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Rectifier Diode. 5SDD33L5500 Datasheet

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Rectifier Diode. 5SDD33L5500 Datasheet






5SDD33L5500 Diode. Datasheet pdf. Equivalent




5SDD33L5500 Diode. Datasheet pdf. Equivalent





Part

5SDD33L5500

Description

Rectifier Diode



Feature


VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 5500 3480 5470 46×103 0.94 0.14 7 V A A A V mΩ Rectifier Diode 5SD D 33L5500 Doc. No. 5SYA1168-00 March 05 • Patented free-floating silicon te chnology • Very low on-state losses Optimum www.DataSheet4U.com power ha ndling capability Blocking Maximum rat ed values 1) Parameter Repetitive peak reverse voltage Non-repeti.
Manufacture

ABB

Datasheet
Download 5SDD33L5500 Datasheet


ABB 5SDD33L5500

5SDD33L5500; tive peak reverse voltage Characteristic values Symbol Conditions VRRM VRSM f = 50 Hz, tp = 10ms, Tj = 0...150°C f = 5 Hz, tp = 10ms, Tj = 0...150°C Valu e 5000 5500 Unit V V Parameter Max. ( reverse) leakage current Symbol Condit ions IRRM VRRM, Tj = 150°C min typ max 400 Unit mA Mechanical data Maxim um rated values 1) Parameter Mounting force Acceleration Ac.


ABB 5SDD33L5500

celeration Characteristic values Symbol Conditions FM a a Device unclamped Dev ice clamped min 63 typ 70 max 77 50 100 Unit kN m/s m/s 2 2 Parameter Wei ght Housing thickness Surface creepage distance Symbol Conditions m H DS FM = 70 kN, Ta = 25 °C min 26.0 35 typ max 1.45 26.6 Unit kg mm mm mm Air st rike distance Da 14 1) Maximum rated va lues indicate limit.


ABB 5SDD33L5500

s beyond which damage to the device may occur ABB Switzerland Ltd, Semiconduct ors reserves the right to change specif ications without notice. 5SDD 33L5500 On-state Maximum rated values 1) Para meter Max. average on-state current Max . RMS on-state current Max. peak non-re petitive surge current Limiting load in tegral Max. peak non-repetitive surge c urrent Limiting lo.

Part

5SDD33L5500

Description

Rectifier Diode



Feature


VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 5500 3480 5470 46×103 0.94 0.14 7 V A A A V mΩ Rectifier Diode 5SD D 33L5500 Doc. No. 5SYA1168-00 March 05 • Patented free-floating silicon te chnology • Very low on-state losses Optimum www.DataSheet4U.com power ha ndling capability Blocking Maximum rat ed values 1) Parameter Repetitive peak reverse voltage Non-repeti.
Manufacture

ABB

Datasheet
Download 5SDD33L5500 Datasheet




 5SDD33L5500
VRSM =
IF(AV)M =
IF(RMS) =
IFSM =
VF0 =
rF =
5500 V
3480 A
5470 A
46×103 A
0.94 V
0.147 m
Rectifier Diode
5SDD 33L5500
Patented free-floating silicon technology
Very low on-state losses
www.DataSheet4UO.copmtimum power handling capability
Doc. No. 5SYA1168-00 March 05
Blocking
Maximum rated values 1)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Symbol Conditions
VRRM
f = 50 Hz, tp = 10ms, Tj = 0...150°C
VRSM
f = 5 Hz, tp = 10ms, Tj = 0...150°C
Characteristic values
Parameter
Max. (reverse) leakage current
Symbol Conditions
IRRM
VRRM, Tj = 150°C
min
typ
Value
5000
5500
Unit
V
V
max Unit
400 mA
Mechanical data
Maximum rated values 1)
Parameter
Mounting force
Acceleration
Acceleration
Symbol Conditions
FM
a Device unclamped
a Device clamped
min
63
typ
70
max
77
50
100
Unit
kN
m/s2
m/s2
Characteristic values
Parameter
Symbol Conditions
min typ
Weight
m
Housing thickness
Surface creepage distance
H
FM = 70 kN, Ta = 25 °C
26.0
DS 35
Air strike distance
Da
14
1) Maximum rated values indicate limits beyond which damage to the device may occur
max
1.45
26.6
Unit
kg
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.




 5SDD33L5500
On-state
Maximum rated values 1)
Parameter
Symbol Conditions
Max. average on-state
current
IF(AV)M 50 Hz, Half sine wave, TC = 90 °C
Max. RMS on-state current IF(RMS)
Max. peak non-repetitive
surge current
Limiting load integral
IFSM
I2t
tp = 10 ms, Tj = 150°C,
VR = 0 V
Max. peak non-repetitive
surge current
Limiting load integral
IFSM
I2t
tp = 8.3 ms, Tj = 150°C,
VR = 0 V
www.DataSheeCt4hUa.craomcteristic values
Parameter
On-state voltage
Threshold voltage
Slope resistance
Symbol Conditions
VF IF = 5000 A, Tj = 150°C
V(T0)
rT
Tj = 150°C
IT = 3000...8000 A
5SDD 33L5500
min typ max Unit
3480 A
5470 A
46×103 A
10.6×106 A2s
49.2×103 A
10.06×106 A2s
min typ max Unit
1.68 V
0.94 V
0.147 m
Switching
Characteristic values
Parameter
Recovery charge
Symbol Conditions
Qrr diF/dt = -10 A/µs, VR = 200 V
IFRM = 4000 A, Tj = 150°C
min typ max Unit
10000 µAs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1168-00 March 05
page 2 of 6




 5SDD33L5500
Thermal
Maximum rated values 1)
Parameter
Symbol Conditions
Operating junction
temperature range
Tvj
Storage temperature range Tstg
Characteristic values
Parameter
Symbol Conditions
Thermal resistance junction Rth(j-c)
to case
Double-side cooled
Fm = 63...77 kN
Rth(j-c)A Anode-side cooled
Fm = 63...77 kN
Rth(j-c)C
www.DataSheeTt4hUe.crommal resistance case to Rth(c-h)
heatsink
Rth(c-h)
Cathode-side cooled
Fm = 63...77 kN
Double-side cooled
Fm = 63...77 kN
Single-side cooled
Fm = 63...77 kN
Analytical function for transient thermal
impedance:
5SDD 33L5500
min typ max Unit
0 150 °C
-40 150 °C
min typ max Unit
7 K/kW
14 K/kW
14 K/kW
1.5 K/kW
3 K/kW
n
Zth(j-c)(t) = R th i (1- e-t/τi )
i=1
i 1 2 34
Rth i(K/kW) 4.701
1.401
0.611 0.298
τi(s) 0.5463 0.0746 0.0087 0.0021
Fig. 1 Transient thermal impedance junction-to-
case.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1168-00 March 05
page 3 of 6






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