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FQA13N80. 13N80 Datasheet

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FQA13N80. 13N80 Datasheet






13N80 FQA13N80. Datasheet pdf. Equivalent




13N80 FQA13N80. Datasheet pdf. Equivalent





Part

13N80

Description

FQA13N80



Feature


FQA13N80 800V N-Channel MOSFET Septembe r 2006 QFET FQA13N80 800V N-Channel MO SFET Features • 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V • Low gate char ge ( typical 68 nC) • Low Crss ( typi cal 30pF) www.DataSheet4U.com • Fast switching • 100% avalanche tested • Improved dv/dt capability ® Descrip tion These N-Channel enhancement mode p ower field effect transistors are.
Manufacture

Fairchild Semiconductor

Datasheet
Download 13N80 Datasheet


Fairchild Semiconductor 13N80

13N80; produced using Fairchild’s proprietar y, planar stripe, DMOS technology. This advanced technology has been especiall y tailored to minimize on-state resista nce, provide superior switching perform ance, and withstand high energy pulse i n the avalanche and commutation mode. T hese devices are well suited for high e fficient switched mode power supplies, active power factor .


Fairchild Semiconductor 13N80

correction, electronic lamp ballast base d on half bridge topology. D G TO-3P G DS FQA Series S Absolute Maximum R atings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source V oltage Drain Current Drain Current - Co ntinuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Parameter FQA13N80 800 12.6 8.0 50.4 ± 30 (Note 2) (Note 1) (Note 1).


Fairchild Semiconductor 13N80

(Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Si ngle Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Pea k Diode Recovery dv/dt Power Dissipatio n (TC = 25°C) - Derate above 25°C Ope rating and Storage Temperature Range Ma ximum lead temperature for soldering pu rposes, 1/8 from case for 5 seconds 11 00 12.6 30 4.0 300 2.38.

Part

13N80

Description

FQA13N80



Feature


FQA13N80 800V N-Channel MOSFET Septembe r 2006 QFET FQA13N80 800V N-Channel MO SFET Features • 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V • Low gate char ge ( typical 68 nC) • Low Crss ( typi cal 30pF) www.DataSheet4U.com • Fast switching • 100% avalanche tested • Improved dv/dt capability ® Descrip tion These N-Channel enhancement mode p ower field effect transistors are.
Manufacture

Fairchild Semiconductor

Datasheet
Download 13N80 Datasheet




 13N80
FQA13N80
800V N-Channel MOSFET
Features
• 12.6A, 800V, RDS(on) = 0.75@VGS = 10 V
• Low gate charge ( typical 68 nC)
www.DataSheet4U.cLoomw Crss ( typical 30pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
September 2006
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G DS
TO-3P
FQA Series
G
S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQA13N80
800
12.6
8.0
50.4
± 30
1100
12.6
30
4.0
300
2.38
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.42
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FQA13N80 Rev. A1
1
www.fairchildsemi.com




 13N80
Package Marking and Ordering Information
Device Marking
FQA13N80
FQA13N80
Device
FQA13N80
FQA13N80_F109
Package
TO-3P
TO-3PN
Reel Size
--
--
Tape Width
--
--
Quantity
30
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
www.DataSheet4U.cBoVmDSS/
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 6.3A
VDS = 50 V, ID = 6.3A
(Note 4)
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 400 V, ID = 12.6A,
RG = 25
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
(Note 4, 5)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 640 V, ID = 12.6A,
VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS =12.6A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 12.6 A,
dIF / dt = 100 A/µs
(Note 4)
800
--
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 13mH, IAS =12.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 12.6A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Typ
--
0.95
--
--
--
--
--
0.58
13
2700
275
30
60
150
155
110
68
15
32
--
--
--
850
11.3
Max Units
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
5.0 V
0.75
-- S
3500
360
39
pF
pF
pF
130 ns
310 ns
320 ns
230 ns
88 nC
-- nC
-- nC
12.6 A
50.4 A
1.4 V
-- ns
-- µC
2 www.fairchildsemi.com
FQA13N80 Rev. A1




 13N80
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top : 15.V0GVS
10.0 V
8.0 V
7.0 V
101
6.5 V
6.0 V
Bottom: 5.5 V
www.DataSheet4U.com
100
Notes :
1. 250µs Pulse Test
2. TC = 25
10-1
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 2. Transfer Characteristics
101
150oC
100 25oC
-55oC
Notes :
1.
2.
V25DS0µ=s50PVulse
Test
10-1
2468
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10
1.8
1.5
VGS = 10V
1.2
VGS = 20V
0.9
0.6
Note : TJ = 25
0.3
0
5 10 15 20 25 30 35 40 45
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
10-1
Ciss
CCCiorssssss===CCCggdsds++CCggdd(Cds = shorted)
Coss
Crss
Notes :
1.
2.
fV=GS1=M0HVz
100 101
VDS, Drain-Source Voltage [V]
101
100
10-1
0.2
150 25
Notes :
1.
2.
V25G0Sµ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 6. Gate Charge Characteristics
12
VDS = 160V
10 VDS = 400V
8 VDS = 640V
6
4
2
Note : ID = 12.6 A
0
0 10 20 30 40 50 60 70 80
QG, Total Gate Charge [nC]
3 www.fairchildsemi.com
FQA13N80 Rev. A1



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