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Commutated Thyristor. 5SHY55L4500 Datasheet

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Commutated Thyristor. 5SHY55L4500 Datasheet
















5SHY55L4500 Thyristor. Datasheet pdf. Equivalent













Part

5SHY55L4500

Description

Asymmetric Integrated Gate- Commutated Thyristor



Feature


VDRM ITGQM ITSM V(T0) rT VDC-link = = = = = = 4500 5500 33×103 1.3 0.26 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 55L4500 PRELIMINARY Doc. No. 5SYA1243-01 Aug 0 7 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) • High www.DataSheet4U.com elec tromagnetic immunity • Simple control interface with status feedba.
Manufacture

ABB

Datasheet
Download 5SHY55L4500 Datasheet


ABB 5SHY55L4500

5SHY55L4500; ck • AC or DC supply voltage • Optio n for series connection (contact factor y) Blocking Maximum rated values 1) Parameter Symbol Conditions Rep. peak o ff-state voltage VDRM Gate Unit energiz ed, Note 1 Permanent DC voltage for VDC -link 100 FIT failure rate of GCT Rever se voltage Characteristic values min typ max 4500 2800 17 Unit V V V Unit mA Ambient cosmic rad.


ABB 5SHY55L4500

iation at sea level in open air. Gate Un it energized VRRM min typ Parameter S ymbol Conditions Rep. peak off-state cu rrent IDRM VD = VDRM, Gate Unit energiz ed max 50 Mechanical data (see Fig. 1 1, 12) 1) Maximum rated values Paramet er Mounting force Characteristic values Symbol Conditions Fm Symbol Condition s Dp ± 0.1 mm H m Ds Da l h Anode to G ate Anode to Gate ±.


ABB 5SHY55L4500

1.0 mm ± 1.0 mm min 36 min 25.3 33 10 typ 40 typ 85 max 44 max 25.8 2.9 U nit kN Unit mm mm kg mm mm Parameter P ole-piece diameter Housing thickness We ight Surface creepage distance Air stri ke distance Length Height 439 40 173 mm mm mm Width IGCT w ± 1.0 mm 1) Max imum rated values indicate limits beyon d which damage to the device may occur ABB Switzerland Ltd.




Part

5SHY55L4500

Description

Asymmetric Integrated Gate- Commutated Thyristor



Feature


VDRM ITGQM ITSM V(T0) rT VDC-link = = = = = = 4500 5500 33×103 1.3 0.26 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 55L4500 PRELIMINARY Doc. No. 5SYA1243-01 Aug 0 7 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) • High www.DataSheet4U.com elec tromagnetic immunity • Simple control interface with status feedba.
Manufacture

ABB

Datasheet
Download 5SHY55L4500 Datasheet




 5SHY55L4500
VDRM =
ITGQM =
ITSM =
V(T0) =
rT =
VDC-link =
4500 V
5500 A
33×103 A
1.3 V
0.26 m
2800 V
Asymmetric Integrated Gate-
Commutated Thyristor
5SHY 55L4500
PRELIMINARY
High snubberless turn-off rating
Optimized for medium frequency (<1 kHz)
www.DataSheet4UH.coimgh electromagnetic immunity
Simple control interface with status feedback
AC or DC supply voltage
Option for series connection (contact factory)
Doc. No. 5SYA1243-01 Aug 07
Blocking
Maximum rated values 1)
Parameter
Rep. peak off-state voltage
Symbol
VDRM
Conditions
Gate Unit energized, Note 1
Permanent DC voltage for VDC-link Ambient cosmic radiation at sea level
100 FIT failure rate of GCT
in open air. Gate Unit energized
Reverse voltage
Characteristic values
Parameter
VRRM
Symbol Conditions
Rep. peak off-state current IDRM
VD = VDRM, Gate Unit energized
min
min
typ
typ
Mechanical data (see Fig. 11, 12)
Maximum rated values 1)
Parameter
Symbol Conditions
min
Mounting force
Characteristic values
Parameter
Fm
Symbol Conditions
36
min
Pole-piece diameter
Dp ± 0.1 mm
Housing thickness
H
25.3
Weight
m
Surface creepage distance Ds
Anode to Gate
33
Air strike distance
Da Anode to Gate
10
Length
l ± 1.0 mm
Height
h ± 1.0 mm
Width IGCT
w ± 1.0 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
typ
40
typ
85
439
40
173
max
4500
2800
Unit
V
V
17 V
max
50
Unit
mA
max
44
Unit
kN
max
25.8
2.9
Unit
mm
mm
kg
mm
mm
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.




