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POWER MOSFET. 2SK3322 Datasheet

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POWER MOSFET. 2SK3322 Datasheet






2SK3322 MOSFET. Datasheet pdf. Equivalent




2SK3322 MOSFET. Datasheet pdf. Equivalent





Part

2SK3322

Description

SWITCHING N-CHANNEL POWER MOSFET



Feature


DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3322 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Chann el DMOS FET device that www.DataSheet4U .com ORDERING INFORMATION PART NUMBER 2SK3322 2SK3322-S 2SK3322-ZJ PACKAGE TO -220AB (MP-25) TO-262 TO-263(MP-25ZJ) T O-263(MP-25ZK) features a low gate cha rge and excellent switching characteris tics, and designed.
Manufacture

NEC

Datasheet
Download 2SK3322 Datasheet


NEC 2SK3322

2SK3322; for high voltage applications such as s witching power supply, AC adapter. ★ 2SK3322-ZK FEATURES ★ • Low gate charge : QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.5 A) • Gate voltag e rating : ±30 V • Low on-state resi stance : RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.8 A) • Avalanche capabil ity ratings • Surface mount package a vailable ABSOLUTE MAXIMUM RATINGS .


NEC 2SK3322

(TA = 25°C) Drain to Source Voltage (VG S = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Dr ain Current (pulse) Note1 VDSS VGSS ID (DC) ID(pulse) PT1 PT2 Tch Tstg 600 ± 30 ±5.5 ±20 1.5 65 150 −55 to +150 4.0 10.7 V V A A W W °C °C A mJ Tot al Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperat.


NEC 2SK3322

ure Single Avalanche Current Single Aval anche Energy Note2 Note2 IAS EAS Note s 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 . Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V The inform ation contained in this document is bei ng issued in advance of the production cycle for the product. The parameters f or the product may change before final production or NEC Electronic.

Part

2SK3322

Description

SWITCHING N-CHANNEL POWER MOSFET



Feature


DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3322 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3322 is N-Chann el DMOS FET device that www.DataSheet4U .com ORDERING INFORMATION PART NUMBER 2SK3322 2SK3322-S 2SK3322-ZJ PACKAGE TO -220AB (MP-25) TO-262 TO-263(MP-25ZJ) T O-263(MP-25ZK) features a low gate cha rge and excellent switching characteris tics, and designed.
Manufacture

NEC

Datasheet
Download 2SK3322 Datasheet




 2SK3322
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3322
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3322 is N-Channel DMOS FET device that
www.DataSheet4U.com
features a low gate charge and excellent switching
characteristics, and designed for high voltage
applications such as switching power supply, AC
adapter.
ORDERING INFORMATION
PART NUMBER
2SK3322
2SK3322-S
2SK3322-ZJ
2SK3322-ZK
PACKAGE
TO-220AB (MP-25)
TO-262
TO-263(MP-25ZJ)
TO-263(MP-25ZK)
FEATURES
Low gate charge :
QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.5 A)
Gate voltage rating : ±30 V
Low on-state resistance :
RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 2.8 A)
Avalanche capability ratings
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C)
PT1
Total Power Dissipation (TC = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
600
±30
±5.5
±20
1.5
65
150
55 to +150
4.0
10.7
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 , VGS = 20 0 V
V
V
A
A
W
W
°C
°C
A
mJ
The information contained in this document is being issued in advance of the production cycle for the
product. The parameters for the product may change before final production or NEC Electronics
Corporation, at its own discretion, may withdraw the product prior to its production.
Not all products and/or types are availabe in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14114EJ2V0DS00 (2nd edition)
Date Published August 2003 NS CP(K)
Printed in Japan
The mark shows major revised points.
1999, 2000




 2SK3322
2SK3322
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 600 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±30 V, VDS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 2.8 A
VGS = 10 V, ID = 2.8 A
Input Capacitance
Ciss VDS = 10 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
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Turn-on Delay Time
Crss
td(on)
f = 1 MHz
VDD = 150 V, ID = 2.8 A,
Rise Time
tr VGS = 10 V,
Turn-off Delay Time
td(off)
RG = 10
Fall Time
tf
Total Gate Charge
QG VDD = 450 V,
Gate to Source Charge
QGS VGS = 10 V,
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 5.5 A
IF = 5.5 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 5.5 A, VGS = 0 V,
Qrr di/dt = 50 A/µs
Note Pulsed
MIN.
2.5
1.0
TYP.
1.7
550
115
13
12
10
35
12
15
4
4.4
1.0
1.6
5.3
MAX.
100
±10
3.5
2.2
UNIT
µA
µA
V
S
pF
pF
pF
Ns
ns
ns
ns
nC
nC
nC
V
µs
µC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VGS 90%
ID 90%
ID
Wave Form
0 10%
td(on)
ID
tr td(off)
90%
10%
tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D14114EJ2V0DS




 2SK3322
TYPICAL CHARACTERISTICS (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
10
VGS = 10 V
8.0 V
6.0 V
5
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0
0 10 20 30 40 50
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
5
VDS = 10 V
ID = 1 mA
4
3
2
1
0
50 0
50 100 150
Tch - Channel Temperature - ˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
3
Pulsed
ID = 4.0 A
2 2.8 A
1
0
0 5 10 15
VGS - Gate to Source Voltage - V
2SK3322
FORWARD TRANSFER CHARACTERISTICS
100 VDS = 10 V
Pulsed
10
1
Tch = 125˚C
75˚C
25˚C
0.1 25˚C
0.01
0
5 10
VGS - Gate to Source Voltage - V
15
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
Tch = 25˚C
25˚C
75˚C
125˚C
1
VDS = 10 V
0.1 Pulsed
0.1
1
ID - Drain Current - A
10
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
3
VGS = 10 V
20 V
2
1
0
0.1 1
Pulsed
10 100
ID - Drain Current - A
Data Sheet D14114EJ2V0DS
3






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