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NPN Transistor. 2SC5706 Datasheet

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NPN Transistor. 2SC5706 Datasheet






2SC5706 Transistor. Datasheet pdf. Equivalent




2SC5706 Transistor. Datasheet pdf. Equivalent





Part

2SC5706

Description

NPN Transistor



Feature


2SC5706 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3. EMITTER 1 2 3 Features: www.DataSheet4 U.com * Large current capacitance * Lo w collector-to-emitter saturation volta ge * High-speed switching * High allowa ble dissipation D-PAK(TO-252) Mechani cal Data: * Case : Molded Plastic * Wei ght : 0.925 grams ABSOLUTE MAXIMUM RAT INGS(Ta=25˚C) Rati.
Manufacture

Weitron Technology

Datasheet
Download 2SC5706 Datasheet


Weitron Technology 2SC5706

2SC5706; ng Collector to Base Voltage Collector t o Emitter Voltage Collector to Emitter Voltage Collector to Base Voltage Colle ctor Current Base Current Total Device Disspation TA = 25°C TC = 25°C Juncti on Temperature Storage Temperature Symb ol VCBO VCES VCEO VEBO IC(DC) IC(Pulse) IB PD Tj Tstg Value 80 80 50 6 5 7.5 1 .2 0.8 15 +150 -55 to +150 Unit V V V V A A W ˚C ˚C Device.


Weitron Technology 2SC5706

Marking 2SC5706 = 5706 WEITRON http:// www.weitron.com.tw 1/5 25-Aug-05 2SC 5706 ELECTRICAL CHARACTERISTICS Charact eristics Collector-Base Breakdown Volta ge IC=10µA, IE=0 Collector-Emitter Bre akdown Voltage IC=100µA, RBE=0 Collect or-Emitter Breakdown Voltage www.DataSh eet4U.com IC=1mA, RBE=∞ Emitter-Base Breakdown Voltage IE=10µA, IC=0 Collec tor Cut-Off Current VCB=.


Weitron Technology 2SC5706

40V, IE=0 Emitter-Cut-Off Current VEB=4 V, IC=0 Symbol BVCBO BVCES BVCEO BVEBO ICBO IEBO Min 80 80 50 6 Max Max 1 1 Un it V V V V µA µA ON CHARACTERISTICS( 1) DC Current Gain VCE=2V, IC=500mA Col lector-Emitter Saturation Voltage IC=1A , IB=50mA IC=2A, IB=100mA Base-Emitter Saturation Voltage IC=2A, IB=100mA Note 1.Pulse Test : Pulse width < 300µs, D uty cycle ≤ 20%. DYNAMI.

Part

2SC5706

Description

NPN Transistor



Feature


2SC5706 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3. EMITTER 1 2 3 Features: www.DataSheet4 U.com * Large current capacitance * Lo w collector-to-emitter saturation volta ge * High-speed switching * High allowa ble dissipation D-PAK(TO-252) Mechani cal Data: * Case : Molded Plastic * Wei ght : 0.925 grams ABSOLUTE MAXIMUM RAT INGS(Ta=25˚C) Rati.
Manufacture

Weitron Technology

Datasheet
Download 2SC5706 Datasheet




 2SC5706
NPN EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
Features:
* Large current capacitance
www.Data*ShLeoewt4Uc.coolmlector-to-emitter saturation voltage
* High-speed switching
* High allowable dissipation
Mechanical Data:
* Case : Molded Plastic
* Weight : 0.925 grams
ABSOLUTE MAXIMUM RATINGS(Ta=25˚C)
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Symbol
VCBO
VCES
VCEO
Collector to Base Voltage
Collector Current
Base Current
Total Device Disspation
Junction Temperature
TA = 25°C
TC = 25°C
Storage Temperature
VEBO
IC(DC)
IC(Pulse)
IB
PD
Tj
Tstg
Device Marking
2SC5706 = 5706
WEITRON
http://www.weitron.com.tw
1/5
2SC5706
1.BASE
2.COLLECTOR
3.EMITTER
1 23
D-PAK(TO-252)
Value
80
80
50
6
5
7.5
1.2
0.8
15
+150
-55 to +150
Unit
V
V
V
V
A
A
W
˚C
˚C
25-Aug-05




 2SC5706
2SC5706
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage
IC=10µA, IE=0
Collector-Emitter Breakdown Voltage
IC=100µA, RBE=0
Collector-Emitter Breakdown Voltage
www.DataSIhCe=et41Um.cAom, RBE=∞
Emitter-Base Breakdown Voltage
IE=10µA, IC=0
Collector Cut-Off Current
VCB=40V, IE=0
Emitter-Cut-Off Current
VEB=4V, IC=0
Symbol
BVCBO
BVCES
BVCEO
BVEBO
ICBO
IEBO
Min
80
80
50
6
-
-
Max
-
-
-
-
-
-
Max
-
-
-
-
1
1
Unit
V
V
V
V
µA
µA
ON CHARACTERISTICS(1)
DC Current Gain
VCE=2V, IC=500mA
Collector-Emitter Saturation Voltage
IC=1A, IB=50mA
IC=2A, IB=100mA
Base-Emitter Saturation Voltage
IC=2A, IB=100mA
Note 1.Pulse Test : Pulse width < 300µs, Duty cycle ≤ 20%.
hFE
VCE(sat)
VBE(sat)
200
-
-
-
DYNAMIC CHARACTERISTICS
Transition Frequency
VCE=10V, IC=500
Output Capacitance
VCB=10V, f=1MHz
fT -
Cob -
- 560 -
-
-
135
240
mV
- 1.2 V
400 - MHz
15 - pF
SWITCHING TIMES
See specified test circuit (Turn-On Time)
See specified test circuit (Storage Time)
See specified test circuit (Fall Time)
ton - 35 -
tstg - 300 - ns
tf - 20 -
WEITRON
http://www.weitron.com.tw
2/5
25-Aug-05




 2SC5706
2SC5706
Switching Time Test Circuit
PW=20µs
D.C. ≤ 1%
INPUT
VR
50Ω
IB1
IB2
RB
+
100µF
OUTPUT
+
470µF
25Ω
VBE=-5V
VCC=25V
10IB1 = -10IB2 = IC = 1A
www.DataSCheheta4rUa.ccotmeristics Curve
5
80mA 70mA
4
3
2
1
60mA
50mA
40mA
30mA
20mA
10mA
5mA
0 IB=0
0 0.4 0.8 1.0 1.2 1.4
Collector-to-Emitter Voltage, VCE(V)
FIG.1 IC - VCE
1000
Ta=75˚C
25˚C
-25˚C
VCE=2V
100
10
0.01
10000
0.1 1.0
Collector Current, IC (A)
FIG.3 hFE - IC
10
IC / IB = 50
1000
100
10
0.01
Ta=75˚C -25˚C
25˚C
0.1 1.0
Collector Current, IC (A)
FIG.5 VCE(sat) - IC
10
WEITRON
http://www.weitron.com.tw
3/5
4.0
3.5 VCE=2V
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE (V)
FIG.2 IC - VBE
1000
IC / IB = 20
100
10
0.01
10
Ta=75˚C
-25˚C 25˚C
0.1 1.0
Collector Current, IC (A)
FIG.4 VCE(sat) - IC
10
IC / IB = 50
1.0 Ta=-25˚C
75˚C
25˚C
0.1
0.01
0.1 1.0
Collector Current, IC (A)
FIG.6 VBE(sat) - IC
10
25-Aug-05






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