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N-Channel MOSFET. AO3400 Datasheet

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N-Channel MOSFET. AO3400 Datasheet






AO3400 MOSFET. Datasheet pdf. Equivalent




AO3400 MOSFET. Datasheet pdf. Equivalent





Part

AO3400

Description

30V N-Channel MOSFET



Feature


AO3400 30V N-Channel MOSFET General Des cription Product Summary The AO3400 c ombines advanced trench MOSFET technolo gy with a low resistance package to pro vide extremely low RDS(ON). This device is suitable for use as a load switch o r in PWM applications. VDS ID (at VGS= 10V) RDS(ON) (at VGS=10V) RDS(ON) (at V GS = 4.5V) RDS(ON) (at VGS = 2.5V) 30V 5.8A < 28mΩ < 33m.
Manufacture

Alpha & Omega Semiconductors

Datasheet
Download AO3400 Datasheet


Alpha & Omega Semiconductors AO3400

AO3400; Ω < 52mΩ SOT23 Top View Bottom Vi ew D D D SG GS Absolute Maximum Ra tings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Contin uous Drain TA=25°C Current TA=70°C Pulsed Drain Current C ID IDM TA=25 °C Power Dissipation B TA=70°C PD J unction and Storage Temperature Range TJ, TSTG G S Maximum 30 ±1.


Alpha & Omega Semiconductors AO3400

2 5.8 4.9 30 1.4 0.9 -55 to 150 Thermal Characteristics Parameter Maximum Junc tion-to-Ambient A Maximum Junction-to-A mbient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symb ol RθJA RθJL Typ 70 100 63 Max 90 1 25 80 Units V V A W °C Units °C/W ° C/W °C/W Rev 8: Dec 2011 www.aosmd.c om Page 1 of 5 AO3400 Electrical Cha racteristics (TJ=25°C unle.


Alpha & Omega Semiconductors AO3400

ss otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC P ARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Cu rrent ID=250µA, VGS=0V VDS=30V, VGS=0 V IGSS VGS(th) ID(ON) Gate-Body leaka ge current Gate Threshold Voltage On st ate drain current VDS=0V, VGS= ±12V V DS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=1 0V, ID=5.8A RDS(ON) .

Part

AO3400

Description

30V N-Channel MOSFET



Feature


AO3400 30V N-Channel MOSFET General Des cription Product Summary The AO3400 c ombines advanced trench MOSFET technolo gy with a low resistance package to pro vide extremely low RDS(ON). This device is suitable for use as a load switch o r in PWM applications. VDS ID (at VGS= 10V) RDS(ON) (at VGS=10V) RDS(ON) (at V GS = 4.5V) RDS(ON) (at VGS = 2.5V) 30V 5.8A < 28mΩ < 33m.
Manufacture

Alpha & Omega Semiconductors

Datasheet
Download AO3400 Datasheet




 AO3400
AO3400
30V N-Channel MOSFET
General Description
Product Summary
The AO3400 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is suitable for use as a
load switch or in PWM applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
RDS(ON) (at VGS = 2.5V)
30V
5.8A
< 28m
< 33m
< 52m
SOT23
Top View
Bottom View
D
D
D
SG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
30
±12
5.8
4.9
30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 8: Dec 2011
www.aosmd.com
Page 1 of 5




 AO3400
AO3400
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=5.8A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
Forward Transconductance
VDS=5V, ID=5.8A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
0.65
30
1.05
18
28
19
24
33
0.7
1
5
100
1.45
28
39
33
52
1
2
V
µA
nA
V
A
m
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
630
75
50
1.5 3 4.5
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
6 7 nC
Qgs Gate Source Charge
VGS=4.5V, VDS=15V, ID=5.8A
1.3 nC
Qgd Gate Drain Charge
1.8 nC
tD(on)
Turn-On DelayTime
3 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=2.6, 2.5 ns
tD(off)
Turn-Off DelayTime
RGEN=3
25 ns
tf Turn-Off Fall Time
4 ns
trr Body Diode Reverse Recovery Time IF=5.8A, dI/dt=100A/µs
8.5 ns
Qrr Body Diode Reverse Recovery Charge IF=5.8A, dI/dt=100A/µs
2.6 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 8: Dec 2011
www.aosmd.com
Page 2 of 5




 AO3400
AO3400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
10V
35
30
3V
4.5V
25 2.5V
20
15
10
VGS=2V
5
0
01234
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
15
VDS=5V
12
9
6
125°C
3
25°C
0
0 0.5 1 1.5 2 2.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
3
30
25
VGS=4.5V
20
15 VGS=10V
1.8
VGS=4.5V
Id=5A
1.6
1.4 17
VGS=105V
1.2 Id=5.8A2
10
1
10
0 5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
0
25 50 75 100 125 150 175
Temperature (°C) 0
Figure 4: On-Resistance vs. Junction18Temperature
(Note E)
50
ID=5.8A
40
125°C
30
20
25°C
10
0 2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+01
1.0E+00
40
1.0E-01
1.0E-02
1.0E-03
125°C
25°C
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 8: Dec 2011
www.aosmd.com
Page 3 of 5



Recommended third-party AO3400 Datasheet






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