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Commutated Thyristor. 5SHY35L4510 Datasheet

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Commutated Thyristor. 5SHY35L4510 Datasheet
















5SHY35L4510 Thyristor. Datasheet pdf. Equivalent













Part

5SHY35L4510

Description

Asymmetric Integrated Gate- Commutated Thyristor



Feature


VDRM ITGQM ITSM V(T0) rT VDC-link = = = = = = 4500 4000 32×103 1.4 0.325 280 0 V A A V mΩ V Asymmetric Integrate d GateCommutated Thyristor 5SHY 35L451 0 Doc. No. 5SYA1232-02 June 07 • Hig h snubberless turn-off rating • Optim ized for medium frequency (<1 kHz) and wide temperature range • High reliabi lity • High electromagnetic immunity • Simple control interface wi.
Manufacture

ABB

Datasheet
Download 5SHY35L4510 Datasheet


ABB 5SHY35L4510

5SHY35L4510; th status feedback • AC or DC supply v oltage • Contact factory for series c onnection www.DataSheet4U.com Blockin g Maximum rated values 1) Parameter S ymbol Conditions Rep. peak off-state vo ltage VDRM Gate Unit energized Permanen t DC voltage for VDC-link 100 FIT failu re rate of GCT Reverse voltage Characte ristic values min typ max 4500 2800 17 10 Unit V V V V Un.


ABB 5SHY35L4510

it mA Ambient cosmic radiation at sea l evel in open air. Gate Unit energized I GCT in off-state on-state VRRM Parame ter Symbol Conditions Rep. peak off-sta te current IDRM VD = VDRM, Gate Unit en ergized min typ max 50 Mechanical d ata (see Fig. 11, 12) 1) Maximum rated values Parameter Mounting force Charac teristic values Symbol Conditions Fm S ymbol Conditions D.


ABB 5SHY35L4510

p ± 0.1 mm H m Ds Da l h Anode to Gate Anode to Gate ± 1.0 mm ± 1.0 mm min 36 min 25.3 33 10 typ 40 typ 85 max 4 4 max 25.8 2.9 Unit kN Unit mm mm kg m m mm Parameter Pole-piece diameter Hou sing thickness Weight Surface creepage distance Air strike distance Length Hei ght 439 40 173 mm mm mm Width IGCT w ± 1.0 mm 1) Maximum rated values indi cate limits beyond whi.




Part

5SHY35L4510

Description

Asymmetric Integrated Gate- Commutated Thyristor



Feature


VDRM ITGQM ITSM V(T0) rT VDC-link = = = = = = 4500 4000 32×103 1.4 0.325 280 0 V A A V mΩ V Asymmetric Integrate d GateCommutated Thyristor 5SHY 35L451 0 Doc. No. 5SYA1232-02 June 07 • Hig h snubberless turn-off rating • Optim ized for medium frequency (<1 kHz) and wide temperature range • High reliabi lity • High electromagnetic immunity • Simple control interface wi.
Manufacture

ABB

Datasheet
Download 5SHY35L4510 Datasheet




 5SHY35L4510
VDRM =
ITGQM =
ITSM =
V(T0) =
rT =
VDC-link =
4500 V
4000 A
32×103 A
1.4 V
0.325 m
2800 V
Asymmetric Integrated Gate-
Commutated Thyristor
5SHY 35L4510
High snubberless turn-off rating
Optimized for medium frequency (<1 kHz) and
wide temperature range
www.DataSheet4U.com
High reliability
High electromagnetic immunity
Simple control interface with status feedback
AC or DC supply voltage
Contact factory for series connection
Doc. No. 5SYA1232-02 June 07
Blocking
Maximum rated values 1)
Parameter
Rep. peak off-state voltage
Permanent DC voltage for
100 FIT failure rate of GCT
Symbol
VDRM
VDC-link
Conditions
Gate Unit energized
Ambient cosmic radiation at sea level
in open air. Gate Unit energized
min
Reverse voltage
Characteristic values
Parameter
Rep. peak off-state current
VRRM
Symbol
IDRM
IGCT in
off-state
on-state
Conditions
VD = VDRM, Gate Unit energized
min
Mechanical data (see Fig. 11, 12)
Maximum rated values 1)
Parameter
Symbol Conditions
Mounting force
Characteristic values
Parameter
Fm
Symbol Conditions
Pole-piece diameter
Dp ± 0.1 mm
Housing thickness
H
min
36
min
25.3
Weight
m
Surface creepage distance
Air strike distance
Length
Ds
Da
l
Anode to Gate
Anode to Gate
± 1.0 mm
33
10
Height
h ± 1.0 mm
Width IGCT
w ± 1.0 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
typ
typ
typ
40
typ
85
439
40
173
max
4500
2800
Unit
V
V
17 V
10 V
max
50
Unit
mA
max
44
Unit
kN
max
25.8
2.9
Unit
mm
mm
kg
mm
mm
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.




