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Power MOSFET. APT4014SVFR Datasheet

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Power MOSFET. APT4014SVFR Datasheet
















APT4014SVFR MOSFET. Datasheet pdf. Equivalent













Part

APT4014SVFR

Description

Power MOSFET



Feature


APT4014BVFR APT4014SVFR 400V 28A 0.140 POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-C hannel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and r educes the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. BVFR TO -247 D3PAK SVFR • Fas.
Manufacture

Advanced Power Technology

Datasheet
Download APT4014SVFR Datasheet


Advanced Power Technology APT4014SVFR

APT4014SVFR; ter Switching • Avalanche Energy Rate d D • Lower Leakage • Fast Recove ry Body Diode MAXIMUM RATINGS • TO-2 47 or Surface Mount D3Pak G S All Ratin gs: TC = 25°C unless otherwise specifi ed. Symbol VDSS ID IDM VGS VGSM PD TJ, TSTG TL IAR EAR EAS Parameter Drain-So urce Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate -Source Voltage Continuous G.


Advanced Power Technology APT4014SVFR

ate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derati ng Factor Operating and Storage Junctio n Temperature Range Lead Temperature: 0 .063" from Case for 10 Sec. Avalanche C urrent 1 (Repetitive and Non-Repetitive ) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT4014BVFR_S VFR 400 28 112 ±30 ±40 300 2.4 -55 to 150 300 28 30 1300 .


Advanced Power Technology APT4014SVFR

UNIT Volts Amps Volts Watts W/°C °C Am ps mJ STATIC ELECTRICAL CHARACTERISTIC S Symbol Characteristic / Test Conditi ons MIN TYP MAX BVDSS Drain-Source Br eakdown Voltage (VGS = 0V, ID = 250µA) 400 ID(on) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) 28 RDS(on) Drain-Source On-State Res istance 2 (VGS = 10V, 0.5 ID[Cont.]) I DSS Zero Gate Voltag.





Part

APT4014SVFR

Description

Power MOSFET



Feature


APT4014BVFR APT4014SVFR 400V 28A 0.140 POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-C hannel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and r educes the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. BVFR TO -247 D3PAK SVFR • Fas.
Manufacture

Advanced Power Technology

Datasheet
Download APT4014SVFR Datasheet




 APT4014SVFR
APT4014BVFR
APT4014SVFR
400V 28A 0.140
POWER MOS V® FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
BVFR
TO-247
D3PAK
SVFR
• Faster Switching
• Avalanche Energy Rated
D
• Lower Leakage
• Fast Recovery Body Diode
MAXIMUM RATINGS
• TO-247 or Surface Mount D3Pak
G
S
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
APT4014BVFR_SVFR
400
28
112
±30
±40
300
2.4
-55 to 150
300
28
30
1300
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
400
ID(on) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
28
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
IDSS
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
2
0.14
25
250
±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Amps
Ohms
µA
nA
Volts




 APT4014SVFR
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg
Total Gate Charge 3
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller ") Charge
t d(on)
tr
Turn-on Delay Time
Rise Time
td(off) Turn-off Delay Time
tf
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 200V
ID = 28A @ 25°C
VGS = 15V
VDD = 200V
ID = 28A @ 25°C
RG = 1.6
APT4014BVFR_SVFR
MIN TYP MAX UNIT
3600
560
pF
230
160
20
nC
70
12
10
ns
47
8
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/dt
trr
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -28A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -28A, di/dt = 100A/µs)
Reverse Recovery Charge
Qrr
(IS = -28A, di/dt = 100A/µs)
IRRM
Peak Recovery Current
(IS = -28A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN TYP MAX UNIT
28
Amps
112
1.3 Volts
15 V/ns
250
ns
500
1.3
µC
4.5
12
Amps
18
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.42
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 3.32mH, RG = 25, Peak IL = 28A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS -ID[Cont.] di/dt 700A/µs VR VDSS TJ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
D=0.5
0.1
0.2
0.05
0.1
0.05
0.01
0.005
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION




 APT4014SVFR
Typical Performance Curves
50
VGS=6V, 7V, 10V & 15V
5.5V
40
30
5V
20
4.5V
10
4V
0
0
40
80
120 160 200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
50
TJ = -55°C
TJ = +125°C
40
VDS> ID (ON) x RDS (ON)MAX.
30
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
20
10
TJ = +125°C
TJ = -55°C
TJ = +25°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
30
25
20
15
10
5
0
25
50
75
100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
ID = 0.5 ID [Cont.]
VGS = 10V
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
APT4014BVFR_SVFR
50
VGS=15V
6V
5.5V
VGS=10V
40
VGS=7V
30
5V
20
4.5V
10
4V
0
0
2
4
6
8
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
1.25
1.20
NORMALIZED TO
VGS = 10V @ 0.5 ID [Cont.]
1.15
1.10
1.05
VGS=10V
1.00
VGS=20V
0.95
0.90
0
10
20
30
40
50
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE




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