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Static RAM. CY62128EV30 Datasheet

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Static RAM. CY62128EV30 Datasheet
















CY62128EV30 RAM. Datasheet pdf. Equivalent













Part

CY62128EV30

Description

1-Mbit (128K x 8) Static RAM



Feature


CY62128EV30 MoBL® 1-Mbit (128K × 8) St atic RAM 1-Mbit (128K × 8) Static RAM Features ■ Very high speed: 45 ns Temperature ranges: ❐ Industrial: 40 °C to +85 °C ■ Wide voltage ra nge: 2.2 V to 3.6 V ■ Pin compatible with CY62128DV30 ■ Ultra low standby power ❐ Typical standby current: 1 µ A ❐ Maximum standby current: 4 µA Ultra low active power ❐ Typical active cur.
Manufacture

Cypress Semiconductor

Datasheet
Download CY62128EV30 Datasheet


Cypress Semiconductor CY62128EV30

CY62128EV30; rent: 1.3 mA at f = 1 MHz ■ Easy memor y expansion with CE1, CE2, and OE featu res ■ Automatic power-down when desel ected ■ Complementary metal oxide sem iconductor (CMOS) for optimum speed and power ■ Offered in Pb-free 32-pin sm all outline integrated circuit (SOIC), 32-pin thin small outline package (TSOP ) Type I, and 32-pin shrunk thin small outline package (STSOP) pa.


Cypress Semiconductor CY62128EV30

ckages Functional Description The CY621 28EV30 is a high performance CMOS stati c RAM module organized as 128K words by 8-bits. This device features advanced circuit design to provide ultra low act ive current. This is ideal for providin g More Battery Life™ (MoBL®) in port able applications such as cellular tele phones. The device also has an automati c power-down feature .


Cypress Semiconductor CY62128EV30

that significantly reduces power consump tion when addresses are not toggling. P lacing the device in standby mode reduc es power consumption by more than 99 pe rcent when deselected (CE1 HIGH or CE2 LOW). The eight input and output pins ( I/O0 through I/O7) are placed in a high impedance state when the device is des elected (CE1 HIGH or CE2 LOW), the outp uts are disabled (.




Part

CY62128EV30

Description

1-Mbit (128K x 8) Static RAM



Feature


CY62128EV30 MoBL® 1-Mbit (128K × 8) St atic RAM 1-Mbit (128K × 8) Static RAM Features ■ Very high speed: 45 ns Temperature ranges: ❐ Industrial: 40 °C to +85 °C ■ Wide voltage ra nge: 2.2 V to 3.6 V ■ Pin compatible with CY62128DV30 ■ Ultra low standby power ❐ Typical standby current: 1 µ A ❐ Maximum standby current: 4 µA Ultra low active power ❐ Typical active cur.
Manufacture

