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Plastic-Encapsulated Transistors. 3DD13001 Datasheet

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Plastic-Encapsulated Transistors. 3DD13001 Datasheet






3DD13001 Transistors. Datasheet pdf. Equivalent




3DD13001 Transistors. Datasheet pdf. Equivalent





Part

3DD13001

Description

Plastic-Encapsulated Transistors



Feature


Transys Electronics L I M I T E D TO-25 1 Plastic-Encapsulated Transistors 3DD1 3001 FEATURES Power dissipation PCM: 1. 2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3 EMITTER TRANSISTOR (NPN) TO-251 Data Sheet4U.com Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction tempe rature range TJ, Tstg: -55℃ to +150 ELECTRICAL CHARACTERIS.
Manufacture

TRANSYS Electronics

Datasheet
Download 3DD13001 Datasheet


TRANSYS Electronics 3DD13001

3DD13001; TICS (Tamb=25℃ Parameter Collector-bas e breakdown voltage Collector-emitter b reakdown voltage Emitter-base breakdown voltage Collector cut-off current Coll ector cut-off current Emitter cut-off c urrent Symbol V(BR)CBO V(BR)CEO V(BR)EB O ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation vo ltage Base-emitter saturation voltage B ase-emitter voltage .


TRANSYS Electronics 3DD13001

VCE(sat) VBE(sat) VBE 1 2 3 unless o therwise specified) Test conditions MIN 600 400 7 100 200 100 10 5 0.5 1.2 1.1 V V V 40 TYP MAX UNIT V V V µA µA µ A Ic= 100µA , IE=0 IC= 1 mA , IB=0 IE = 100 µA, IC=0 VCB= 600 V , IE=0 VCE= 400 V , IB=0 VEB= 7 V , IC=0 VCE= 20 V , IC= 20mA VCE= 10V, IC= 0.25 mA IC= 50 mA, IB= 10 mA IC= 50 mA, IB= 10mA IE= 1 00 mA, VCE= 20 V, IC=20.


TRANSYS Electronics 3DD13001

mA Transition frequency fT f = 1MHz IC =50mA, IB1=-IB2=5mA, 8 MHz Fall time Storage time tf tS 0.3 1.5 µs µs VCC=45V CLASSIFICATION OF hFE(1) Rank Range 10-15 15-20 20-25 25-30 30-35 35 -40 www.DataSheet4U.com .

Part

3DD13001

Description

Plastic-Encapsulated Transistors



Feature


Transys Electronics L I M I T E D TO-25 1 Plastic-Encapsulated Transistors 3DD1 3001 FEATURES Power dissipation PCM: 1. 2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3 EMITTER TRANSISTOR (NPN) TO-251 Data Sheet4U.com Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction tempe rature range TJ, Tstg: -55℃ to +150 ELECTRICAL CHARACTERIS.
Manufacture

TRANSYS Electronics

Datasheet
Download 3DD13001 Datasheet




 3DD13001
Transys
Electronics
LIMITED
TO-251 Plastic-Encapsulated Transistors
3DD13001
FEATURES
Power dissipation
TRANSISTOR (NPN)
DataSheet4U.com
PCM:
1.2 W (Tamb=25)
Collector current
ICM: 0.2
Collector-base voltage
A
V(BR)CBO:
600 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
TO-251
1. BASE
2. COLLECTOR
3EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA , IE=0
600
Collector-emitter breakdown voltage V(BR)CEO
IC= 1 mA , IB=0
400
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 µA, IC=0
7
Collector cut-off current
ICBO VCB= 600 V , IE=0
100
Collector cut-off current
Emitter cut-off current
ICEO VCE= 400 V , IB=0
IEBO VEB= 7 V , IC=0
200
100
DC current gain
hFE(1)
hFE(2)
VCE= 20 V, IC= 20mA
VCE= 10V, IC= 0.25 mA
10
5
40
Collector-emitter saturation voltage
VCE(sat) IC= 50mA, IB= 10 mA
0.5
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Fall time
Storage time
VBE(sat)
VBE
fT
tf
tS
IC= 50 mA, IB= 10mA
IE= 100 mA,
VCE= 20 V, IC=20mA
f = 1MHz
IC=50mA,
IB1=-IB2=5mA,
VCC=45V
8
1.2
1.1
0.3
1.5
UNIT
V
V
V
µA
µA
µA
V
V
V
MHz
µs
µs




 3DD13001
CLASSIFICATION OF hFE(1)
Rank
Range
10-15
15-20
20-25
25-30
30-35
35-40
www.DataSheet4U.com










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