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Planar Transistor. 2SC4081W Datasheet

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Planar Transistor. 2SC4081W Datasheet
















2SC4081W Transistor. Datasheet pdf. Equivalent













Part

2SC4081W

Description

Silicon Epitaxial Planar Transistor



Feature


BL Galaxy Electrical Silicon Epitaxial P lanar Transistor FEATURES z z Excellent hFE linearity. Complements the 2A1576A Production specification 2SC4081W Pb Lead-free www.DataSheet4U.com APPLI CATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATI ON Type No. 2SC4081W Marking BQ/BR/BS Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless othe.
Manufacture

Galaxy Semi-Conductor Holdings Limited

Datasheet
Download 2SC4081W Datasheet


Galaxy Semi-Conductor Holdings Limited 2SC4081W

2SC4081W; rwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Vo ltage Collector-Emitter Voltage Emitter -Base Voltage Collector Current -Contin uous Collector Dissipation Junction and Storage Temperature Value 60 50 6 150 200 -55~150 Units V V V mA mW ℃ ELEC TRICAL CHARACTERISTICS @ Ta=25℃ unles s otherwise specified Document number: BL/SSSTF002 Rev.A ww.


Galaxy Semi-Conductor Holdings Limited 2SC4081W

w.galaxycn.com 1 BL Galaxy Electrical S ilicon Epitaxial Planar Transistor Para meter Collector-base breakdown voltage Collector-emitter breakdown voltage www .DataSheet4U.com Production specificat ion 2SC4081W MIN TYP MAX UNIT 60 50 6 0.1 0.1 120 560 0.4 180 3.5 V GHz pF V V V μA μA Symbol V(BR)CBO V(BR)CEO V (BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions IC=5.


Galaxy Semi-Conductor Holdings Limited 2SC4081W

0μA,IE=0 IC=1mA,IB=0 IE=50μA,IC=0 VCB= 60V,IE=0 VEB=6V,IC=0 VCE=6V,IC=1mA ICE= 50mA,IB=5mA VCE=12V, IC= 2mA,f=30MHz VC B=12V,IE=0,f=1MHz Emitter-base breakdo wn voltage Collector cut-off current Em itter cut-off current DC current gain C ollector-emitter saturation voltage Tra nsition frequency Collector output capa citance CLASSIFICATION Rank Range Mark ing OF hFE Q R 180.





Part

2SC4081W

Description

Silicon Epitaxial Planar Transistor



Feature


BL Galaxy Electrical Silicon Epitaxial P lanar Transistor FEATURES z z Excellent hFE linearity. Complements the 2A1576A Production specification 2SC4081W Pb Lead-free www.DataSheet4U.com APPLI CATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATI ON Type No. 2SC4081W Marking BQ/BR/BS Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless othe.
Manufacture

Galaxy Semi-Conductor Holdings Limited

Datasheet
Download 2SC4081W Datasheet




 2SC4081W
BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z Excellent hFE linearity.
z Complements the 2A1576A
Pb
Lead-free
Production specification
2SC4081W
www.DataSheet4UA.cPomPLICATIONS
z NPN Silicon Epitaxial Planar Transistor.
ORDERING INFORMATION
Type No.
Marking
2SC4081W
BQ/BR/BS
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
60
VCEO
Collector-Emitter Voltage
50
VEBO
Emitter-Base Voltage
6
IC Collector Current -Continuous
150
PC Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Document number: BL/SSSTF002
Rev.A
www.galaxycn.com
1




 2SC4081W
BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
Production specification
2SC4081W
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0
60 V
Collector-emitter breakdown voltage V(BR)CEO
www.DataSheet4U.com
Emitter-base breakdown voltage
V(BR)EBO
IC=1mA,IB=0
IE=50μA,IC=0
50 V
6V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1 μA
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
CLASSIFICATION OF hFE
Rank
Q
Range
120-270
Marking
BQ
VEB=6V,IC=0
0.1 μA
VCE=6V,IC=1mA
120 560
ICE=50mA,IB=5mA
VCE=12V, IC= 2mA,f=30MHz
VCB=12V,IE=0,f=1MHz
0.4
180
3.5
V
GHz
pF
R
180-390
BR
S
270-560
BS
Document number: BL/SSSTF002
Rev.A
www.galaxycn.com
2




 2SC4081W
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC4081W
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
www.DataSheet4U.com
Document number: BL/SSSTF002
Rev.A
www.galaxycn.com
3




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