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N-Channel MOSFET. AO3400A Datasheet

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N-Channel MOSFET. AO3400A Datasheet






AO3400A MOSFET. Datasheet pdf. Equivalent




AO3400A MOSFET. Datasheet pdf. Equivalent





Part

AO3400A

Description

N-Channel MOSFET



Feature


AO3400A 30V N-Channel MOSFET General De scription Product Summary The AO3400A combines advanced trench MOSFET techno logy with a low resistance package to p rovide extremely low RDS(ON). This devi ce is suitable for use as a load switch or in PWM applications. VDS ID (at VG S=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 3 0V 5.7A < 26.5mΩ <.
Manufacture

Alpha & Omega Semiconductors

Datasheet
Download AO3400A Datasheet


Alpha & Omega Semiconductors AO3400A

AO3400A; 32mΩ < 48mΩ SOT23 Top View Botto m View D D D SG GS Absolute Maximu m Ratings TA=25°C unless otherwise not ed Parameter Symbol Drain-Source Vol tage VDS Gate-Source Voltage VGS Co ntinuous Drain TA=25°C Current TA=7 0°C Pulsed Drain Current C ID IDM T A=25°C Power Dissipation B TA=70°C P D Junction and Storage Temperature Ran ge TJ, TSTG G S Maximum 3.


Alpha & Omega Semiconductors AO3400A

0 ±12 5.7 4.7 30 1.4 0.9 -55 to 150 Th ermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction -to-Ambient A D Maximum Junction-to-Lea d t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 70 100 63 Max 90 125 80 Un .


Alpha & Omega Semiconductors AO3400A

.

Part

AO3400A

Description

N-Channel MOSFET



Feature


AO3400A 30V N-Channel MOSFET General De scription Product Summary The AO3400A combines advanced trench MOSFET techno logy with a low resistance package to p rovide extremely low RDS(ON). This devi ce is suitable for use as a load switch or in PWM applications. VDS ID (at VG S=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 3 0V 5.7A < 26.5mΩ <.
Manufacture

Alpha & Omega Semiconductors

Datasheet
Download AO3400A Datasheet




 AO3400A
AO3400A
30V N-Channel MOSFET
General Description
Product Summary
The AO3400A combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is suitable for use as a
load switch or in PWM applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
RDS(ON) (at VGS = 2.5V)
30V
5.7A
< 26.5m
< 32m
< 48m
SOT23
Top View
Bottom View
D
D
D
SG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
30
±12
5.7
4.7
30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 3: Dec 2011
www.aosmd.com
Page 1 of 5




 AO3400A
AO3400A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=5.7A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
VGS=2.5V, ID=3A
Forward Transconductance
VDS=5V, ID=5.7A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
0.65
30
1.05
18
28
19
24
33
0.7
1
5
100
1.45
26.5
38
32
48
1
2
V
µA
nA
V
A
m
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
630
75
50
1.5 3 4.5
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
6 7 nC
Qgs Gate Source Charge
VGS=4.5V, VDS=15V, ID=5.7A
1.3 nC
Qgd Gate Drain Charge
1.8 nC
tD(on)
Turn-On DelayTime
3 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=2.6, 2.5 ns
tD(off)
Turn-Off DelayTime
RGEN=3
25 ns
tf Turn-Off Fall Time
4 ns
trr Body Diode Reverse Recovery Time IF=5.7A, dI/dt=100A/µs
8.5 ns
Qrr Body Diode Reverse Recovery Charge IF=5.7A, dI/dt=100A/µs
2.6 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 3: Dec 2011
www.aosmd.com
Page 2 of 5




 AO3400A
AO3400A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
10V
35
30
3V
4.5V
25 2.5V
20
15
10
VGS=2V
5
0
01234
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
15
VDS=5V
12
9
6
125°C
3
25°C
0
0 0.5 1 1.5 2 2.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
3
30
25
VGS=4.5V
20
15 VGS=10V
1.8
VGS=4.5V
1.6 ID=5A
1.4 17
VGS=105V
1.2 ID=5.7A2
10
1
10
0 5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
0
25 50 75 100 125 150 175
Temperature (°C) 0
Figure 4: On-Resistance vs. Junction18Temperature
(Note E)
50
ID=5.7A
40
125°C
30
20
25°C
10
0 2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+01
1.0E+00
40
1.0E-01
1.0E-02
1.0E-03
125°C
25°C
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 3: Dec 2011
www.aosmd.com
Page 3 of 5



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