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N-Channel MOSFET. APM3040ND Datasheet

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N-Channel MOSFET. APM3040ND Datasheet
















APM3040ND MOSFET. Datasheet pdf. Equivalent













Part

APM3040ND

Description

N-Channel MOSFET



Feature


www.DataSheet4U.com APM3040ND N-Channel Enhancement Mode MOSFET Features • 30V/3A, RDS(ON)=31mΩ(typ.) @ VGS=10V RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON) =55mΩ(typ.) @ VGS=2.5V Pin Descripti on G D S • • • Super High Dens e Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top Vi ew of SOT-89 (2) D Applications • (1) G Switching Regulators Switch.
Manufacture

Anpec Electronics

Datasheet
Download APM3040ND Datasheet


Anpec Electronics APM3040ND

APM3040ND; ing Converters S (3) N-Channel MOSFET Ordering and Marking Information A PM 3 040N L e a d F re e C o d e H a n d lin g C o d e Tem p. Range P ackage C ode P ackage C ode D : S O T -89 O p e r a tin g J u n c tio n T e m p . R a n g e C : - 5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & R eel L e a d F re e C o d e L : L e a d F re e D e v ic e B la n k.


Anpec Electronics APM3040ND

: O rig in a l D e v ic e A PM 3040N D : A PM 3040N XXXXX X X X X X - D a t e C o d e Note: ANPEC lead-free produc ts contain molding compounds/die attach materials and 100% matte in plate term ination finish; which are fully complia nt with RoHS and compatible with both S nPb and lead-free soldiering operations . ANPEC lead-free products meet or exce ed the lead-free r.


Anpec Electronics APM3040ND

equirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak re flow temperature. ANPEC reserves the r ight to make changes to improve reliabi lity or manufacturability without notic e, and advise customers to obtain the l atest version of relevant information t o verify before placing orders. Copyrig ht  ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www..




Part

APM3040ND

Description

N-Channel MOSFET



Feature


www.DataSheet4U.com APM3040ND N-Channel Enhancement Mode MOSFET Features • 30V/3A, RDS(ON)=31mΩ(typ.) @ VGS=10V RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON) =55mΩ(typ.) @ VGS=2.5V Pin Descripti on G D S • • • Super High Dens e Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top Vi ew of SOT-89 (2) D Applications • (1) G Switching Regulators Switch.
Manufacture

Anpec Electronics

Datasheet
Download APM3040ND Datasheet




 APM3040ND
www.DataSheet4U.com
APM3040ND
N-Channel Enhancement Mode MOSFET
Features
30V/3A,
RDS(ON)=31m(typ.) @ VGS=10V
RDS(ON)=35m(typ.) @ VGS=4.5V
RDS(ON)=55m(typ.)
@
V =2.5V
GS
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Pin Description
G
D
S
Top View of SOT-89
(2)
D
Applications
Switching Regulators
Switching Converters
(1)
G
S
(3)
N-Channel MOSFET
Ordering and Marking Information
APM 3040N
Lead Free C ode
H a nd lin g C o d e
Tem p. Range
Package Code
APM 3040N D:
APM 3040N
XXXXX
Package Code
D : SO T-89
O perating Junction T em p. R ange
C : -55 to 150°C
H a nd lin g C o d e
TU : Tube
TR : Tape & Reel
Lead Free C ode
L : Lead F ree D evice B lank : O riginal D evice
X X X X X - D ate C ode
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
1
www.anpec.com.tw




 APM3040ND
www.DataSheet4U.com
APM3040ND
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
VDSS
VGSS
ID*
IDM*
IS*
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
VGS=10V
TJ
TSTG
Maximum Junction Temperature
Storage Temperature Range
PD* Power Dissipation for Single Operation
RθJA* Thermal Resistance-Junction to Ambient
Note:
*Surface Mounted on 1in2 pad area, t 10sec.
TA=25°C
TA=100°C
Rating
30
±12
3
12
1
150
-55 to 150
1.47
0.58
85
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Condition
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
VSDa Diode Forward Voltage
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS=0V, IDS=250µA
VDS=24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±12V, VDS=0V
VGS=10V, IDS=3A
VGS=4.5V, IDS=1.5A
VGS=2.5V, IDS=0.5A
ISD=0.5A , VGS=0V
VDS=15V, VGS=10V,
IDS=3A
APM3040ND
Unit
Min. Typ. Max.
30 V
1
µA
30
0.6 0.75 1.5 V
±100 nA
31 40
35 50 m
55 70
0.7 1.3 V
18 23
2.5 nC
2
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
2
www.anpec.com.tw




 APM3040ND
www.DataSheet4U.com
APM3040ND
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Dynamic Characteristics b
RG Gate Resistance
VGS=0, VDS=0, F=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=25V,
Frequency=1.0MHz
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
VDD=15V, RL=15,
IDS=1A, VGEN=10V,
RG=6
Tf Turn-off Fall Time
Notes:
a : Pulse test ; pulse width300µs, duty cycle2%.
b : Guaranteed by design, not subject to production testing.
APM3040ND
Unit
Min. Typ. Max.
1.5
430
80
40
11 21
17 32
37 68
20 38
pF
ns
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
3
www.anpec.com.tw




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