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TRANSISTOR. 3DD13003 Datasheet

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TRANSISTOR. 3DD13003 Datasheet






3DD13003 TRANSISTOR. Datasheet pdf. Equivalent




3DD13003 TRANSISTOR. Datasheet pdf. Equivalent





Part

3DD13003

Description

TRANSISTOR



Feature


JIANGSU CHANGJIANG ELECTRONICS TECHNOLOG Y CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13003 FEATURES TRANSIS TOR ( NPN ) TO-220 1. BASE 2. COLLECTO R 3. EMITTER · power switching applic ations www.DataSheet4U.com MAXIMUM RAT INGS* TA=25℃ unless otherwise noted S ymbol VCBO VCEO VEBO IC PC TJ, Tstg Par ameter Collector-Base Voltage Collector -Emitter Voltage Emit.
Manufacture

Jiangsu Changjiang Electronics

Datasheet
Download 3DD13003 Datasheet


Jiangsu Changjiang Electronics 3DD13003

3DD13003; ter-Base Voltage Collector Current -Cont inuous Collector Dissipation Junction a nd Storage Temperature Value 700 400 9 1.5 2 -55-150 Units V V V A W ℃ 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown volt age Collector-emitter breakdown voltage Emitter-base breakdown voltage Collect or cut-off current Collector cut-off cu rrent Emitter cut-off .


Jiangsu Changjiang Electronics 3DD13003

current DC current gain hFE(2) Colle ctor-emitter saturation voltage Base-em itter saturation voltage Base-emitter v oltage Transition frequency Fall time S torage time VCE(sat) VBE(sat) VBE fT tf ts Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO ICEO IEBO hFE(1) unless Test otherwise specified) MIN 700 400 9 100 0 500 1000 8 5 1 1.2 3 5 0.5 2.5 V V V MHz µs µs 40 TYP MAX UNIT .


Jiangsu Changjiang Electronics 3DD13003

V V V µA µA µA conditions Ic= 1000u A, IE=0 Ic= 10 mA, IE= 1mA, IB=0 IC=0 VCB= 700V , IE=0 VCE= 400V, VEB= 9 V, B =0 IC=0 VCE= 5 V, IC= 0.5 A VCE= 5 V, IC= 1.5A IC=1000mA,IB= 250 mA IC=1000m A, IB= 250mA IE= 2000 mA VCE=10V,Ic=100 mA f =1MHz IC=1A, IB1=-IB2=0.2A VCC=10 0V CLASSIFICATION OF Rank Range 8-10 hFE (1) 10-15 15-20 20-25 25-30 30 -35 35-40 Typical C.

Part

3DD13003

Description

TRANSISTOR



Feature


JIANGSU CHANGJIANG ELECTRONICS TECHNOLOG Y CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13003 FEATURES TRANSIS TOR ( NPN ) TO-220 1. BASE 2. COLLECTO R 3. EMITTER · power switching applic ations www.DataSheet4U.com MAXIMUM RAT INGS* TA=25℃ unless otherwise noted S ymbol VCBO VCEO VEBO IC PC TJ, Tstg Par ameter Collector-Base Voltage Collector -Emitter Voltage Emit.
Manufacture

Jiangsu Changjiang Electronics

Datasheet
Download 3DD13003 Datasheet




 3DD13003
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13003 TRANSISTOR ( NPN )
FEATURES
TO-220
1. BASE
· power switching applications
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MAXIMUM RATINGS* TA=25unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
700 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
9V
IC Collector Current -Continuous
1.5 A
PC Collector Dissipation
2W
TJ, Tstg Junction and Storage Temperature
-55-150
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
123
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VBE
Transition frequency
fT
Fall time
Storage time
tf
ts
Test conditions
Ic= 1000uA, IE=0
Ic= 10 mA, IB=0
IE= 1mA, IC=0
VCB= 700V , IE=0
VCE= 400V, B=0
VEB= 9 V, IC=0
VCE= 5 V, IC= 0.5 A
VCE= 5 V, IC= 1.5A
IC=1000mA,IB= 250 mA
IC=1000mA, IB= 250mA
IE= 2000 mA
VCE=10V,Ic=100mA
f =1MHz
IC=1A, IB1=-IB2=0.2A
VCC=100V
MIN TYP MAX UNIT
700 V
400 V
9V
1000
µA
500 µA
1000
µA
8 40
5
1V
1.2 V
3V
5 MHz
0.5 µs
2.5 µs
CLASSIFICATION OF hFE (1)
Rank
Range
8-10
10-15
15-20
20-25
25-30
30-35
35-40




 3DD13003
Typical Characteristics
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3DD13003










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