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Plastic-Encapsulated Transistors. 2SA1162 Datasheet

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Plastic-Encapsulated Transistors. 2SA1162 Datasheet
















2SA1162 Transistors. Datasheet pdf. Equivalent













Part

2SA1162

Description

Plastic-Encapsulated Transistors



Feature


Transys Electronics L I M I T E D SOT-2 3-3L Plastic-Encapsulated Transistors S OT-23-3L 2SA1162 FEATURES Power dissip ation PCM TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 w.DataShee t4U.com : 150 mW (Tamb=25℃) 0. 025 0. 95¡ À 2. 80¡ À 0. 05 1. 60¡ 0. 05 Collector current : 150 mA ICM Collector-base voltage V V(BR)CBO : -50 Operating and storage jun.
Manufacture

TRANSYS Electronics Limited

Datasheet
Download 2SA1162 Datasheet


TRANSYS Electronics Limited 2SA1162

2SA1162; ction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base b reakdown voltage Collector-emitter brea kdown voltage Emitter-base breakdown vo ltage Collector cut-off current Emitter cut-off current DC current gain Collec tor-emitter saturation voltage Transiti on frequency Collector output capacitan ce Symbol V(BR)CBO V(BR).


TRANSYS Electronics Limited 2SA1162

CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) unless otherwise specified) Test condit ions MIN TYP MAX UNIT V V V Ic=-100µA , IE=0 Ic=-1mA, IB=0 IE=-100µA, IC=0 V CB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC =-2mA IC=-100mA, IB=-10mA VCE=-10V, IC= -1mA VCB=-10V, IE=0, f=1MHz VCE=-6V, Ic =0.1mA, f=1KHZ, Rg=10KΩ -50 -50 -5 - 0.1 -0.1 70 400 -0.3 80 7 0. 35 2. 92 ¡ À0. 05 1. 9 µA µA .


TRANSYS Electronics Limited 2SA1162

V MHz pF fT Cob Noise figure NF 10 dB CLASSIFICATION OF hFE(1) Rank Rang e Marking O 70-140 SO Y 120-240 SY GR 2 00-400 SG .





Part

2SA1162

Description

Plastic-Encapsulated Transistors



Feature


Transys Electronics L I M I T E D SOT-2 3-3L Plastic-Encapsulated Transistors S OT-23-3L 2SA1162 FEATURES Power dissip ation PCM TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 w.DataShee t4U.com : 150 mW (Tamb=25℃) 0. 025 0. 95¡ À 2. 80¡ À 0. 05 1. 60¡ 0. 05 Collector current : 150 mA ICM Collector-base voltage V V(BR)CBO : -50 Operating and storage jun.
Manufacture

TRANSYS Electronics Limited

Datasheet
Download 2SA1162 Datasheet




 2SA1162
Transys
Electronics
LIMITED
SOT-23-3L Plastic-Encapsulated Transistors
2SA1162 TRANSISTOR (PNP)
FEATURES
Power dissipation
w.DataSheet4U.com
PCM : 150 mW (Tamb=25)
Collector current
ICM : 150 mA
Collector-base voltage
V(BR)CBO : -50 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=-100µA, IE=0
Ic=-1mA, IB=0
IE=-100µA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-6V, IC=-2mA
IC=-100mA, IB=-10mA
VCE=-10V, IC=-1mA
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-50 V
-50 V
-5 V
-0.1 µA
-0.1 µA
70 400
-0.3 V
80 MHz
7 pF
Noise figure
NF VCE=-6V, Ic=0.1mA,
f=1KHZ, Rg=10K
10 dB
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
O
70-140
SO
Y
120-240
SY
GR
200-400
SG












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