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NPN Transistors. 3DD13002B Datasheet

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NPN Transistors. 3DD13002B Datasheet






3DD13002B Transistors. Datasheet pdf. Equivalent




3DD13002B Transistors. Datasheet pdf. Equivalent





Part

3DD13002B

Description

Switch Mode NPN Transistors



Feature


3DD13002B Switch Mode NPN Transistors TO -92 www.DataSheet4U.com 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE M AXIMUM RATINGS (Ta=25 C) Rating Collect or-Emitter Voltage Collector-Base Volta ge Emitter-Base VOltage Collector Curre nt Total Device Dissipation T A =25 C J unction Temperature Storage, Temperatur e Symbol VCEO VCBO VEBO IC PD Tj Tstg V alue 400 600 6.0 1.
Manufacture

Weitron Technology

Datasheet
Download 3DD13002B Datasheet


Weitron Technology 3DD13002B

3DD13002B; .0 1.0 150 -55 to +150 Unit Vdc Vdc Vdc Adc W C C ELECTRICAL CHARACTERISTICS C haracteristics Collector-Emitter Breakd own Voltage (IC= 1.0 mAdc, IB=0) Collec tor-Base Breakdown Voltage (IC= 100 uAd c, IE=0) Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current (VCB= 600 Vdc, IE=0) Emitter Cu toff Current (VEB= 6.0Vd c, IC =0) Symb ol V(BR)CEO V(BR)C.


Weitron Technology 3DD13002B

BO V(BR)EBO ICBO IEBO Min 400 600 6.0 Ma x 100 100 Unit Vdc Vdc Vdc uAdc uAdc W EITRON http://www.weitron.com.tw 3DD13 002B Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min WE IT R ON Max Unit On Characteristics DC Current Gain (IC= 100 mAdc, VCE=10Vdc) www.Dat aSheet4U.com (IC= 200 mAdc, VCE= 10Vdc) (IC= 10 mAdc, VCE.


Weitron Technology 3DD13002B

= 10Vdc) Collector-Emitter Saturation Vo ltage (IC= 200 mAdc, IB= 40 mAdc) Base- Emitter Saturation Voltage (IC= 200 mAd c, IB= 40 mAdc) Current-Gain-Bandwidth Product (IC= 100 mAdc, VCE= 10 Vdc, f=1 .0MHz) hFE(1) hFE(2) hFE(3) VCE(sat) VB E(sat) fT 20 9 6 - 25 40 . 0.8 1.1 - Vdc Vdc - 5.0 - MHz Switching Cha racteristics Storage Time Fall Time VCC =100V, IC =1A IB1.

Part

3DD13002B

Description

Switch Mode NPN Transistors



Feature


3DD13002B Switch Mode NPN Transistors TO -92 www.DataSheet4U.com 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE M AXIMUM RATINGS (Ta=25 C) Rating Collect or-Emitter Voltage Collector-Base Volta ge Emitter-Base VOltage Collector Curre nt Total Device Dissipation T A =25 C J unction Temperature Storage, Temperatur e Symbol VCEO VCBO VEBO IC PD Tj Tstg V alue 400 600 6.0 1.
Manufacture

Weitron Technology

Datasheet
Download 3DD13002B Datasheet




 3DD13002B
Switch Mode NPN Transistors
www.DataSheet4U.com
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Total Device Dissipation TA=25 C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj
Tstg
3DD13002B
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
1
2
3
Value
400
600
6.0
1.0
1.0
150
-55 to +150
Unit
Vdc
Vdc
Vdc
Adc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0)
Collector Cutoff Current (VCB= 600 Vdc, IE=0)
Emitter Cutoff Current (VEB= 6.0Vdc, IC=0)
Symbol Min Max Unit
V(BR)CEO
400
-
Vdc
V(BR)CBO
V(BR)EBO
600
6.0
-
-
Vdc
Vdc
ICBO
IEBO
- 100 uAdc
- 100 uAdc
WEITRON
http://www.weitron.com.tw




 3DD13002B
3DD13002B
WE ITR ON
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
On Characteristics
DC Current Gain
www.DataS(IhCe=et41U0.0commAdc, VCE=10Vdc)
(IC= 200 mAdc, VCE= 10Vdc)
(IC= 10 mAdc, VCE= 10Vdc)
Collector-Emitter Saturation Voltage
(IC= 200 mAdc, IB= 40 mAdc)
Base-Emitter Saturation Voltage
(IC= 200 mAdc, IB= 40 mAdc)
Current-Gain-Bandwidth Product
(IC= 100 mAdc, VCE= 10 Vdc, f=1.0MHz)
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
Min
20
9
6
-
-
5.0
Max Unit
25 -
40 -
.-
0.8 Vdc
1.1 Vdc
- MHz
Switching Characteristics
Storage Time
Fall Time
VCC=100V, IC =1A
IB1=-IB2=200mA
ts - 2.5 us
tf - 0.5 us
Classification of hFE(2)
Rank
Range
9-15
15-20
20-25
25-30
30-35
35-40
WEITRON
http://www.weitron.com.tw




 3DD13002B
3DD13002B
WE ITR ON
80
60
40
30 25 C
20
VCE =2V
www.DataSheet4U.com
10
8
6
4
0.02 0.03 0.050.07 0.1
0.2 0.3 0.5 0.7 1
IC , COLLECTOR CURRENT(AMP)
FIG.1 DC Current Gain
2
1.4
VBE(sat) @IC/IB =5
1.2
1
25 C
0.8
0.6
0.4
0.020.03 0.050.07 0.1
0.2 0.3 0.5 0.7 1
IC , COLLECTOR CURRENT(AMP)
FIG.3 Base-Emitter Voltage
2
10
5
2
1
0.5
0.2 TC=25 C
0.1
0.0
5
0.02
0.01
5 10 20
50 100 200 300 500
VCE ,COLLECTOR-EMITTER VOLTAGE(V)
FIG.5 Active Region Safe Operation Area
WEITRON
http://www.weitron.com.tw
2
1.6
IC=0.2A
1.2
TJ =25 C
0.8
0.4
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1
IB , BASE CURRENT(AMP)
FIG.2 Collector Saturation Region
2
3.5
3.0
2.5 IC/IB =5
2.0
1.5
1.0
0.5
0
0.01
0.1
0.5 1
2
IC, COLLECTOR CURRENT(AMP)
FIG.4 Collector-Emitter Saturation Region
1.6
1.2
0.8
TJ <_ 100 C
IB1 =1A
0.4 VBE(off) =6V
5V
3V
0 1.5V
0 100 200 300 400 500 600 700 800
VCE ,COLLECTOR-EMITTER CLAMP VOLTAGE(V)
FIG.6 Reverse Bias Safe Operating Area






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