Cypress Semiconductor

Datasheet
Download CY62128EV30 Datasheet




 CY62128EV30
CY62128EV30 MoBL®
1-Mbit (128K × 8) Static RAM
1-Mbit (128K × 8) Static RAM
Features
Very high speed: 45 ns
Temperature ranges:
Industrial: –40 °C to +85 °C
Wide voltage range: 2.2 V to 3.6 V
Pin compatible with CY62128DV30
Ultra low standby power
Typical standby current: 1 µA
Maximum standby current: 4 µA
Ultra low active power
Typical active current: 1.3 mA at f = 1 MHz
Easy memory expansion with CE1, CE2, and OE features
Automatic power-down when deselected
Complementary metal oxide semiconductor (CMOS) for
optimum speed and power
Offered in Pb-free 32-pin small outline integrated circuit (SOIC),
32-pin thin small outline package (TSOP) Type I, and 32-pin
shrunk thin small outline package (STSOP) packages
Functional Description
The CY62128EV30 is a high performance CMOS static RAM
module organized as 128K words by 8-bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL®) in portable
applications such as cellular telephones. The device also has an
automatic power-down feature that significantly reduces power
consumption when addresses are not toggling. Placing the
device in standby mode reduces power consumption by more
than 99 percent when deselected (CE1 HIGH or CE2 LOW). The
eight input and output pins (I/O0 through I/O7) are placed in a
high impedance state when the device is deselected (CE1 HIGH
or CE2 LOW), the outputs are disabled (OE HIGH), or a write
operation is in progress (CE1 LOW and CE2 HIGH and WE
LOW).
To write to the device, take chip enable (CE1 LOW and CE2
HIGH) and write enable (WE) inputs LOW. Data on the eight I/O
pins is then written into the location specified on the address pin
(A0 through A16).
To read from the device, take chip enable (CE1 LOW and CE2
HIGH) and output enable (OE) LOW while forcing write enable
(WE) HIGH. Under these conditions, the contents of the memory
location specified by the address pins appear on the I/O pins.
For a complete list of related resources, click here.
Logic Block Diagram
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
CE1
CE2 WE
OE
INPUT BUFFER
128K x 8
ARRAY
COLUMN DECODER
POWER
DOWN
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 38-05579 Rev. *N
• San Jose, CA 95134-1709 • 408-943-2600
Revised September 22, 2016




 CY62128EV30
CY62128EV30 MoBL®
Contents
Pin Configuration ............................................................. 3
Product Portfolio .............................................................. 3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
Electrical Characteristics ................................................. 4
Capacitance ...................................................................... 5
Thermal Resistance .......................................................... 5
AC Test Loads and Waveforms ....................................... 5
Data Retention Characteristics ....................................... 6
Data Retention Waveform ................................................ 6
Switching Characteristics ................................................ 7
Switching Waveforms ...................................................... 8
Truth Table ...................................................................... 11
Ordering Information ...................................................... 12
Ordering Code Definitions ......................................... 12
Package Diagrams .......................................................... 13
Acronyms ........................................................................ 16
Document Conventions ................................................. 16
Units of Measure ....................................................... 16
Document History Page ................................................. 17
Sales, Solutions, and Legal Information ...................... 19
Worldwide Sales and Design Support ....................... 19
Products .................................................................... 19
PSoC®Solutions ....................................................... 19
Cypress Developer Community ................................. 19
Technical Support ..................................................... 19
Document Number: 38-05579 Rev. *N
Page 2 of 19




 CY62128EV30
CY62128EV30 MoBL®
Pin Configuration
Figure 1. 32-pin STSOP pinout [1]
Figure 2. 32-pin TSOP I pinout [1]
A11 25
A9 26
A8
A13
WE
2226 78
29
CE2
A15
30
31
VCC 32
NC 1
A16 2
AA1142
3
4
A7 5
A6 6
A5
A4
7
8
Top View
(not to scale)
24 OE
23
22
21
20
19
18
17
16
AC1E01
II//OO76
I/O5
II//OO43
GND
15
14
13
12
11
10
I/O2
IIAAA//OO102 10
9 A3
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Figure 3. 32-pin SOIC pinout [1]
Top View
Top View
(not to scale)
32 OE
31 A10
30
29
CE1
I/O7
28 I/O6
27 I/O5
26
25
24
I/O4
I/O3
GND
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VCC
31 A15
30 CE2
29 WE
28 A13
27
26
A8
A9
25 A11
24 OE
23 A10
22 CE1
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
Product Portfolio
Product
Range
CY62128EV30LL Industrial
VCC Range (V)
Min Typ [2] Max
2.2 3.0 3.6
Speed
(ns)
45
Power Dissipation
Operating ICC (mA)
f = 1 MHz
Typ [2] Max
f = fmax
Typ [2] Max
Standby ISB2 (µA)
Typ [2] Max
1.3 2.0 11 16
1
4
Notes
1. NC pins are not connected on the die.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C.
Document Number: 38-05579 Rev. *N
Page 3 of 19




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