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Plastic-Encapsulated Transistors. 3DD13002 Datasheet

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Plastic-Encapsulated Transistors. 3DD13002 Datasheet






3DD13002 Transistors. Datasheet pdf. Equivalent




3DD13002 Transistors. Datasheet pdf. Equivalent





Part

3DD13002

Description

Plastic-Encapsulated Transistors



Feature


Transys Electronics L I M I T E D TO-25 1 Plastic-Encapsulated Transistors 3DD 13002 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-251 w.DataSheet4U .com 1.25 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER Collector current ICM: 1 A Collector-base voltage V(BR)C BO: 600 V Operating and storage junctio n temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHAR.
Manufacture

TRANSYS Electronics

Datasheet
Download 3DD13002 Datasheet


TRANSYS Electronics 3DD13002

3DD13002; ACTERISTICS (Tamb=25℃ Parameter Collec tor-base breakdown voltage Collector-em itter breakdown voltage Emitter-base br eakdown voltage Collector cut-off curre nt Emitter cut-off current Symbol V(BR) CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitte r saturation voltage Base-emitter satur ation voltage Transition frequency Fall time Storage time V.


TRANSYS Electronics 3DD13002

CE(sat) VBE(sat) fT tf ts 1 2 3 unle ss otherwise specified) Test conditions MIN 600 400 6 100 100 9 5 0.8 1.1 5 0. 5 2.5 V V MHz µs µs 40 TYP MAX UNIT V V V µA µA Ic= 100µA, IE=0 Ic=1mA, IB=0 IE= 100µA, IC=0 VCB= 600V, IE=0 V EB= 6V, IC=0 VCE= 10V, IC= 200 mA VCE= 10V, IC=250 µA IC=200mA, IB= 40 mA IC= 200mA, IB= 40 mA VCE=10V, Ic=100mA f =1 MHz IC=1A, IB1=-IB2=0.2A .


TRANSYS Electronics 3DD13002

VCC=100V CLASSIFICATION OF hFE(2) Rank Range 9-15 15-20 20-25 25-30 30-35 35-4 0 .

Part

3DD13002

Description

Plastic-Encapsulated Transistors



Feature


Transys Electronics L I M I T E D TO-25 1 Plastic-Encapsulated Transistors 3DD 13002 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-251 w.DataSheet4U .com 1.25 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER Collector current ICM: 1 A Collector-base voltage V(BR)C BO: 600 V Operating and storage junctio n temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHAR.
Manufacture

TRANSYS Electronics

Datasheet
Download 3DD13002 Datasheet




 3DD13002
Transys
Electronics
LIMITED
TO-251 Plastic-Encapsulated Transistors
3DD13002 TRANSISTOR (NPN)
FEATURES
Power dissipation
w.DataSheet4U.com
PCM:
1.25 W (Tamb=25)
Collector current
ICM: 1 A
Collector-base voltage
V(BR)CBO:
600 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
TO-251
1. BASE
2. COLLECTOR
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
tf
ts
Ic= 100µA, IE=0
Ic=1mA, IB=0
IE= 100µA, IC=0
VCB= 600V, IE=0
VEB= 6V, IC=0
VCE= 10V, IC= 200 mA
VCE= 10V, IC=250 µA
IC=200mA, IB= 40 mA
IC=200mA, IB= 40 mA
VCE=10V, Ic=100mA
f =1MHz
IC=1A, IB1=-IB2=0.2A
VCC=100V
600
400
6
9
5
5
V
V
V
100 µA
100 µA
40
0.8 V
1.1 V
MHz
0.5 µs
2.5 µs
CLASSIFICATION OF hFE(2)
Rank
Range
9-15
15-20
20-25
25-30
30-35
35-40














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