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P-Channel MOSFET. AO3401 Datasheet

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P-Channel MOSFET. AO3401 Datasheet






AO3401 MOSFET. Datasheet pdf. Equivalent




AO3401 MOSFET. Datasheet pdf. Equivalent





Part

AO3401

Description

P-Channel MOSFET



Feature


AO3401 30V P-Channel MOSFET General Des cription Product Summary The AO3401 u ses advanced trench technology to provi de excellent RDS(ON), low gate charge a nd operation with gate voltages as low as 2.5V. This device is suitable for us e as a load switch or in PWM applicatio ns. VDS ID (at VGS=-10V) RDS(ON) (at V GS=-10V) RDS(ON) (at VGS =-4.5V) RDS(ON ) (at VGS=-2.5V) .
Manufacture

Alpha & Omega Semiconductors

Datasheet
Download AO3401 Datasheet


Alpha & Omega Semiconductors AO3401

AO3401; -30V -4.0A < 50mΩ < 60mΩ < 85mΩ S OT23 Top View Bottom View D D D SG GS Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Sym bol Drain-Source Voltage VDS Gate-So urce Voltage VGS Continuous Drain TA =25°C Current TA=70°C Pulsed Drain Current C ID IDM TA=25°C Power Diss ipation B TA=70°C PD Junction and St orage Temperature Range TJ, .


Alpha & Omega Semiconductors AO3401

TSTG G S Maximum -30 ±12 -4 -3.2 -27 1 .4 0.9 -55 to 150 Thermal Characterist ics Parameter Maximum Junction-to-Ambie nt A Maximum Junction-to-Ambient A D Ma ximum Junction-to-Lead t ≤ 10s Stead y-State Steady-State Symbol RθJA RθJ L Typ 70 100 63 Max 90 125 80 Units V V A W °C Units °C/W °C/W °C/W Re v 6: Feb. 2011 www.aosmd.com Page 1 o f 5 AO3401 Electrical Cha.


Alpha & Omega Semiconductors AO3401

racteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-2 50µA, VGS=0V VDS=-30V, VGS=0V IGSS VG S(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS= ±12V VDS=VGS ID= -250µA VGS=-10V, VDS=.

Part

AO3401

Description

P-Channel MOSFET



Feature


AO3401 30V P-Channel MOSFET General Des cription Product Summary The AO3401 u ses advanced trench technology to provi de excellent RDS(ON), low gate charge a nd operation with gate voltages as low as 2.5V. This device is suitable for us e as a load switch or in PWM applicatio ns. VDS ID (at VGS=-10V) RDS(ON) (at V GS=-10V) RDS(ON) (at VGS =-4.5V) RDS(ON ) (at VGS=-2.5V) .
Manufacture

Alpha & Omega Semiconductors

Datasheet
Download AO3401 Datasheet




 AO3401
AO3401
30V P-Channel MOSFET
General Description
Product Summary
The AO3401 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as
a load switch or in PWM applications.
VDS
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS =-4.5V)
RDS(ON) (at VGS=-2.5V)
-30V
-4.0A
< 50m
< 60m
< 85m
SOT23
Top View
Bottom View
D
D
D
SG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
-30
±12
-4
-3.2
-27
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 6: Feb. 2011
www.aosmd.com
Page 1 of 5




 AO3401
AO3401
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-30V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=-250µA
VGS=-10V, VDS=5V
VGS=-10V, ID=-4.0A
RDS(ON)
gFS
VSD
IS
ISM
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-3.7A
VGS=-2.5V, ID=-2A
Forward Transconductance
VDS=-5V, ID=-4.0A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Pulsed Body-Diode CurrentB
TJ=55°C
TJ=125°C
-30
-0.5
-27
V
-1
µA
-5
±100 nA
-0.9 -1.3 V
A
41 50
m
62 75
47 60 m
60 85 m
17 S
-0.7 -1
V
-2 A
-27 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
645 pF
80 pF
55 pF
4 7.8 12
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
14 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
7 nC
VGS=-10V, VDS=-15V, ID=-4.0A 1.5 nC
Qgd Gate Drain Charge
2.5 nC
tD(on)
Turn-On DelayTime
6.5 ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V,
RL=3.75, RGEN=3
3.5 ns
41 ns
tf Turn-Off Fall Time
9 ns
trr Body Diode Reverse Recovery Time IF=-4.0A, dI/dt=100A/µs
11 ns
Qrr Body Diode Reverse Recovery Charge IF=-4.0A, dI/dt=100A/µs
3.5 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 6: Feb. 2011
www.aosmd.com
Page 2 of 5




 AO3401
AO3401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
10V
20
4.5V
15
-2.5V
10
5
VGS=-2.0V
0
01234
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
20
VDS=-5V
15
10
5 125°C
25°C
0
0 0.5 1 1.5 2 2.5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
3
100 1.8
80
VGS=-2.5V
60
VGS=-4.5V
40
VGS=-10V
20
0 2 4 6 8 10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.6 VGS=-10V
ID=-4A
1.4 VGS=-4.157V
ID=-3.7A 5
1.2 2
VGS=-2.5V
ID=-2A
10
1
0.8
0
25 50 75 100 125 150 175
Temperature (°C) 0
Figure 4: On-Resistance vs. Junction18Temperature
(Note E)
150
ID=-4A
130
110
90 125°C
70
50 25°C
30
0 2 4 6 8 10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+01
1.0E+00
40
1.0E-01
1.0E-02
1.0E-03
1.0E-04
125°C
25°C
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 6: Feb. 2011
www.aosmd.com
Page 3 of 5



Recommended third-party AO3401 Datasheet






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