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Silicon Transistor. 2SC5451 Datasheet

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Silicon Transistor. 2SC5451 Datasheet






2SC5451 Transistor. Datasheet pdf. Equivalent




2SC5451 Transistor. Datasheet pdf. Equivalent





Part

2SC5451

Description

NPN Triple Diffused Planar Silicon Transistor



Feature


Ordering number:EN5956 NPN Triple Diffu sed Planar Silicon Transistor 2SC5451 Ultrahigh-Definition CRT Display Horizo ntal Deflection Output Applications Fea tures · High speed. · High breakdown voltage (VCBO=1600V). · High reliabili ty (Adoption of HVP process). · Adopti on of MBIT process. a t a S h e e t 4 U . c o m Package Dimensions unit:mm 20 39D [2SC5451] 3.4 16.0.
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SC5451 Datasheet


Sanyo Semicon Device 2SC5451

2SC5451; 5.6 3.1 w w w . D 5.0 8.0 21.0 22.0 20.4 2.8 2.0 1.0 4.0 2.0 0.6 1 2 3 Specifications Absolute Maximum Rati ngs at Ta = 25˚C Parameter Collector-t o-Base Voltage Collector-to-Emitter Vol tage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Colle ctor Dissipation Junction Temperature S torage Temperature Symbol VCBO VCEO VEB O IC ICP PC Tj Tstg.


Sanyo Semicon Device 2SC5451

Tc=25˚C 5.45 Conditions 3.5 5.45 Ratings 1600 800 6 15 35 3 75 150 –55 to +150 2.0 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Unit V V V A A W W ˚C ˚C Electrical Characteris tics at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sus tain Voltage Emitter Cutoff Current Col lector Cutoff Current DC Current Gain S ymbol ICES VCE=1600V, RB.


Sanyo Semicon Device 2SC5451

E=0 VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V , IC=0 ICBO VCB=800V, IE=0 hFE1 hFE2 VC E=5V, IC=1.0A VCE=5V, IC=11A Conditions Ratings min 800 1.0 10 15 4 30 7 typ m ax 1.0 Unit mA V mA µA Continued on n ext page. Any and all SANYO products d escribed or contained herein do not hav e specifications that can handle applic ations that require extremely high leve ls of reliability, .

Part

2SC5451

Description

NPN Triple Diffused Planar Silicon Transistor



Feature


Ordering number:EN5956 NPN Triple Diffu sed Planar Silicon Transistor 2SC5451 Ultrahigh-Definition CRT Display Horizo ntal Deflection Output Applications Fea tures · High speed. · High breakdown voltage (VCBO=1600V). · High reliabili ty (Adoption of HVP process). · Adopti on of MBIT process. a t a S h e e t 4 U . c o m Package Dimensions unit:mm 20 39D [2SC5451] 3.4 16.0.
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SC5451 Datasheet




 2SC5451
Ordering number:EN5956
NPN Triple Diffused Planar Silicon Transistor
2SC5451
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
· High speed.
· High breakdown voltage (VCBO=1600V).
· High reliability (Adoption of HVP process).
w w w . D a· At doaptSionhof eMBeITt p4rocUess.. c o m
Package Dimensions
unit:mm
2039D
[2SC5451]
3.4 16.0
5.6
3.1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
2.8
2.0
1.0
123
5.45 5.45
2.0
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
Conditions
Ratings
1600
800
6
15
35
3
75
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector-to-Emitter Sustain Voltage
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain
Symbol
Conditions
ICES
VCEO(sus)
IEBO
ICBO
hFE1
hFE2
VCE=1600V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
VCB=800V, IE=0
VCE=5V, IC=1.0A
VCE=5V, IC=11A
Ratings
min typ max
Unit
1.0 mA
800 V
1.0 mA
10 µA
15 30
47
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61099TS (KOTO) TA-1385 No.5956–1/4




 2SC5451
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Storage Time
Fall Time
2SC5451
Symbol
Conditions
VCE(sat)
VBE(sat)
tstg
tf
IC=11A, IB=2.75A
IC=11A, IB=2.75A
IC=9A, IB1=1.5A, IB2=–3.75A
IC=9A, IB1=1.5A, IB2=–3.75A
Switching Time Test Circuit
PW=20µs
www.DataSheet4U.com D.C.1%
INPUT
VR
50
IB1
IB2
RB
+
100µF
VBE=–2V
OUTPUT
+
470µF
RL=22.2
VCC=200V
Ratings
min typ max
Unit
5V
1.5 V
3.0 µs
0.2 µs
I C - VCE
14
12
10 1.4A 1.2A 1.0A
8 0.8A
0.6A
6 0.4A
0.2A
4
2
IB = 0
00 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE – V
100 hFE - I C
7
5
Ta = 120°C
3
2 25°C
VCE= 5V
-40°C
10
7
5
3
2
1.0
0.1
2 3 5 7 1.0
2 3 5 7 10
2
Collector Current, IC – A
16 VCE = 5V
14
I C - VBE
12
10
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0
Base-to-Emitter Voltage, VBE – V
10
7
IC / IB = 5
5
3
2
VCE(sat) - I C
1.0
7
5
3
2
0.1 Ta=-40°C
7
5 120°C 25°C
3
2
0.01
0.1
2 3 5 7 1.0
2 3 5 7 10
Collector Current, IC – A
1.2
2
No.5956–2/4




 2SC5451
2SC5451
SW Time - I C
7
5 tstg
3
2
1.0
7
5
tf
3
2
www.DataSheet4U.com
VCC= 200V
0.1 IC / IB1=6
7
5
IB2/ IB1=2.5
R load
7 0.1 2 3
5 7 1.0
2 3 5 7 10
Collector Current, IC – A
23
7
5 I CP
3
2 IC
Forward Bias A S O
10
7
5
PC =75W
3
2
1.0
7
5
3
2
0.1
7
5 Tc = 25°C
3 Single pulse
2
2 3 5 7 10
2 3 5 7 100
2 3 5 7 1000
Collector-to-Emitter Voltage, VCE – V
4.0 PC - Ta
SW Time - I B2
10
7
tstg
VCC= 200V
IC =9A
5 IB1 =1.5A
R load
3
2
1.0
7
tf
5
3
2
0.1
7
7 0.1
5
3
2
2 3 5 7 1.0
23
Base Current, IB2 – A
Reverse Bias A S O
5 7 10
10
7
5
3
2
1.0
7
5
3 L =500µH
2
IB2 = -3A
Tc = 25°C
0.1 Single pulse
10
23
5 7 100
2
Collector-to-Emitter Voltage, VCE – V
80 PC - Tc
75
3
3.0
2.0 No heat sink
1.0
60
40
20
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – °C
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc – °C
No.5956–3/4






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