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N-Channel MOSFET. 10N60B Datasheet

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N-Channel MOSFET. 10N60B Datasheet
















10N60B MOSFET. Datasheet pdf. Equivalent













Part

10N60B

Description

600V N-Channel MOSFET



Feature


SSH10N60B November 2001 SSH10N60B 600V N-Channel MOSFET General Description T hese N-Channel enhancement mode power f ield effect transistors are produced us ing Fairchild’s proprietary, www.Data Sheet4U.com planar, DMOS technology. Th is advanced technology has been especia lly tailored to minimize on-state resis tance, provide superior switching perfo rmance, and withstan.
Manufacture

Fairchild Semiconductor

Datasheet
Download 10N60B Datasheet


Fairchild Semiconductor 10N60B

10N60B; d high energy pulse in the avalanche and commutation mode. These devices are we ll suited for high efficiency switch mo de power supplies. Features • • • • • 10A, 600V, RDS(on) = 0.8 @VGS = 10 V Low gate charge ( typica l 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improv ed dv/dt capability D ! ● ◀ ▲ ● ● G! TO-3P G DS SSH Series ! S .


Fairchild Semiconductor 10N60B

Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Contin uous (TC = 25°C) Drain Current - Conti nuous (TC = 100°C) Drain Current - Pul sed (Note 1) SSH10N60B 600 10 6.3 40 30 (Note 2) (Note 1) (Note 1) (Note 3 ) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Vol.


Fairchild Semiconductor 10N60B

tage Single Pulsed Avalanche Energy Aval anche Current Repetitive Avalanche Ener gy Peak Diode Recovery dv/dt Power Diss ipation (TC = 25°C) 520 10 19.3 5.5 1 93 1.54 -55 to +150 300 - Derate above 25°C Operating and Storage Temperatur e Range Maximum lead temperature for so ldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθCS RθJA Para.





Part

10N60B

Description

600V N-Channel MOSFET



Feature


SSH10N60B November 2001 SSH10N60B 600V N-Channel MOSFET General Description T hese N-Channel enhancement mode power f ield effect transistors are produced us ing Fairchild’s proprietary, www.Data Sheet4U.com planar, DMOS technology. Th is advanced technology has been especia lly tailored to minimize on-state resis tance, provide superior switching perfo rmance, and withstan.
Manufacture

Fairchild Semiconductor

Datasheet
Download 10N60B Datasheet




 10N60B
November 2001
SSH10N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
www.DataSheet4U.com planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 10A, 600V, RDS(on) = 0.8@VGS = 10 V
• Low gate charge ( typical 54 nC)
• Low Crss ( typical 32 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G DS
TO-3P
SSH Series
G!
D
!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
SSH10N60B
600
10
6.3
40
± 30
520
10
19.3
5.5
193
1.54
-55 to +150
300
Typ
--
0.24
--
Max
0.65
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001




 10N60B
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
600 --
ID = 250 µA, Referenced to 25°C -- 0.65
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
-- --
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
www.DataSheet4U.com
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
VGS = 10 V, ID = 5.0 A
-- 0.65
VDS = 40 V, ID = 5.0 A (Note 4) --
11
4.0
0.8
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 2100 2700
-- 175 230
-- 32
42
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 300 V, ID = 10 A,
RG = 25
-- 35
80
-- 100 210
-- 185 380
(Note 4, 5)
--
115
240
VDS = 480 V, ID = 10 A,
VGS = 10 V
(Note 4, 5)
--
--
--
54
9.3
21
70
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 10
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 40
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10 A
-- -- 1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 10 A,
dIF / dt = 100 A/µs
-- 470
(Note 4) -- 6.25
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 9.5mH, IAS = 10A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 10A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001




 10N60B
Typical Characteristics
www.DataSheet4U.com
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
101 6.5 V
6.0 V
5.5 V
Bottom: 5.0 V
100
10-1
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
2.5
2.0
V = 10V
GS
1.5 VGS = 20V
1.0
0.5
Note : TJ = 25
0.0
0
5 10 15 20 25 30
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
4000
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C
iss
2000
1000
Coss
Notes :
C
rss
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
101
150oC
100
25oC
10-1
2
-55oC
Notes :
1. V = 40V
2. 25DS0μ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1.
2.
V25G0Sμ=
0V
s Pulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V = 120V
DS
V = 300V
DS
8 V = 480V
DS
6
4
2
Note : I = 10 A
D
0
0 10 20 30 40 50 60
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev. B, November 2001




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