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Silicon Transistor. 2SC5452 Datasheet

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Silicon Transistor. 2SC5452 Datasheet






2SC5452 Transistor. Datasheet pdf. Equivalent




2SC5452 Transistor. Datasheet pdf. Equivalent





Part

2SC5452

Description

NPN Triple Diffused Planar Silicon Transistor



Feature


Ordering number:EN5957A NPN Triple Diff used Planar Silicon Transistor 2SC5452 Ultrahigh-Definition CRT Display Horiz ontal Deflection Output Applications Fe atures · High speed. · High breakdown voltage (VCBO=1600V). · High reliabil ity (Adoption of HVP process). · Adopt ion of MBIT process. a t a S h e e t 4 U . c o m Package Dimensions unit:mm 2 039D [2SC5452] 3.4 16..
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SC5452 Datasheet


Sanyo Semicon Device 2SC5452

2SC5452; 0 5.0 8.0 5.6 3.1 w w w . D 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximu m Ratings at Ta = 25˚C Parameter Colle ctor-to-Base Voltage Collector-to-Emitt er Voltage Emitter-to-Base Voltage Coll ector Current Collector Current (Pulse) Collector Dissipation Junction Tempera ture Storage Temperature Symbol VCBO VC EO VEBO IC ICP PC T.


Sanyo Semicon Device 2SC5452

c=25˚C 5.45 5.45 1 : Base 2 : Collec tor 3 : Emitter SANYO : TO-3PML Condit ions Ratings 1600 800 6 20 40 3 75 150 –55 to +150 2.0 Unit V V V A A W W ˚C ˚C Tj Tstg Electrical Character istics at Ta = 25˚C Parameter Collecto r Cutoff Current Collector-to-Emitter S ustain Voltage Emitter Cutoff Current C ollector Cutoff Current DC Current Gain Symbol ICES VCE=1600V, .


Sanyo Semicon Device 2SC5452

RBE=0 VCEO(sus) IC=100mA, IB=0 IEBO VEB= 4V, IC=0 ICBO VCB=800V, IE=0 hFE1 hFE2 VCE=5V, IC=1A VCE=5V, IC=14A Conditions Ratings min 800 1.0 10 15 4 30 7 typ m ax 1.0 Unit mA V mA µA Continued on n ext page. Any and all SANYO products d escribed or contained herein do not hav e specifications that can handle applic ations that require extremely high leve ls of reliability, .

Part

2SC5452

Description

NPN Triple Diffused Planar Silicon Transistor



Feature


Ordering number:EN5957A NPN Triple Diff used Planar Silicon Transistor 2SC5452 Ultrahigh-Definition CRT Display Horiz ontal Deflection Output Applications Fe atures · High speed. · High breakdown voltage (VCBO=1600V). · High reliabil ity (Adoption of HVP process). · Adopt ion of MBIT process. a t a S h e e t 4 U . c o m Package Dimensions unit:mm 2 039D [2SC5452] 3.4 16..
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SC5452 Datasheet




 2SC5452
Ordering number:EN5957A
NPN Triple Diffused Planar Silicon Transistor
2SC5452
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
· High speed.
· High breakdown voltage (VCBO=1600V).
· High reliability (Adoption of HVP process).
w w w . D a· At doaptSionhof eMBeITt p4rocUess.. c o m
Package Dimensions
unit:mm
2039D
[2SC5452]
16.0
3.4
5.6
3.1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector-to-Emitter Sustain Voltage
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain
Symbol
Conditions
ICES
VCEO(sus)
IEBO
ICBO
hFE1
hFE2
VCE=1600V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
VCB=800V, IE=0
VCE=5V, IC=1A
VCE=5V, IC=14A
2.8
2.0
1.0
123
5.45 5.45
2.0
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
Ratings
1600
800
6
20
40
3
75
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
1.0 mA
800 V
1.0 mA
10 µA
15 30
47
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61099TS (KOTO) TA-1384 No.5957–1/4




 2SC5452
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Storage Time
Fall Time
2SC5452
Symbol
Conditions
VCE(sat)
VBE(sat)
tstg
tf
IC=14A, IB=3.5A
IC=14A, IB=3.5A
IC=12A, IB1=2.0A, IB2=–5.0A
IC=12A, IB1=2.0A, IB2=–5.0A
Switching Time Test Circuit
PW=20µs
w w w . D a t a S h e e t 4 U .Dc.Co.m1%
I NPUT
50
IB1
IB2
RB
VR
+
100µF
VBE=-2V
OUTPUT
RL=16.7
+
470µF
VCC=200V
Ratings
min typ max
Unit
5V
1.5 V
3.0 µs
0.2 µs
20 I C - VCE
18 5.0A 4.5A 4.0A 3.5A 3.0A
16
2.5A
14 2.0A
12 1.5A
10 1.0A
8 0.5A
6
4
2
0 IB= 0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE – V
hFE - I C
100
VCE = 5V
7
5
Ta=120°C
3
2 25°C
10 –40°C
7
5
3
2
1.0
0.1
2 3 5 7 1.0
2 3 5 7 10
Collector Current, IC – A
23
20
VCE = 5V
18
I C - VBE
16
14
12
10
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0
Base-to-Emitter Voltage, VBE – V
10
7
IC / IB=5
5
VCE(sat) - IC
3
2
1.2
1.0
7
5
3
2
0.1
7
Ta=–40°C
5
3 120°C
25°C
2
0.01
0.1
23
5 7 1.0
2 3 5 7 10
Collector Current, IC – A
23
No.5957–2/4




 2SC5452
2SC5452
SW Time - I C
7
5 tstg
3
2
1.0
7
5 tf
3
2
VCC = 200V
www.DataSheet4U.com
0.1
7
5
IC / IB1=6
IB2/ IB1=2.5
R load
7 0.1 2 3
5 7 1.0
2 3 57
Collector Current, IC – A
10
23
100
7
5
ICP
3 IC
2
10
7
5
3
2
Forward Bias A S O
PC =75W
3001µ0s0µs
1.0
7
5
3
2
0.1
7
DC operation
5
3
2
0.01
Ta=25°C
Single pulse
1.0 2 3 5 7 10
2 3 5 7 100 2 3
Collector-to-Emitter Voltage, VCE – V
5 7 1000
PC - Ta
4.0
3.0
2.0 No heat sink
1.0
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – °C
SW Time - IB2
10
7
5
VCC = 200V
IC=12A
tstg IB1=2A
3 R load
2
1.0
7
5
3
2
0.1
7
7 0.1
2 3 5 7 1.0
2 3 5 7 10
Base Current, IB2 – A
2
Reverse Bias A S O
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
L =100µH
5 IB2 = -5A
3 Tc = 25°C
2 Single pulse
0.01
1.0 2 3 5 7 10
2 3 5 7 100 2 3 5 7 1000
Collector-to-Emitter Voltage, VCE – V
23
PC - Tc
80
75
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc – °C
No.5957–3/4






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