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V FREDFET. APT4012SVFR Datasheet

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V FREDFET. APT4012SVFR Datasheet
















APT4012SVFR FREDFET. Datasheet pdf. Equivalent













Part

APT4012SVFR

Description

POWER MOS V FREDFET



Feature


APT4012BVFR APT4012SVFR 400V 37A BVFR 0 .120Ω D3PAK POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generat ion of high voltage N-Channel enhanceme nt mode power MOSFETs. This new technol ogy minimizes the JFET effect, increase s packing density and reduces the on-re sistance. Power MOS V® also achieves f aster switching speeds through optimize d gate layout. www.Data.
Manufacture

Advanced Power Technology

Datasheet
Download APT4012SVFR Datasheet


Advanced Power Technology APT4012SVFR

APT4012SVFR; Sheet4U.com SVFR • Faster Switching • Lower Leakage • Avalanche Energy Rated • TO-247 or Surface Mount D3Pa k G D • Fast Recovery Body Diode MA XIMUM RATINGS Symbol VDSS ID IDM VGS VG SM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain C urrent @ TC = 25°C Pulsed Drain Curren t 1 S All Ratings: TC = 25°C unless otherwise specified. APT4012BV.


Advanced Power Technology APT4012SVFR

FR_SVFR UNIT Volts Amps 400 37 148 ±30 ±40 370 2.96 -55 to 150 300 37 30 4 Gate-Source Voltage Continuous Gate-Sou rce Voltage Transient Total Power Dissi pation @ TC = 25°C Linear Derating Fac tor Operating and Storage Junction Temp erature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Rep etitive and Non-Repetit.


Advanced Power Technology APT4012SVFR

ive) 1 Repetitive Avalanche Energy Sin gle Pulse Avalanche Energy 1300 STATI C ELECTRICAL CHARACTERISTICS Symbol BVD SS ID(on) RDS(on) IDSS IGSS VGS(th) Cha racteristic / Test Conditions Drain-Sou rce Breakdown Voltage (VGS = 0V, ID = 2 50µA) On State Drain Current 2 MIN T YP MAX UNIT Volts Amps 400 37 0.12 2 50 1000 2 4 ±100 (VDS > ID(on) x R DS (on) Max, VGS = 10V).





Part

APT4012SVFR

Description

POWER MOS V FREDFET



Feature


APT4012BVFR APT4012SVFR 400V 37A BVFR 0 .120Ω D3PAK POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generat ion of high voltage N-Channel enhanceme nt mode power MOSFETs. This new technol ogy minimizes the JFET effect, increase s packing density and reduces the on-re sistance. Power MOS V® also achieves f aster switching speeds through optimize d gate layout. www.Data.
Manufacture

Advanced Power Technology

Datasheet
Download APT4012SVFR Datasheet




 APT4012SVFR
APT4012BVFR
APT4012SVFR
400V 37A 0.120
POWER MOS V® FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
BVFR
TO-247
D3PAK
SVFR
www.DataSheet4FUa.csomter Switching
• Avalanche Energy Rated
D
• Lower Leakage
• Fast Recovery Body Diode
MAXIMUM RATINGS
• TO-247 or Surface Mount D3Pak
G
S
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
APT4012BVFR_SVFR
400
37
148
±30
±40
370
2.96
-55 to 150
300
37
30
1300
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
400
37
2
0.12
250
1000
±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Amps
Ohms
µA
nA
Volts




 APT4012SVFR
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge 3
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller") Charge
td(on) Turn-on Delay Time
t r Rise Time
td(off) Turn-off Delay Time
t f Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 200V
ID = 37A @ 25°C
VGS = 15V
VDD = 200V
ID = 37A @ 25°C
RG = 1.6
www.DataSheeSt4OU.UcoRmCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/dt
trr
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -37A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -37A, di/dt = 100A/µs)
Reverse Recovery Charge
Qrr (IS = -37A, di/dt = 100A/µs)
IRRM
Peak Recovery Current
(IS = -37A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
APT4012BVFR_SVFR
MIN TYP MAX UNIT
4500
690 pF
290
195
25 nC
90
14
17
ns
55
12
MIN TYP MAX UNIT
37
Amps
148
1.3 Volts
15 V/ns
250
ns
525
1.6
µC
6.0
13
Amps
21
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.34
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.90mH, RG = 25, Peak IL = 37A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS -ID[Cont.] di/dt 700A/µs VR VDSS TJ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.4
D=0.5
0.1 0.2
0.05 0.1
0.05
0.01
0.005
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION




 APT4012SVFR
Typical Performance Curves
100
VGS=10V & 15V
80
60
7V
6.5V
6V
40 5.5V
5V
20
4.5V
0
0 40 80 120 160 200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
100
www.DataSheet4U.com
TJ = -55°C
TJ = +25°C
80
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
60 250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
40
20
TJ = +125°C
TJ = -55°C
TJ = +25°C
0
02 4 6 8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
40
30
20
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
ID = 0.5 ID [Cont.]
VGS = 10V
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
APT4012BVFR_SVFR
100
VGS=15V
7V
VGS=10V
80
6.5V
60 6V
40 5.5V
5V
20
4.5V
0
0 4 8 12 16 20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
1.5
NORMALIZED TO
VGS = 10V @ 0.5 ID [Cont.]
1.4
1.3
1.2
VGS=10V
1.1
VGS=20V
1.0
0.9
0 20 40 60 80 100
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE




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