 5SHY35L4510
GCT Data
On-state (see Fig. 3, 4, 5, 6, 14, 15)
Maximum rated values 1)
Parameter
Symbol Conditions
Max. average on-state
current
IT(AV)M
Half sine wave, TC = 85 °C,
Double side cooled
Max. RMS on-state current IT(RMS)
Max. peak non-repetitive
surge on-state current
Limiting load integral
ITSM
I2t
tp = 10 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
Max. peak non-repetitive
surge on-state current
Limiting load integral
www.DataSheeSt4tUra.cyominductance between
GCT and antiparallel diode
ITSM
I2t
LD
tp = 30 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
Only relevant for applications with
antiparallel diode to the IGCT
Critical rate of rise of on-
state current
Characteristic values
Parameter
diT/dtcr
For higher diT/dt and current lower
than 100 A an external retrigger puls
is required.
Symbol Conditions
On-state voltage
Threshold voltage
Slope resistance
VT
V(T0)
rT
IT = 4000 A, Tj = 125 °C
Tj = 125 °C
IT = 1000...4000 A
Turn-on switching (see Fig. 14, 15)
Maximum rated values 1)
Parameter
Symbol Conditions
Critical rate of rise of on-
state current
Characteristic values
Parameter
diT/dtcr f = 0..500 Hz, Tj = 125 °C,
VD = 2800 V, ITM 4000 A
Symbol Conditions
Turn-on delay time
Turn-on delay time status
feedback
Rise time
Turn-on energy per pulse
tdon
tdon SF
tr
Eon
VD = 2800 V, Tj = 125 °C
IT = 4000 A, di/dt = VD / Li
Li = 5 µH
CCL = 10 µF, LCL = 0.3 µH
Turn-off switching (see Fig. 7, 8, 10, 14, 15)
Maximum rated values 1)
Parameter
Symbol Conditions
Max. controllable turn-off
current
Characteristic values
Parameter
ITGQM
VDM VDRM, Tj = 125°C,
VD = 2800 V, RS = 0.65 ,
CCL = 10 µF, LCL 0.3 µH
Symbol Conditions
Turn-off delay time
Turn-off delay time status
feedback
Turn-off energy per pulse
tdoff
tdoff SF
Eoff
VD = 2800 V, Tj = 125 °C
VDM VDRM, RS = 0.65
ITGQ = 4000 A, Li = 5 µH
CCL = 10 µF, LCL = 0.3 µH
min
min
min
min
min
min
5SHY 35L4510
typ max Unit
1700 A
2670
32×103
A
A
5.12×106 A2s
21×103 A
6.62×106 A2s
300 nH
200 A/µs
typ max Unit
2.35 2.7 V
1.4 V
0.325 m
typ max Unit
1000 A/µs
typ max Unit
3.5 µs
7 µs
1 µs
1.5 J
typ max Unit
4000 A
typ max Unit
7 µs
7 µs
19.5
22 J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1232-02 June 07
page 2 of 9




 5SHY35L4510
Gate Unit Data
Power supply (see Fig. 2, 9, 10, 12, 13)
Maximum rated values 1)
Parameter
Symbol Conditions
Gate Unit voltage
(Connector X1)
VGIN,RMS AC square wave amplitude (15 kHz
- 100kHz) or DC voltage. No
galvanic isolation to power circuit.
min
28
typ
Min. current needed to power IGIN Min Rectified average current
up the Gate Unit
see application note 5SYA 2031
2.1
Gate Unit power consumption PGIN Max
Characteristic values
Parameter
Symbol Conditions
min typ
Internal current limitation
IGIN Max Rectified average current limited by
the Gate Unit
www.DataSheeOt4Up.ctoimcal control input/output 2)
Maximum rated values 1)
Parameter
Symbol Conditions
min typ
Min. on-time
ton
40
Min. off-time
Characteristic values
Parameter
toff
Symbol Conditions
40
min typ
Optical input power
Optical noise power
Optical output power
Optical noise power
Pon CS
Poff CS
Pon SF
Poff SF
CS: Command signal
SF: Status feedback
Valid for 1mm plastic optical fiber
(POF)
-15
-19
Pulse width threshold
tGLITCH Max. pulse width without response
External retrigger pulse width tretrig
600
2) Do not disconnect or connect fiber optic cables while light is on.
Connectors 2) (see Fig. 11, 12, 13)
Parameter
Gate Unit power connector
Symbol Description
X1 AMP: MTA-156, Part Number 641210-5 3)
LWL receiver for command signal
CS Agilent, Type HFBR-2528 4)
LWL transmitter for status feedback SF Agilent, Type HFBR-1528 4)
2) Do not disconnect or connect fiber optic cables while light is on.
3) AMP, www.amp.com
4) Agilent Technologies, www.semiconductor.agilent.com
5SHY 35L4510
max
40
Unit
V
A
100 W
max
8
Unit
A
max
Unit
µs
µs
max
-1
-45
-1
-50
400
1100
Unit
dBm
dBm
dBm
dBm
ns
ns
Visual feedback (see Fig. 13)
Parameter
Symbol Description
Gate OFF
LED1 "Light" when GCT is off
Gate ON
LED2 "Light" when gate-current is flowing
Fault
LED3 "Light" when not ready / Failure
Power supply voltage OK LED4 "Light" when power supply is within specified range
Color
(green)
(yellow)
(red)
(green)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1232-02 June 07
page 3 of 9




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