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Power Transistor. D1710 Datasheet

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Power Transistor. D1710 Datasheet






D1710 Transistor. Datasheet pdf. Equivalent




D1710 Transistor. Datasheet pdf. Equivalent





Part

D1710

Description

Silicon Diffused Power Transistor



Feature


www.DataSheet4U.com 2SD1710 GENERAL DES CRIPTION Silicon Diffused Power Transi stor Highvoltage,high-speed switching npn transistors in a plastic package,pi marily for use in horizontal deflection circuites of colour television receive rs QUICK REFERENCE DATA SYMBOL TO-3PM L CONDITIONS VBE = 0V TYP VCESM VCEO I C ICM Ptot VCEsat Icsat VF tf PARAMETE R Collector-emitte.
Manufacture

Wing Shing Computer

Datasheet
Download D1710 Datasheet


Wing Shing Computer D1710

D1710; r voltage peak value Collector-emitter v oltage (open base) Collector current (D C) Collector current peak value Total p ower dissipation Collector-emitter satu ration voltage Collector saturation cur rent Diode forward voltage Fall time T mb 25 IC = 4.0A; IB = 1.0A f = 16KHz IF = 4.5A ICsat = 4.5A; f = 16KHz 1.6 0. 5 MAX 1500 600 5 10 50 5.0 2.0 1.0 UN IT V V A A W V A V.


Wing Shing Computer D1710

s LIMITING VALUES SYMBOL VCESM VCEO I C ICM IB IBM Ptot Tstg Tj PARAMETER Co llector-emitter voltage peak value Coll ector-emitter voltage (open base) Colle ctor current (DC) Collector current pea k value Base current (DC) Base current peak value Total power dissipation Stor age temperature Junction temperature C ONDITIONS VBE = 0V Tmb 25 MIN -55 - MAX 1500 600 5 10 .


Wing Shing Computer D1710

50 150 150 UNIT V V A A A A W ELECTRIC AL CHARACTERISTICS SYMBOL ICE ICES VCE Osust VCEsat VBEsat hFE VF fT Cc ts tf PARAMETER Collector cut-off current C ollector-emitter sustaining voltage Col lector-emitter saturation voltages Base -emitter satuation voltage DC current g ain Diode forward voltage Transition fr equency at f = 5MHz Collector capacitan ce at f = 1MHz Swi.

Part

D1710

Description

Silicon Diffused Power Transistor



Feature


www.DataSheet4U.com 2SD1710 GENERAL DES CRIPTION Silicon Diffused Power Transi stor Highvoltage,high-speed switching npn transistors in a plastic package,pi marily for use in horizontal deflection circuites of colour television receive rs QUICK REFERENCE DATA SYMBOL TO-3PM L CONDITIONS VBE = 0V TYP VCESM VCEO I C ICM Ptot VCEsat Icsat VF tf PARAMETE R Collector-emitte.
Manufacture

Wing Shing Computer

Datasheet
Download D1710 Datasheet




 D1710
www.DataSheet4U.com
2SD1710
Silicon Diffused Power Transistor
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
plastic package,pimarily for use in horizontal deflection
circuites of colour television receivers
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
Icsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0V
TO-3PML
Tmb 25
IC = 4.0A; IB = 1.0A
f = 16KHz
IF = 4.5A
ICsat = 4.5A; f = 16KHz
TYP MAX UNIT
- 1500 V
- 600 V
- 5A
- 10 A
- 50 W
- 5.0 V
- -A
1.6 2.0
V
0.5 1.0
s
LIMITING VALUES
SYMBOL
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
Tmb 25
MIN MAX UNIT
-
1500
V
- 600 V
- 5A
- 10 A
- -A
- -A
- 50 W
-55 150
- 150
ELECTRICAL CHARACTERISTICS
SYMBOL
ICE
ICES
VCEOsust
VCEsat
VBEsat
hFE
VF
fT
Cc
ts
tf
PARAMETER
Collector cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
Diode forward voltage
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time
CONDITIONS
VBE = 0V; VCE = VCESMmax
VBE = 0V; VCE = VCESMmax
Tj = 125
IB = 0A; IC = 100mA
L = 25mH
IC = 4.0A; IB = 1.0A
IC = 4.0A; IB = 1.0A
IC = 0.5A; VCE = 5V
IC = 0.1A; VCE = 5V
VCB = 10V
ICsat = 4.5A; Lc=1mH; Cfb = 4nF
IB(end) = 0.8A; IC = 4.5A ; VCC = 105V
TYP MAX UNIT
- 1.0 mA
- 2.0 mA
-V
- 5.0 V
- 1.5 V
8
- -V
2 - MHz
80 - pF
--
s
0.5 1.0
s
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com











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