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Rectifier Diode. 5SDD38H5000 Datasheet

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Rectifier Diode. 5SDD38H5000 Datasheet






5SDD38H5000 Diode. Datasheet pdf. Equivalent




5SDD38H5000 Diode. Datasheet pdf. Equivalent





Part

5SDD38H5000

Description

Rectifier Diode



Feature


VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 5000 3810 5990 45×103 0.903 0.1 36 V A A A V mΩ Rectifier Diode 5S DD 38H5000 Doc. No. 5SYA1177-00 Feb. 06 • Optimum power handling capability • Very low on-state losses www.DataS heet4U.com Blocking Maximum rated valu es Note 1 Parameter Repetitive peak re verse voltage Non-repetitive peak rever se voltage Characteristic.
Manufacture

ABB

Datasheet
Download 5SDD38H5000 Datasheet


ABB 5SDD38H5000

5SDD38H5000; values Symbol Conditions VRRM VRSM f = 50 Hz, tp = 10ms, Tj = -40...160°C f = 50 Hz, tp = 10ms, Tj = -40...160°C m in typ Value 5000 5000 max 110 Unit V V Unit mA Parameter Max. (reverse) le akage current Symbol Conditions IRRM V RRM, Tj = 160°C Derating factor of 0. 13% per °C is applicable for Tj below 0 °C. Mechanical data Maximum rated v alues Note 1 Parameter.


ABB 5SDD38H5000

Mounting force Acceleration Acceleratio n Characteristic values Symbol Conditi ons FM a a Device unclamped Device clam ped min 45 typ 50 max 55 50 100 Uni t kN m/s m/s 2 2 Parameter Weight Hous ing thickness Surface creepage distance Air strike distance Symbol Conditions m H DS Da FM = 50 kN, Ta = 25 °C min 25.5 40 20 typ 0.9 max 26.5 Unit kg mm mm mm Note 1 M.


ABB 5SDD38H5000

aximum rated values indicate limits beyo nd which damage to the device may occur ABB Switzerland Ltd, Semiconductors r eserves the right to change specificati ons without notice. 5SDD 38H5000 On-s tate Maximum rated values Note 1 Param eter Max. average on-state current Max. RMS on-state current Max. peak non-rep etitive surge current Limiting load int egral Max. peak no.

Part

5SDD38H5000

Description

Rectifier Diode



Feature


VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 5000 3810 5990 45×103 0.903 0.1 36 V A A A V mΩ Rectifier Diode 5S DD 38H5000 Doc. No. 5SYA1177-00 Feb. 06 • Optimum power handling capability • Very low on-state losses www.DataS heet4U.com Blocking Maximum rated valu es Note 1 Parameter Repetitive peak re verse voltage Non-repetitive peak rever se voltage Characteristic.
Manufacture

ABB

Datasheet
Download 5SDD38H5000 Datasheet




 5SDD38H5000
VRSM =
IF(AV)M =
IF(RMS) =
IFSM =
VF0 =
rF =
5000 V
3810 A
5990 A
45×103 A
0.903 V
0.136 m
Rectifier Diode
5SDD 38H5000
Optimum power handling capability
Very low on-state losses
Doc. No. 5SYA1177-00 Feb. 06
www.DataSheet4U.com
Blocking
Maximum rated values Note 1
Parameter
Symbol Conditions
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Characteristic values
Parameter
VRRM
VRSM
f = 50 Hz, tp = 10ms, Tj = -40...160°C
f = 50 Hz, tp = 10ms, Tj = -40...160°C
Symbol Conditions
min typ
Max. (reverse) leakage current
IRRM
Derating factor of 0.13% per °C is applicable for Tj below 0 °C.
VRRM, Tj = 160°C
Mechanical data
Maximum rated values Note 1
Parameter
Symbol Conditions
min typ
Mounting force
Acceleration
FM
a Device unclamped
45 50
Acceleration
a Device clamped
Value
5000
5000
Unit
V
V
max Unit
110 mA
max
55
50
100
Unit
kN
m/s2
m/s2
Characteristic values
Parameter
Weight
Housing thickness
Surface creepage distance
Air strike distance
Symbol Conditions
m
H FM = 50 kN, Ta = 25 °C
DS
Da
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
min
25.5
40
20
typ
0.9
max
26.5
Unit
kg
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.




 5SDD38H5000
On-state
Maximum rated values Note 1
Parameter
Symbol Conditions
Max. average on-state
current
IF(AV)M 50 Hz, Half sine wave, TC = 85 °C
Max. RMS on-state current IF(RMS)
Max. peak non-repetitive
surge current
Limiting load integral
IFSM
I2t
tp = 10 ms, Tj = 160°C,
VR = 0 V
Max. peak non-repetitive
surge current
Limiting load integral
IFSM
I2t
tp = 8.3 ms, Tj = 160°C,
VR = 0 V
www.DataSheeCt4hUa.craomcteristic values
Parameter
On-state voltage
Threshold voltage
Slope resistance
Symbol Conditions
VF IF = 4000 A, Tj = 160°C
V(T0)
rT
Tj = 160°C
IT = 6000...18000 A
5SDD 38H5000
min typ max Unit
3810 A
5990 A
45×103 A
9.6×106 A2s
48×103 A
10.1×106 A2s
min typ max Unit
1.43 V
0.903 V
0.136 m
Switching
Characteristic values
Parameter
Recovery charge
Symbol Conditions
Qrr diF/dt = -30 A/µs, VR = 100 V
IFRM = 2000 A, Tj = 160°C
min typ max Unit
9000
µAs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1177-00 Feb. 06
page 2 of 6




 5SDD38H5000
Thermal
Maximum rated values Note 1
Parameter
Symbol Conditions
Operating junction
temperature range
Tvj
Storage temperature range Tstg
Characteristic values
Parameter
Symbol Conditions
Thermal resistance junction Rth(j-c)
to case
Double-side cooled
Fm = 45...55 kN
Rth(j-c)A Anode-side cooled
Fm = 45...55 kN
Rth(j-c)C
www.DataSheeTt4hUe.crommal resistance case to Rth(c-h)
heatsink
Rth(c-h)
Cathode-side cooled
Fm = 45...55 kN
Double-side cooled
Fm = 45...55 kN
Single-side cooled
Fm = 45...55 kN
Analytical function for transient thermal
impedance:
n
Zth(j-c)(t) = R th i (1- e-t/τi )
i=1
i 1 2 34
Rth i(K/kW) 4.533
2.255
0.868 0.345
τi(s) 0.4406 0.1045 0.0092 0.0022
9
8
7
6
5
4
3
2
1
0
0,001
5SDD 38H5000
min typ max Unit
-40 160 °C
-40 160 °C
min typ max Unit
8 K/kW
14.5 K/kW
18.0 K/kW
2.5 K/kW
5.0 K/kW
0,01 0,1
1
Square w ave pulse duration t d ( s )
10
Fig. 1 Transient thermal impedance junction-to-case
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1177-00 Feb. 06
page 3 of 6






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