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POWER MOSFET. AP4407GM Datasheet

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POWER MOSFET. AP4407GM Datasheet
















AP4407GM MOSFET. Datasheet pdf. Equivalent













Part

AP4407GM

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


AP4407GM Pb Free Plating Product Advanc ed Power Electronics Corp. ▼ Simple D rive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic www.D ataSheet4U.com D D D D P-CHANNEL ENHAN CEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G S S S -30V 14mΩ -10.7A SO-8 D escription The Advanced Power MOSFETs f rom APEC provide the designer with the best combination of fast .
Manufacture

Advanced Power Electronics

Datasheet
Download AP4407GM Datasheet


Advanced Power Electronics AP4407GM

AP4407GM; switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferr ed for all commercial-industrial surfac e mount applications and suited for low voltage applications such as DC/DC con verters. D G S Absolute Maximum Rati ngs Symbol VDS VGS ID@TA=25℃ ID@TA=70 ℃ IDM PD@TA=25℃ TSTG TJ Parameter D rain-Source Voltage Gate.


Advanced Power Electronics AP4407GM

-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 ± 25 -10.7 - 8.6 -50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Tota l Power Dissipation Linear Derating Fac tor Storage Temperature Range Operating Junction Temperature Range Thermal Da ta Symbol Rthj-a Parameter Thermal Resi stance Junction-ambient 3.


Advanced Power Electronics AP4407GM

Value Max. 50 Unit ℃/W Data and sp ecifications subject to change without notice 201125031 AP4407GM Electrical Characteristics@Tj=25oC(unless otherwis e specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) www.DataSheet4U.com Parameter Drain-Source Breakdown Voltage Test Co nditions Min. -30 -1 - Typ. -0.015 M ax. Units 14 20 -3 -1 -25 ±100 46 V V/ ℃ mΩ mΩ V S uA uA nA nC.





Part

AP4407GM

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


AP4407GM Pb Free Plating Product Advanc ed Power Electronics Corp. ▼ Simple D rive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic www.D ataSheet4U.com D D D D P-CHANNEL ENHAN CEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G S S S -30V 14mΩ -10.7A SO-8 D escription The Advanced Power MOSFETs f rom APEC provide the designer with the best combination of fast .
Manufacture

Advanced Power Electronics

Datasheet
Download AP4407GM Datasheet




 AP4407GM
Advanced Power
Electronics Corp.
AP4407GM
Pb Free Plating Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
www.DataSheet4U.com
Description
D
D
D
D
SO-8
G
SS
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
-30V
14mΩ
-10.7A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
-30
± 25
-10.7
-8.6
-50
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Value
50
Unit
/W
Data and specifications subject to change without notice
201125031




 AP4407GM
AP4407GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
www.DataSVheGeSt(4thU) .com
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-10A
VGS=-4.5V, ID=-5A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
VDS=-10V, ID=-10A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS= ± 25V
ID=-10.7A
Gate-Source Charge
VDS=-24V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=-4.5V
VDS=-15V
Rise Time
ID=-1A
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=-10V
RD=15Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=-25V
Reverse Transfer Capacitance
f=1.0MHz
-30 -
- -0.015
-
-
V
V/
- - 14 mΩ
- - 20 mΩ
-1 - -3 V
- 13 - S
- - -1 uA
- - -25 uA
- - ±100 nA
- 29 46 nC
- 6 - nC
- 14 - nC
- 15 - ns
- 12 - ns
- 100 - ns
- 70 - ns
- 2600 4100 pF
- 500 - pF
- 370 - pF
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-10.7A, VGS=0V
IS=-10.7A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 31 - ns
- 25 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on min. copper pad.




 AP4407GM
44
40 T A =25 o C
36
32
28
-10V
-5.0V
-4.5V
-4.0V
24
20
16
www.DataSheet4U.com 12
V G =-3.0V
8
4
0
012
-V DS , Drain-to-Source Voltage (V)
3
Fig 1. Typical Output Characteristics
16
I D =-10A
T A =25 o C
14
12
10
3579
-V GS , Gate-to-Source Voltage (V)
11
Fig 3. On-Resistance v.s. Gate Voltage
100.00
10.00
T j =150 o C
1.00
T j =25 o C
0.10
0.01
0.1
0.3 0.5 0.7 0.9 1.1 1.3
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
AP4407GM
40
36 T A =150 o C
32
28
-10V
-5.0V
-4.5V
-4.0V
24
20
16
12
V G =-3.0V
8
4
0
01122
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.80
I D =-10A
1.60
V GS = -10V
1.40
1.20
1.00
0.80
0.60
-50
0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
3
2
1
0
-50
0
50 100
T j , Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature




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