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Silicon Transistor. 2SC5450 Datasheet

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Silicon Transistor. 2SC5450 Datasheet






2SC5450 Transistor. Datasheet pdf. Equivalent




2SC5450 Transistor. Datasheet pdf. Equivalent





Part

2SC5450

Description

NPN Triple Diffused Planar Silicon Transistor



Feature


Ordering number:EN5955 NPN Triple Diffu sed Planar Silicon Transistor 2SC5450 Ultrahigh-Definition CRT Display Horizo ntal Deflection Output Applications Fea tures · High speed. · High breakdown voltage (VCBO=1600V). · High reliabili ty (Adoption of HVP process). · Adopti on of MBIT process. www.DataSheet4U.com Package Dimensions unit:mm 2039D [2SC 5450] 3.4 16.0 5.6 3.1.
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SC5450 Datasheet


Sanyo Semicon Device 2SC5450

2SC5450; 5.0 8.0 21.0 22.0 20.4 2.8 2.0 1.0 4.0 2.0 0.6 1 2 3 Specifications A bsolute Maximum Ratings at Ta = 25˚C P arameter Collector-to-Base Voltage Coll ector-to-Emitter Voltage Emitter-to-Bas e Voltage Collector Current Collector C urrent (Pulse) Collector Dissipation Ju nction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 5.45 5.4.


Sanyo Semicon Device 2SC5450

5 1 : Base 2 : Collector 3 : Emitter SA NYO : TO-3PML Conditions 3.5 Ratings 1600 800 6 10 25 3.0 70 150 –55 to + 150 2.0 Unit V V V A A W W ˚C ˚C E lectrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Col lector Cutoff Current Collector-to-Emit ter Sustain Voltage Emitter Cutoff Curr ent Collector-to-Emitter Saturation Vol tage Base-to-Emitter Sa.


Sanyo Semicon Device 2SC5450

turation Voltage Symbol ICBO ICES VCB=80 0V, IE=0 VCE=1600V, RBE=0 800 1.0 5 1.5 Conditions Ratings min typ max 10 1.0 Unit µA mA V mA V V VCEO(sus) IC=100m A, IB=0 IEBO VEB=4V, IC=0 VCE(sat) IC=7 A, IB=1.75A VBE(sat) IC=7A, IB=1.75A C ontinued on next page. Any and all SAN YO products described or contained here in do not have specifications that can handle applications.

Part

2SC5450

Description

NPN Triple Diffused Planar Silicon Transistor



Feature


Ordering number:EN5955 NPN Triple Diffu sed Planar Silicon Transistor 2SC5450 Ultrahigh-Definition CRT Display Horizo ntal Deflection Output Applications Fea tures · High speed. · High breakdown voltage (VCBO=1600V). · High reliabili ty (Adoption of HVP process). · Adopti on of MBIT process. www.DataSheet4U.com Package Dimensions unit:mm 2039D [2SC 5450] 3.4 16.0 5.6 3.1.
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SC5450 Datasheet




 2SC5450
Ordering number:EN5955
NPN Triple Diffused Planar Silicon Transistor
2SC5450
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
· High speed.
· High breakdown voltage (VCBO=1600V).
· High reliability (Adoption of HVP process).
w w w . D a t a S ·hAedeopt t4ioUn .ocf Mo mBIT process.
Package Dimensions
unit:mm
2039D
[2SC5450]
3.4 16.0
5.6
3.1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
2.8
2.0
1.0
123
5.45 5.45
2.0
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
Conditions
Ratings
1600
800
6
10
25
3.0
70
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector-to-Emitter Sustain Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
ICES
VCEO(sus)
IEBO
VCE(sat)
VBE(sat)
VCB=800V, IE=0
VCE=1600V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
IC=7A, IB=1.75A
IC=7A, IB=1.75A
Ratings
min typ max
Unit
10 µA
1.0 mA
800 V
1.0 mA
5V
1.5 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61099TS (KOTO) TA-1386 No.5957–1/4




 2SC5450
Continued from preceding page.
Parameter
DC Current Gain
Storage Time
Fall Time
2SC5450
Symbol
Conditions
hFE1
hFE2
tstg
tf
VCE=5V, IC=1A
VCE=5V, IC=7A
IC=6A, IB1=1.0A, IB2=–2.5A
IC=6A, IB1=1.0A, IB2=–2.5A
Switching Time Test Circuit
PW=20µs
www.DataSheet4U.com D.C.1%
INPUT
VR
50
IB1
IB2
RB
+
100µF
VBE=–2V
OUTPUT
+
470µF
RL=33.3
VCC=200V
Ratings
min typ
15
4
max
30
7
3.0
0.2
Unit
µs
µs
I C - VCE
10
9 2.0A 1.8A 1.6A 1.4A
8
1.2A
7 1.0A
0.8A
6 0.6A
5 0.4A
4 0.2A
3
2
1
IB = 0
0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE – V
100
7
5 Ta = 120°C
3
25°C
2
-40°C
10
7
5
hFE - I C
VCE= 5V
3
2
1.0
0.1
23
5 7 1.0
23
5 7 10
Collector Current, IC – A
10 VCE = 5V
9
I C - VBE
8
7
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V
10
7
IC / IB = 5
5
3
2
VCE(sat) - I C
1.0
7
5
3
2
0.1 Ta=-40°C
7
5 120°C 25°C
3
2
0.01
0.1
23
5 7 1.0
23
Collector Current, IC – A
5 7 10
No.5955–2/4




 2SC5450
2SC5450
SW Time - I C
SW Time - I B2
7
5
3
VCC = 200V
tstg IIBC2/I/BIB11==62.5
R load
10
7
5
VCC = 200V
IC =6A
tstg
IB1 =1A
R load
23
2
1.0
7
5
3 tf
2
1.0
7 tf
5
3
2
0.1
www.DataSheet4U.com
7
7
0.1
2 3 5 7 1.0
2 3 5 7 10
Collector Current, IC – A
2
5
3 I CP
2
10 I C
7
5
3
2
1.0
7
5
3
2
Forward Bias A S O
PC =70W
0.1
7
5 Tc = 25°C
3 Single pulse
2
3 5 7 10
2 3 5 7 100 2 3 5
Collector-to-Emitter Voltage, VCE – V
7 1000
4.0 PC - Ta
3.0
2.0 No heat sink
1.0
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – °C
0.1
7
7 0.1
5
3
2
2 3 5 7 1.0
23
Base Current, IB2 – A
Reverse Bias A S O
5 7 10
10
7
5
3
2
1.0
7
5
3 L =500µH
2
IB2 =-3A
Tc = 25°C
0.1 Single pulse
3 5 7 100
23
5 7 1000
Collector-to-Emitter Voltage, VCE – V
80 PC - Tc
2
3
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc – °C
No.5955–3/4






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