlimited writ e operations to RAM, either from the ho st or recalls from EEPROM, and a minimu m 100,000 store operations to the EEPRO M. Data retention is specified to be g reater than 10 years. FUNCTIONAL DIAGR AM A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 e t e P EEPROM Array O R ro E EC AL L du Store/ Recall Control Address Deco der ol SRAM Array .





Part

20CZ16

Description

High Speed NOVRAM



Feature


www.DataSheet4U.com APPLICATION NOTE A V A I LABLE AN56 High Speed NOVRAM FEA TURES • Fast access time: 35ns • Hi gh reliability —Endurance: 105 nonvol atile store operations —Retention: 10 years minimum • Power-on recall —E EPROM data automatically recalled into RAM upon power-up • Low power CMOS Standby: 1mA • Infinite EEPROM arra y recall, and RAM read and write cycle.
Manufacture

Xicor

Datasheet
Download 20CZ16 Datasheet




 20CZ16
www.DataSheet4U.com
APPLICATION NOTE
A V A I LABLE
AN56
High Speed NOVRAM
X20CZ16
FEATURES
• Fast access time: 35ns
• High reliability
—Endurance: 105 nonvolatile store operations
—Retention: 10 years minimum
• Power-on recall
—EEPROM data automatically recalled into RAM
upon power-up
• Low power CMOS
—Standby: 1mA
• Infinite EEPROM array recall, and RAM read and
write cycles
• Hardware store initiation (store cycle time < 10ms)
• Available in the 32-lead plastic leadless chip
carrier package
DESCRIPTION
The Xicor X20CZ16 is a 2K x 8 NOVRAM featuring a
high-speed static RAM overlaid bit-for-bit with a non-
volatile electrically erasable PROM (EEPROM). The
X20CZ16 is fabricated with advanced CMOS floating
gate technology to achieve high speed with low power
and wide power-supply margin.
The NOVRAM design allows data to be easily trans-
ferred from RAM to EEPROM (store) and EEPROM to
RAM (recall). The store operation is completed in
10ms or less and the recall operation is completed in
20µs or less. An automatic array recall operation
reloads the contents of the EEPROM into RAM upon
power-up.
Xicor NOVRAMS are designed for unlimited write
operations to RAM, either from the host or recalls from
EEPROM, and a minimum 100,000 store operations to
the EEPROM. Data retention is specified to be greater
than 10 years.
FUNCTIONAL DIAGRAM
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
EEPROM
Array
SRAM
Array
VCC
VSS
DQ0
DQ1 Data I/O Store/
DQ2
Recall
Control
VCC
DQ3
DQ4
DQ5
DQ6 OE
DQ7 NE
Read/Write/
Store Logic
CE
WE
REV 1.4.2 10/3/03
www.xicor.com
Characteristics subject to change without notice. 1 of 14




 20CZ16
www.DataSheet4U.com
X20CZ16
PIN CONFIGURATION
PLCC
4 3 2 1 32 31 30
A6 5
A5 6
A4 7
29 A8
28 A9
27 NC
A3 8
A2 9
A1 10
X20CZ16
(TOP VIEW)
26 NC
25 OE
24 A10
A0 11
23 CE
NC 12
22 I/O7
I/O0
13 21
14 15 16 17 18 19 20
I/O6
ORDERING INFORMATION
Part Number
X20CE16JI-35
Access Time
-35 = 35 ns
Temperature Range
-40°C to 85°C
Package
J = 32-Lead PLCC
PIN DESCRIPTIONS
PLCC
11, 10, 9, 8, 7, 6, 5, 4, 29, 28, 24
13, 14, 15, 18, 19, 20, 21, 22
31
23
25
2
32
16
1, 3, 12, 17, 26, 27, 30
Symbol
A0–A10
I/O0–I/O7
WE
CE
OE
NE
VCC
VSS
NC
Address inputs
Data input/output
Write enable
Chip enable
Output enable
Nonvolatile enable
+5V
Ground
No connect
Description
REV 1.4.2 10/3/03
www.xicor.com
Characteristics subject to change without notice. 2 of 14




 20CZ16
www.DataSheet4U.com
X20CZ16
ABSOLUTE MAXIMUM RATINGS*
Temperature under bias ................... –65°C to +135°C
Storage temperature ....................... –65°C to +150°C
Voltage on any pin with
respect to VSS .......................... –0.3V to VCC + 0.5V
D.C. output current ............................................. 10mA
Lead temperature (soldering, 10 seconds)........ 300°C
Power Supply Voltage (VCC to VSS) .....-0.5V to +7.0V
RECOMMENDED OPERATING CONDITIONS
Temperature
Industrial
Min.
–40°C
Max.
+85°C
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and the functional operation of
the device at these or any conditions other than those
indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating con-
ditions for extended periods may affect device reliability.
Supply Voltage
X20CZ16
Limits
5V ±10%
D.C. OPERATING CHARACTERISTICS (Over recommended operating conditions unless otherwise specified.)
Symbol
Parameter
lCC1
VCC current (active)
Min.
Limits
Max.
100
ICC2
ISB1
ISB2
ILI
ILO
VIL(1)
VIH(1)
VOL
VOH
VCC current during store
7
VCC standby current (TTL input)
27
VCC standby current (CMOS input)
1
Input leakage current
Output leakage current
Input LOW voltage
Input HIGH voltage
Output LOW voltage
Output HIGH voltage
–0.3
2.2
2.4
10
10
0.8
VCC + 0.3
0.4
Unit
mA
mA
mA
mA
µA
µA
V
V
V
V
Test Conditions
NE = WE = VIH, CE = OE = VIL
Address inputs = 0.4V/2.4V levels
@ f = 20MHz All I/Os = open
All inputs = VIH
All I/Os = open
CE = VIH, All other inputs = VIH
All I/Os = open
All inputs = VCC – 0.3V
All I/Os = open
VIN = VSS to VCC
VOUT = VSS to VCC, CE = VIH
IOL = 4mA
IOH = –4mA
CAPACITANCE TA = +25°C, f = 1MHz, VCC = 5V
Symbol
CI/O(2)
CIN(2)
Test
Input/output capacitance
Input capacitance
Max.
7
8
Unit
pF
pF
Conditions
VI/O = 0V
VIN = 0V
Notes: (1) VIL min. and VIH max. are for reference only and are not tested.
(2) This parameter is periodically sampled and not 100% tested.
REV 1.4.2 10/3/03
www.xicor.com
Characteristics subject to change without notice. 3 of 14




Recommended third-party 20CZ16 Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)