 5SHY55L4500
GCT Data
On-state (see Fig. 3, 4, 5, 6, 14, 15)
Maximum rated values 1)
Parameter
Symbol Conditions
Max. average on-state
current
IT(AV)M
Half sine wave, TC = 85 °C,
Double side cooled
Max. RMS on-state current
Max. peak non-repetitive
surge on-state current
Limiting load integral
IT(RMS)
ITSM
I2t
tp = 3 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
Max. peak non-repetitive
surge on-state current
Limiting load integral
www.DataSheeMt4Ua.xc.ompeak non-repetitive
surge on-state current
Limiting load integral
ITSM
I2t
ITSM
I2t
tp = 10 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
tp = 30 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
Stray inductance between LD
GCT and antiparallel diode
Only relevant for applications with
antiparallel diode to the IGCT
Critical rate of rise of on-
state current
Characteristic values
Parameter
On-state voltage
Threshold voltage
Slope resistance
diT/dtcr
For higher diT/dt and current lower
than 100 A an external retrigger puls
is required.
Symbol Conditions
VT IT = 4000 A, Tj = 125 °C
V(T0)
rT
Tj = 125 °C
IT = 1000...6000 A
Turn-on switching
Maximum rated values 1)
Parameter
Critical rate of rise of on-
state current
Characteristic values
Parameter
Turn-on delay time
Turn-on delay time status
feedback
Rise time
Turn-on energy per pulse
(see Fig. 14, 15)
Symbol Conditions
diT/dtcr f = 0..500 Hz,Tj = 125 °C,IT = 5000 A
VD = 2800 V, ITM 7000 A
Symbol Conditions
tdon
tdon SF
tr
VD = 2800 V, Tj = 125 °C
IT = 4000 A, di/dt = VD / Li
Li = 3 µH
CCL = 20 µF, LCL = 0.3 µH
Eon
Turn-off switching (see Fig. 7, 8, 10, 14, 15)
Maximum rated values 1)
Parameter
Symbol Conditions
Max. controllable turn-off
current
Max. controllable turn-off
current
Characteristic values
Parameter
Turn-off delay time
Turn-off delay time status
feedback
Turn-off energy per pulse
ITGQM1
ITGQM2
VDM VDRM,
Tj = 125°C,
RS = 0.35 ,
CCL = 20 µF,DRMLCL
0.3 µH
VD = 2800 V
ton > 100µs
VD = 2800 V
40µs < ton < 100µs
Symbol Conditions
tdoff
tdoff SF
Eoff
VD = 2800 V, Tj = 125 °C
VDM VDRM, RS = 0.35
ITGQ = 4000 A, Li = 3 µH
CCL = 20 µF, LCL = 0.3 µH
min
min
min
min
min
min
5SHY 55L4500
typ max Unit
1880 A
2950
50×103
A
A
3.75×106 A2s
33×103 A
54.5×106 A2s
22×103 A
7.26×106 A2s
300 nH
200 A/µs
typ
2.15
1.25
0.23
max
2.35
1.3
0.26
Unit
V
V
m
typ max Unit
1000 A/µs
typ max Unit
4 µs
7 µs
1 µs
1.8 J
typ max Unit
5500 A
5000 A
typ max Unit
7 µs
7 µs
26 tbd J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1243-01 Aug 07
page 2 of 9




 5SHY55L4500
Gate Unit Data
Power supply (see Fig. 2, 9, 10, 12, 13)
Maximum rated values 1)
Parameter
Symbol Conditions
Gate Unit voltage
(Connector X1)
VGIN,RMS AC square wave amplitude (15 kHz
- 100kHz) or DC voltage. No
galvanic isolation to power circuit.
min
28
typ
Min. current needed to power IGIN Min Rectified average current
up the Gate Unit
see application note 5SYA 2031
2
Gate Unit power consumption PGIN Max
Characteristic values
Parameter
Symbol Conditions
min typ
Internal current limitation
IGIN Max Rectified average current limited by
the Gate Unit
www.DataSheeOt4Up.ctoimcal control input/output 2)
Maximum rated values 1)
Parameter
Symbol Conditions
min typ
Min. on-time
ton
40
Min. off-time
Characteristic values
Parameter
toff
Symbol Conditions
40
min typ
Optical input power
Optical noise power
Optical output power
Optical noise power
Pon CS
Poff CS
Pon SF
Poff SF
CS: Command signal
SF: Status feedback
Valid for 1mm plastic optical fiber
(POF)
-15
-19
Pulse width threshold
tGLITCH Max. pulse width without response
External retrigger pulse width tretrig
600
2) Do not disconnect or connect fiber optic cables while light is on.
Connectors 2) (see Fig. 11, 12, 13)
Parameter
Gate Unit power connector
Symbol Description
X1 AMP: MTA-156, Part Number 641210-5 3)
LWL receiver for command signal
CS Avago, Type HFBR-2528 4)
LWL transmitter for status feedback SF Avago, Type HFBR-1528 4)
2) Do not disconnect or connect fiber optic cables while light is on.
3) AMP, www.amp.com
4) Avago Technologies, www.avagotech.com
5SHY 55L4500
max
40
Unit
V
A
130 W
max
8
Unit
A
max
Unit
µs
µs
max
-1
-45
-1
-50
400
1100
Unit
dBm
dBm
dBm
dBm
ns
ns
Visual feedback (see Fig. 13)
Parameter
Symbol Description
Gate OFF
LED1 "Light" when GCT is off
Gate ON
LED2 "Light" when gate-current is flowing
Fault
LED3 "Light" when not ready / Failure
Power supply voltage OK LED4 "Light" when power supply is within specified range
Color
(green)
(yellow)
(red)
(green)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1243-01 Aug 07
page 3 of 9




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